Part Details for HUF75639P3 by onsemi
Results Overview of HUF75639P3 by onsemi
- Distributor Offerings: (9 listings)
- Number of FFF Equivalents: (0 replacements)
- Tariff Estimator: (Not Available)
- Number of Functional Equivalents: (5 options)
- CAD Models: (Request Part)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
HUF75639P3 Information
HUF75639P3 by onsemi is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Price & Stock for HUF75639P3
| Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
58K1612
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Newark | N Channel Mosfet, 100V, 56A, To-220Ab, Channel Type:N Channel, Drain Source Voltage Vds:100V, Continuous Drain Current Id:56A, Transistor Mounting:Through Hole, Rds(On) Test Voltage:10V, Gate Source Threshold Voltage Max:4V, Msl:- Rohs Compliant: Yes |Onsemi HUF75639P3 RoHS: Compliant Min Qty: 200 Package Multiple: 1 Date Code: 0 Container: Bulk | 0 |
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$1.5400 / $2.1200 | Buy Now |
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DISTI #
HUF75639P3
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Avnet Americas | - Rail/Tube (Alt: HUF75639P3) COO: United States of America (the) RoHS: Compliant Min Qty: 800 Package Multiple: 800 Lead time: 20 Weeks, 0 Days Container: Tube | 0 |
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$1.0436 / $1.1927 | Buy Now |
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Rochester Electronics | HUF75639P3 - N-Channel UltraFET Power MOSFET 100 V, 56 A, 25 mOhm RoHS: Not Compliant Status: Active Min Qty: 1 | 169 |
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$0.8804 / $1.4200 | Buy Now |
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DISTI #
HUF75639P3
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TME | Transistor: N-MOSFET, unipolar, 100V, 56A, 200W, TO220AB Min Qty: 1 | 33 |
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$1.5200 / $2.9500 | Buy Now |
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DISTI #
HUF75639P3
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Avnet Asia | (Alt: HUF75639P3) RoHS: Compliant Min Qty: 800 Package Multiple: 800 Lead time: 20 Weeks, 0 Days | 0 |
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RFQ | |
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DISTI #
HUF75639P3
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Avnet Silica | (Alt: HUF75639P3) RoHS: Compliant Min Qty: 50 Package Multiple: 50 Lead time: 21 Weeks, 0 Days | Silica - 550 |
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Buy Now | |
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Chip Stock | TransistorHUF75639P3N-ChannelPowerMOSFET100Volt56ATO-220AB | 10590 |
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RFQ | |
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DISTI #
HUF75639P3
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EBV Elektronik | (Alt: HUF75639P3) RoHS: Compliant Min Qty: 50 Package Multiple: 50 Lead time: 22 Weeks, 0 Days | EBV - 0 |
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Buy Now | |
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New Advantage Corporation | TO-220 3LPWR MOS ULTRAFET 100V/53A/0.025 OHM N-CH RoHS: Compliant Min Qty: 1 Package Multiple: 50 | 2200 |
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$1.5700 / $1.7000 | Buy Now |
Part Details for HUF75639P3
HUF75639P3 CAD Models
HUF75639P3 Part Data Attributes
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HUF75639P3
onsemi
Buy Now
Datasheet
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Compare Parts:
HUF75639P3
onsemi
N-Channel UltraFET Power MOSFET 100V, 56A, 25mΩ, TO-220-3, 800-TUBE
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| Pbfree Code | Yes | |
| Rohs Code | Yes | |
| Part Life Cycle Code | Active | |
| Ihs Manufacturer | ONSEMI | |
| Part Package Code | TO-220-3 | |
| Manufacturer Package Code | 340AT | |
| Reach Compliance Code | Not Compliant | |
| ECCN Code | EAR99 | |
| Factory Lead Time | 12 Weeks | |
| Samacsys Manufacturer | onsemi | |
| Case Connection | DRAIN | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 100 V | |
| Drain Current-Max (ID) | 56 A | |
| Drain-source On Resistance-Max | 0.025 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JEDEC-95 Code | TO-220AB | |
| JESD-30 Code | R-PSFM-T3 | |
| JESD-609 Code | e3 | |
| Number of Elements | 1 | |
| Number of Terminals | 3 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 175 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | FLANGE MOUNT | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 200 W | |
| Qualification Status | Not Qualified | |
| Surface Mount | NO | |
| Terminal Finish | Matte Tin (Sn) - annealed | |
| Terminal Form | THROUGH-HOLE | |
| Terminal Position | SINGLE | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |
Alternate Parts for HUF75639P3
This table gives cross-reference parts and alternative options found for HUF75639P3. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of HUF75639P3, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Manufacturer | Composite Price | Description | Compare |
|---|---|---|---|---|
| HUF75639P3 | Fairchild Semiconductor Corporation | Check for Price | N-Channel UltraFET Power MOSFET 100V, 56A, 25mΩ, TO-220, MOLDED, 3LEAD, JEDEC VARIATION AB, 800/RAIL | HUF75639P3 vs HUF75639P3 |
| HUF75639P3_NL | Fairchild Semiconductor Corporation | Check for Price | Power Field-Effect Transistor, 56A I(D), 100V, 0.025ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, | HUF75639P3 vs HUF75639P3_NL |
| HUF75639P3 | Intersil Corporation | Check for Price | 56A, 100V, 0.025ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB | HUF75639P3 vs HUF75639P3 |
| HUF75639P3_NL | Rochester Electronics LLC | Check for Price | 56A, 100V, 0.025ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB | HUF75639P3 vs HUF75639P3_NL |
| HUF75639P3 | Rochester Electronics LLC | Check for Price | 56A, 100V, 0.025ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB | HUF75639P3 vs HUF75639P3 |
HUF75639P3 Frequently Asked Questions (FAQ)
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The maximum operating temperature range for the HUF75639P3 is -40°C to 150°C.
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To ensure proper biasing, follow the recommended voltage and current settings outlined in the datasheet, and consider using a voltage regulator or biasing circuit to maintain stable operating conditions.
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For optimal thermal performance, use a multi-layer PCB with thermal vias, and ensure good thermal conductivity between the device and the heat sink. Follow the recommended PCB layout guidelines in the datasheet and application notes.
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Handle the device with ESD-protective equipment, such as wrist straps and mats, and ensure that the PCB and components are properly grounded. Follow proper ESD handling and storage procedures to prevent damage.
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Follow the testing and validation procedures outlined in the datasheet and application notes, including characterization of electrical parameters, thermal performance, and reliability testing.