Datasheets
HUFA76409D3ST by:

Power Field-Effect Transistor, 18A I(D), 60V, 0.075ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA

Part Details for HUFA76409D3ST by Fairchild Semiconductor Corporation

Overview of HUFA76409D3ST by Fairchild Semiconductor Corporation

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Price & Stock for HUFA76409D3ST

Part # Distributor Description Stock Price Buy
Bristol Electronics   2500
RFQ
Bristol Electronics   2500
RFQ
Quest Components 18 A, 60 V, 0.075 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252AA 5860
  • 1 $0.9900
  • 1,940 $0.3630
  • 4,133 $0.3465
$0.3465 / $0.9900 Buy Now
Quest Components 18 A, 60 V, 0.075 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252AA 2000
  • 1 $1.6500
  • 243 $0.6600
  • 1,213 $0.5775
$0.5775 / $1.6500 Buy Now
Sense Electronic Company Limited TO252 2500
RFQ

Part Details for HUFA76409D3ST

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HUFA76409D3ST Part Data Attributes

HUFA76409D3ST Fairchild Semiconductor Corporation
Buy Now Datasheet
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HUFA76409D3ST Fairchild Semiconductor Corporation Power Field-Effect Transistor, 18A I(D), 60V, 0.075ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA
Pbfree Code Yes
Rohs Code Yes
Part Life Cycle Code Transferred
Ihs Manufacturer FAIRCHILD SEMICONDUCTOR CORP
Part Package Code DPAK
Pin Count 3
Manufacturer Package Code TO252 (D-PAK), MOLDED, 3 LEAD,OPTION AA&AB
Reach Compliance Code not_compliant
ECCN Code EAR99
HTS Code 8541.29.00.95
Case Connection DRAIN
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 60 V
Drain Current-Max (ID) 18 A
Drain-source On Resistance-Max 0.075 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code TO-252AA
JESD-30 Code R-PSSO-G2
JESD-609 Code e3
Moisture Sensitivity Level 1
Number of Elements 1
Number of Terminals 2
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 175 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Peak Reflow Temperature (Cel) 260
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 49 W
Qualification Status Not Qualified
Surface Mount YES
Terminal Finish MATTE TIN
Terminal Form GULL WING
Terminal Position SINGLE
Time@Peak Reflow Temperature-Max (s) 30
Transistor Application SWITCHING
Transistor Element Material SILICON

Alternate Parts for HUFA76409D3ST

This table gives cross-reference parts and alternative options found for HUFA76409D3ST. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of HUFA76409D3ST, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
HUFA76409D3ST 18A, 60V, 0.075ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252AA Intersil Corporation HUFA76409D3ST vs HUFA76409D3ST
HUFA76409D3ST 18A, 60V, 0.075ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252AA Rochester Electronics LLC HUFA76409D3ST vs HUFA76409D3ST
HUFA76409D3ST N-Channel Logic Level UltraFET® Power MOSFET 60V, 17A, 71mΩ, 2500-REEL, Automotive Qualified onsemi HUFA76409D3ST vs HUFA76409D3ST
Part Number Description Manufacturer Compare
BUZ71 14A, 50V, 0.1ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB Rochester Electronics LLC HUFA76409D3ST vs BUZ71
MTD20N06VT4 20A, 60V, 0.085ohm, N-CHANNEL, Si, POWER, MOSFET Motorola Mobility LLC HUFA76409D3ST vs MTD20N06VT4
MTD3055VT4 12A, 60V, 0.15ohm, N-CHANNEL, Si, POWER, MOSFET Motorola Mobility LLC HUFA76409D3ST vs MTD3055VT4
HUFA76409P3 18A, 60V, 0.074ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB Intersil Corporation HUFA76409D3ST vs HUFA76409P3
HUFA76413D3 20A, 60V, 0.061ohm, N-CHANNEL, Si, POWER, MOSFET, TO-251AA Intersil Corporation HUFA76409D3ST vs HUFA76413D3
IRFZ20 Power Field-Effect Transistor, 15A I(D), 50V, 0.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB International Rectifier HUFA76409D3ST vs IRFZ20
HUF75329D3 20A, 55V, 0.026ohm, N-CHANNEL, Si, POWER, MOSFET, TO-251AA Intersil Corporation HUFA76409D3ST vs HUF75329D3
934055349118 TRANSISTOR 19 A, 55 V, 0.075 ohm, N-CHANNEL, Si, POWER, MOSFET, DPAK-3, FET General Purpose Power NXP Semiconductors HUFA76409D3ST vs 934055349118
BUZ101SL Power Field-Effect Transistor, 21A I(D), 55V, 0.07ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220AB, 3 PIN Siemens HUFA76409D3ST vs BUZ101SL
HUF75329D3ST 20A, 55V, 0.026ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252AA Rochester Electronics LLC HUFA76409D3ST vs HUF75329D3ST

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