Datasheets
HUF75321D3ST by:

20A, 55V, 0.036ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252AA, TO-252AA, 3 PIN

Part Details for HUF75321D3ST by Rochester Electronics LLC

Overview of HUF75321D3ST by Rochester Electronics LLC

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Part Details for HUF75321D3ST

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HUF75321D3ST Part Data Attributes:

HUF75321D3ST Rochester Electronics LLC
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HUF75321D3ST Rochester Electronics LLC 20A, 55V, 0.036ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252AA, TO-252AA, 3 PIN
Pbfree Code Yes
Rohs Code Yes
Part Life Cycle Code Active
Ihs Manufacturer ROCHESTER ELECTRONICS LLC
Part Package Code TO-252AA
Package Description TO-252AA, 3 PIN
Pin Count 4
Reach Compliance Code unknown
Case Connection DRAIN
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 55 V
Drain Current-Max (ID) 20 A
Drain-source On Resistance-Max 0.036 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code TO-252AA
JESD-30 Code R-PSSO-G2
JESD-609 Code e3
Moisture Sensitivity Level 1
Number of Elements 1
Number of Terminals 2
Operating Mode ENHANCEMENT MODE
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Peak Reflow Temperature (Cel) 260
Polarity/Channel Type N-CHANNEL
Qualification Status COMMERCIAL
Surface Mount YES
Terminal Finish MATTE TIN
Terminal Form GULL WING
Terminal Position SINGLE
Time@Peak Reflow Temperature-Max (s) 30
Transistor Application SWITCHING
Transistor Element Material SILICON

Alternate Parts for HUF75321D3ST

This table gives cross-reference parts and alternative options found for HUF75321D3ST. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of HUF75321D3ST, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
HUF75321D3S Power Field-Effect Transistor, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA Harris Semiconductor HUF75321D3ST vs HUF75321D3S
HUF75321D3ST N-Channel UltraFET Power MOSFET 55V, 20A, 36mΩ, 2500-REEL onsemi HUF75321D3ST vs HUF75321D3ST
HUF75321D3S Power Field-Effect Transistor, 20A I(D), 55V, 0.036ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, Fairchild Semiconductor Corporation HUF75321D3ST vs HUF75321D3S
HUF75321D3ST 20A, 55V, 0.036ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252AA Intersil Corporation HUF75321D3ST vs HUF75321D3ST
HUF75321D3S_NL Power Field-Effect Transistor, 20A I(D), 55V, 0.036ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, Fairchild Semiconductor Corporation HUF75321D3ST vs HUF75321D3S_NL
HUF75321D3S 20A, 55V, 0.036ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252AA Intersil Corporation HUF75321D3ST vs HUF75321D3S
STD30NE06 30A, 60V, 0.03ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252, TO-252, DPAK-3 STMicroelectronics HUF75321D3ST vs STD30NE06
HUF75321D3ST_NL Power Field-Effect Transistor, 20A I(D), 55V, 0.036ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, TO-252AA, 3 PIN Fairchild Semiconductor Corporation HUF75321D3ST vs HUF75321D3ST_NL
Part Number Description Manufacturer Compare
BUZ101SL Power Field-Effect Transistor, 21A I(D), 55V, 0.07ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220AB, 3 PIN Siemens HUF75321D3ST vs BUZ101SL
HUF76429D3ST 20A, 60V, 0.029ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252AA Intersil Corporation HUF75321D3ST vs HUF76429D3ST
934054570118 TRANSISTOR 19 A, 55 V, 0.075 ohm, N-CHANNEL, Si, POWER, MOSFET, D2PAK-3, FET General Purpose Power NXP Semiconductors HUF75321D3ST vs 934054570118
IRF9Z34STRLPBF Power Field-Effect Transistor, 18A I(D), 60V, 0.14ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, ROHS COMPLIANT, TO-263, D2PAK-3 Vishay Siliconix HUF75321D3ST vs IRF9Z34STRLPBF
IRFR1205TRPBF Power Field-Effect Transistor, 20A I(D), 55V, 0.027ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, LEAD FREE, PLASTIC, DPAK-3 International Rectifier HUF75321D3ST vs IRFR1205TRPBF
IRF9Z34NSPBF Power Field-Effect Transistor, 19A I(D), 55V, 0.1ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, LEAD FREE, PLASTIC, D2PAK-3 International Rectifier HUF75321D3ST vs IRF9Z34NSPBF
HUF75309D3ST 19A, 55V, 0.07ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252AA Rochester Electronics LLC HUF75321D3ST vs HUF75309D3ST
NTD18N06T4G 18A, 60V, 0.06ohm, N-CHANNEL, Si, POWER, MOSFET, LEAD FREE, CASE 369C-01, DPAK-3 Rochester Electronics LLC HUF75321D3ST vs NTD18N06T4G
HUFA75321D3ST 20A, 55V, 0.036ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252AA Intersil Corporation HUF75321D3ST vs HUFA75321D3ST
NTD18N06LG 18A, 60V, 0.065ohm, N-CHANNEL, Si, POWER, MOSFET, LEAD FREE, CASE 369C-01, DPAK-3 Rochester Electronics LLC HUF75321D3ST vs NTD18N06LG

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