There are no models available for this part yet.
Overview of HUF75307P3 by Rochester Electronics LLC
Note: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
- Distributor Offerings: ( 0 listings )
- Number of FFF Equivalents: ( 9 replacements )
- CAD Models: ( Request Part )
- Number of Functional Equivalents: ( 10 options )
- Part Data Attributes ( Available )
- Reference Designs: ( Not Available )
CAD Models for HUF75307P3 by Rochester Electronics LLC
Part Data Attributes for HUF75307P3 by Rochester Electronics LLC
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|---|---|
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Pbfree Code
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No
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Rohs Code
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No
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Part Life Cycle Code
|
Active
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Ihs Manufacturer
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ROCHESTER ELECTRONICS LLC
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Reach Compliance Code
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unknown
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Case Connection
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DRAIN
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Configuration
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SINGLE WITH BUILT-IN DIODE
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DS Breakdown Voltage-Min
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55 V
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Drain Current-Max (ID)
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15 A
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Drain-source On Resistance-Max
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0.09 Ω
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FET Technology
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METAL-OXIDE SEMICONDUCTOR
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JEDEC-95 Code
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TO-220AB
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JESD-30 Code
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R-PSFM-T3
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JESD-609 Code
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e0
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Number of Elements
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1
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Number of Terminals
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3
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Operating Mode
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ENHANCEMENT MODE
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Package Body Material
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PLASTIC/EPOXY
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Package Shape
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RECTANGULAR
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Package Style
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FLANGE MOUNT
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Peak Reflow Temperature (Cel)
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NOT SPECIFIED
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Polarity/Channel Type
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N-CHANNEL
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Qualification Status
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COMMERCIAL
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Surface Mount
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NO
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Terminal Finish
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TIN LEAD
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Terminal Form
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THROUGH-HOLE
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Terminal Position
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SINGLE
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Time@Peak Reflow Temperature-Max (s)
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NOT SPECIFIED
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Transistor Application
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SWITCHING
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Transistor Element Material
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SILICON
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Alternate Parts for HUF75307P3
This table gives cross-reference parts and alternative options found for HUF75307P3. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of HUF75307P3, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Description | Manufacturer | Compare |
|---|---|---|---|
| BUZ71S2 | Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET, | Infineon Technologies AG | HUF75307P3 vs BUZ71S2 |
| BUZ71 | Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET, | Infineon Technologies AG | HUF75307P3 vs BUZ71 |
| BUZ71 | 14A, 50V, 0.1ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220, TO-220, 3 PIN | Texas Instruments | HUF75307P3 vs BUZ71 |
| IRFZ24 | Power Field-Effect Transistor, 17A I(D), 60V, 0.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | International Rectifier | HUF75307P3 vs IRFZ24 |
| BTS114 | Power Field-Effect Transistor, 14A I(D), 50V, 0.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | Siemens | HUF75307P3 vs BTS114 |
| IRFZ24 | Power Field-Effect Transistor, 15A I(D), 60V, 0.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN | Samsung Semiconductor | HUF75307P3 vs IRFZ24 |
| IRFZ20 | Power Field-Effect Transistor, 15A I(D), 50V, 0.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN | Samsung Semiconductor | HUF75307P3 vs IRFZ20 |
| BUZ71 | 14A, 50V, 0.1ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB | Rochester Electronics LLC | HUF75307P3 vs BUZ71 |
| MTP15N06V | 15A, 60V, 0.12ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB | Motorola Mobility LLC | HUF75307P3 vs MTP15N06V |