Part Details for HUF75321D3ST by Fairchild Semiconductor Corporation
Overview of HUF75321D3ST by Fairchild Semiconductor Corporation
- Distributor Offerings: (6 listings)
- Number of FFF Equivalents: (6 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Price & Stock for HUF75321D3ST
| Part # | Distributor | Description | Stock | Price | Buy | |
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Bristol Electronics | 6638 |
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RFQ | ||
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Bristol Electronics | 933 |
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Bristol Electronics | 133 |
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Quest Components | 20 A, 55 V, 0.036 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252AA | 746 |
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$0.5096 / $1.2740 | Buy Now |
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Rochester Electronics | HUF75321D3 - Power Field-Effect Transistor, 20A, 55V, 0.036ohm, N-Channel, MOSFET, TO-252AA RoHS: Compliant Status: Active Min Qty: 1 | 5 |
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$0.3397 / $0.3996 | Buy Now |
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ComSIT USA | 55 V, 20 A, 36 MILLI OHM, N-CHANNEL ULTRAFET POWER MOSFET Power Field-Effect Transistor, 20A I(D), 55V, 0.036ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA RoHS: Compliant |
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RFQ |
Part Details for HUF75321D3ST
HUF75321D3ST CAD Models
HUF75321D3ST Part Data Attributes
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HUF75321D3ST
Fairchild Semiconductor Corporation
Buy Now
Datasheet
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Compare Parts:
HUF75321D3ST
Fairchild Semiconductor Corporation
Power Field-Effect Transistor, 20A I(D), 55V, 0.036ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, TO-252AA, 3 PIN
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| Pbfree Code | Yes | |
| Rohs Code | Yes | |
| Part Life Cycle Code | Transferred | |
| Ihs Manufacturer | FAIRCHILD SEMICONDUCTOR CORP | |
| Part Package Code | DPAK | |
| Package Description | TO-252AA, 3 PIN | |
| Pin Count | 3 | |
| Manufacturer Package Code | TO252 (D-PAK), MOLDED, 3 LEAD,OPTION AA&AB | |
| Reach Compliance Code | not_compliant | |
| ECCN Code | EAR99 | |
| HTS Code | 8541.29.00.95 | |
| Case Connection | DRAIN | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 55 V | |
| Drain Current-Max (ID) | 20 A | |
| Drain-source On Resistance-Max | 0.036 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JEDEC-95 Code | TO-252AA | |
| JESD-30 Code | R-PSSO-G2 | |
| JESD-609 Code | e3 | |
| Moisture Sensitivity Level | 1 | |
| Number of Elements | 1 | |
| Number of Terminals | 2 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 175 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| Peak Reflow Temperature (Cel) | 260 | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 93 W | |
| Qualification Status | Not Qualified | |
| Surface Mount | YES | |
| Terminal Finish | MATTE TIN | |
| Terminal Form | GULL WING | |
| Terminal Position | SINGLE | |
| Time@Peak Reflow Temperature-Max (s) | 30 | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |
Alternate Parts for HUF75321D3ST
This table gives cross-reference parts and alternative options found for HUF75321D3ST. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of HUF75321D3ST, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Description | Manufacturer | Compare |
|---|---|---|---|
| STD30NE06 | 30A, 60V, 0.03ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252, TO-252, DPAK-3 | STMicroelectronics | HUF75321D3ST vs STD30NE06 |
| HUF75321D3S_NL | Power Field-Effect Transistor, 20A I(D), 55V, 0.036ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, | Fairchild Semiconductor Corporation | HUF75321D3ST vs HUF75321D3S_NL |
| HUF75321D3ST_NL | Power Field-Effect Transistor, 20A I(D), 55V, 0.036ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, TO-252AA, 3 PIN | Fairchild Semiconductor Corporation | HUF75321D3ST vs HUF75321D3ST_NL |
| HUF75321D3S | Power Field-Effect Transistor, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA | Harris Semiconductor | HUF75321D3ST vs HUF75321D3S |
| HUF75321D3ST | N-Channel UltraFET Power MOSFET 55V, 20A, 36mΩ, 2500-REEL | onsemi | HUF75321D3ST vs HUF75321D3ST |
| HUF75321D3S | 20A, 55V, 0.036ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252AA | Intersil Corporation | HUF75321D3ST vs HUF75321D3S |