Datasheets
HL6501MG-A by: Ushio Opto Semiconductors Inc

Laser Diode, 658nm,

Part Details for HL6501MG-A by Ushio Opto Semiconductors Inc

Overview of HL6501MG-A by Ushio Opto Semiconductors Inc

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Applications Healthcare Electronic Manufacturing

Price & Stock for HL6501MG-A

Part # Distributor Description Stock Price Buy
DISTI # HL6501MG-A
Avnet Americas 658nm / 35mW AlGaInP Laser Diode - Trays (Alt: HL6501MG-A) RoHS: Compliant Min Qty: 1 Package Multiple: 1 Lead time: 12 Weeks, 6 Days Container: Tray 0
  • 1 $17.9812
  • 10 $17.6072
  • 30 $17.1469
  • 50 $16.3414
  • 100 $13.2294
  • 250 $12.8459
  • 500 $11.3295
$11.3295 / $17.9812 Buy Now

Part Details for HL6501MG-A

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HL6501MG-A Part Data Attributes

HL6501MG-A Ushio Opto Semiconductors Inc
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HL6501MG-A Ushio Opto Semiconductors Inc Laser Diode, 658nm,
Rohs Code Yes
Part Life Cycle Code Active
Ihs Manufacturer USHIO OPTO SEMICONDUCTORS INC
Reach Compliance Code compliant
Factory Lead Time 12 Weeks, 6 Days
Configuration SINGLE WITH BUILT-IN PHOTO DIODE
Number of Functions 1
Operating Temperature-Max 60 °C
Operating Temperature-Min -10 °C
Optoelectronic Device Type LASER DIODE
Output Power-Nom 35 mW
Peak Wavelength 658 nm
Shape ROUND
Size 1.6 mm
Threshold Current-Max 70 mA

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