Part Details for HUF75329D3S by Rochester Electronics LLC
Overview of HUF75329D3S by Rochester Electronics LLC
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- Number of FFF Equivalents:
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- Part Data Attributes
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Part Details for HUF75329D3S
HUF75329D3S CAD Models
HUF75329D3S Part Data Attributes
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HUF75329D3S
Rochester Electronics LLC
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Datasheet
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HUF75329D3S
Rochester Electronics LLC
20A, 55V, 0.026ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252AA
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| Pbfree Code | Yes | |
| Part Life Cycle Code | Active | |
| Ihs Manufacturer | ROCHESTER ELECTRONICS LLC | |
| Reach Compliance Code | unknown | |
| Case Connection | DRAIN | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 55 V | |
| Drain Current-Max (ID) | 20 A | |
| Drain-source On Resistance-Max | 0.026 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JEDEC-95 Code | TO-252AA | |
| JESD-30 Code | R-PSSO-G2 | |
| JESD-609 Code | e3 | |
| Moisture Sensitivity Level | NOT APPLICABLE | |
| Number of Elements | 1 | |
| Number of Terminals | 2 | |
| Operating Mode | ENHANCEMENT MODE | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| Peak Reflow Temperature (Cel) | NOT APPLICABLE | |
| Polarity/Channel Type | N-CHANNEL | |
| Qualification Status | COMMERCIAL | |
| Surface Mount | YES | |
| Terminal Finish | MATTE TIN | |
| Terminal Form | GULL WING | |
| Terminal Position | SINGLE | |
| Time@Peak Reflow Temperature-Max (s) | NOT APPLICABLE | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |
Alternate Parts for HUF75329D3S
This table gives cross-reference parts and alternative options found for HUF75329D3S. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of HUF75329D3S, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Description | Manufacturer | Compare |
|---|---|---|---|
| HUF75329D3ST | Power Field-Effect Transistor, 20A I(D), 55V, 0.026ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, | Fairchild Semiconductor Corporation | HUF75329D3S vs HUF75329D3ST |
| HUF75329D3S_NL | 20A, 55V, 0.026ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252AA | Rochester Electronics LLC | HUF75329D3S vs HUF75329D3S_NL |
| HUF75329D3S | Power Field-Effect Transistor, 0.026ohm, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA | Harris Semiconductor | HUF75329D3S vs HUF75329D3S |
| HUF75329D3S | Power Field-Effect Transistor, 20A I(D), 55V, 0.026ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, | Fairchild Semiconductor Corporation | HUF75329D3S vs HUF75329D3S |
| HUF75329D3S | 20A, 55V, 0.026ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252AA | Intersil Corporation | HUF75329D3S vs HUF75329D3S |
| HUF75329D3ST_NL | Power Field-Effect Transistor, 20A I(D), 55V, 0.026ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, | Fairchild Semiconductor Corporation | HUF75329D3S vs HUF75329D3ST_NL |
| HUF75329D3ST_NL | 20A, 55V, 0.026ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252AA | Rochester Electronics LLC | HUF75329D3S vs HUF75329D3ST_NL |