Memory
HY57V161610DLTC-10P
SK Hynix Inc
Description: Synchronous DRAM, 1MX16, 6ns, CMOS, PDSO50, 0.400 X 0.825 INCH, 0.80 MM PITCH, TSOP2-50

Overview of HY57V161610DLTC-10P by SK Hynix Inc

Note: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.

Available Datasheets

Part # Manufacturer Description Datasheet
AD5752RBREZ Analog Devices Dual 16Bit DAC 8 LSB INL + 10p
AD5752RBREZ-REEL7 Analog Devices Dual 16Bit DAC 8 LSB INL + 10p
LTC2634CMSE-HMI10#TRPBF Analog Devices 4x 12-/10-/8-B R2R DACs w/ 10p

CAD Models for HY57V161610DLTC-10P by SK Hynix Inc
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Part Data Attributes for HY57V161610DLTC-10P by SK Hynix Inc

HY57V161610DLTC-10P
SK Hynix Inc
-
-
Part Life Cycle Code
Obsolete
Ihs Manufacturer
SK HYNIX INC
Part Package Code
TSOP2
Package Description
TSOP2,
Pin Count
50
Reach Compliance Code
unknown
ECCN Code
EAR99
HTS Code
8542.32.00.02
Access Mode
DUAL BANK PAGE BURST
Access Time-Max
6 ns
Additional Feature
AUTO/SELF REFRESH
JESD-30 Code
R-PDSO-G50
JESD-609 Code
e6
Length
20.95 mm
Memory Density
16777216 bit
Memory IC Type
SYNCHRONOUS DRAM
Memory Width
16
Number of Functions
1
Number of Ports
1
Number of Terminals
50
Number of Words
1048576 words
Number of Words Code
1000000
Operating Mode
SYNCHRONOUS
Operating Temperature-Max
70 °C
Operating Temperature-Min
Organization
1MX16
Package Body Material
PLASTIC/EPOXY
Package Code
TSOP2
Package Shape
RECTANGULAR
Package Style
SMALL OUTLINE, THIN PROFILE
Qualification Status
Not Qualified
Seated Height-Max
1.2 mm
Self Refresh
YES
Supply Voltage-Max (Vsup)
3.6 V
Supply Voltage-Min (Vsup)
3 V
Supply Voltage-Nom (Vsup)
3.3 V
Surface Mount
YES
Technology
CMOS
Temperature Grade
COMMERCIAL
Terminal Finish
TIN BISMUTH
Terminal Form
GULL WING
Terminal Pitch
0.8 mm
Terminal Position
DUAL
Width
10.16 mm
Want to compare parts?
  1. HY57V161610DLTC-10P
    SK Hynix Inc
    Synchronous DRAM, 1MX16, 6ns, CMOS, PDSO50, 0.400 X 0.825 INCH, 0.80 MM PITCH, TSOP2-50
    VS

Alternate Parts for HY57V161610DLTC-10P

This table gives cross-reference parts and alternative options found for HY57V161610DLTC-10P. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of HY57V161610DLTC-10P, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number Description Manufacturer Compare
UPD4516161DG5-A80-9NF Synchronous DRAM, 1MX16, 6ns, MOS, PDSO50, 10.16 MM, PLASTIC, TSOP-50 Elpida Memory Inc HY57V161610DLTC-10P vs UPD4516161DG5-A80-9NF
MB81F161622C-70FN Synchronous DRAM, 1MX16, 6ns, CMOS, PDSO50, 0.400 INCH, PLASTIC, TSOP2-50 FUJITSU Semiconductor Limited HY57V161610DLTC-10P vs MB81F161622C-70FN
HY57V161610CLTC-10S Synchronous DRAM, 1MX16, 6ns, CMOS, PDSO50, 0.400 X 0.825 INCH, 0.80 MM PITCH, TSOP2-50 SK Hynix Inc HY57V161610DLTC-10P vs HY57V161610CLTC-10S
KM416S1020CT-F7 Synchronous DRAM, 1MX16, 6ns, CMOS, PDSO50, 0.400 X 0.825 INCH, 0.80 MM PITCH, TSOP2-50 Samsung Semiconductor HY57V161610DLTC-10P vs KM416S1020CT-F7
KM416S1020CT-GH Synchronous DRAM, 1MX16, 6ns, CMOS, PDSO50, 0.400 X 0.825 INCH, 0.80 MM PITCH, PLASTIC, TSOP2-50 Samsung Semiconductor HY57V161610DLTC-10P vs KM416S1020CT-GH
MB81F161622B-80FN Synchronous DRAM, 1MX16, 6ns, CMOS, PDSO50, 0.400 INCH, PLASTIC, TSOP2-50 FUJITSU Limited HY57V161610DLTC-10P vs MB81F161622B-80FN
MT48LC1M16A1TG-8ASIT Synchronous DRAM, 1MX16, 6ns, CMOS, PDSO50, 0.400 INCH, PLASTIC, TSOP-50 Micron Technology Inc HY57V161610DLTC-10P vs MT48LC1M16A1TG-8ASIT
MB81F161622B-103FN Synchronous DRAM, 1MX16, 6ns, CMOS, PDSO50, 0.400 INCH, PLASTIC, TSOP2-50 FUJITSU Semiconductor Limited HY57V161610DLTC-10P vs MB81F161622B-103FN
MB81F161622B-75FN Synchronous DRAM, 1MX16, 6ns, CMOS, PDSO50, 0.400 INCH, PLASTIC, TSOP2-50 FUJITSU Limited HY57V161610DLTC-10P vs MB81F161622B-75FN
HY57V161610DTC-10P Synchronous DRAM, 1MX16, 6ns, CMOS, PDSO50, 0.400 X 0.825 INCH, 0.80 MM PITCH, TSOP2-50 SK Hynix Inc HY57V161610DLTC-10P vs HY57V161610DTC-10P
Part Number Description Manufacturer Compare
VG3617161ET-8 Synchronous DRAM, 1MX16, 6ns, CMOS, PDSO50, 0.400 INCH, PLASTIC, TSOP2-50 Vanguard International Semiconductor Corporation HY57V161610DLTC-10P vs VG3617161ET-8
IS42S16100B-6T Synchronous DRAM, 1MX16, 5.5ns, CMOS, PDSO50, 0.400 INCH, TSOP2-50 Integrated Silicon Solution Inc HY57V161610DLTC-10P vs IS42S16100B-6T
K4S161622D-TI10 Synchronous DRAM, 1MX16, 6ns, CMOS, PDSO50, 0.400 X 0.825 INCH, TSOP2-50 Samsung Semiconductor HY57V161610DLTC-10P vs K4S161622D-TI10
HY57V161610DLTC-10S Synchronous DRAM, 1MX16, 6ns, CMOS, PDSO50, 0.400 X 0.825 INCH, 0.80 MM PITCH, TSOP2-50 SK Hynix Inc HY57V161610DLTC-10P vs HY57V161610DLTC-10S
UPD4516161AG5-A80-9NF Synchronous DRAM, 1MX16, 6ns, MOS, PDSO50, 0.400 INCH, PLASTIC, TSOP2-50 Elpida Memory Inc HY57V161610DLTC-10P vs UPD4516161AG5-A80-9NF
K4S161622E-TI55 Synchronous DRAM, 1MX16, 5ns, CMOS, PDSO50, 0.400 X 0.825 INCH, TSOP2-50 Samsung Semiconductor HY57V161610DLTC-10P vs K4S161622E-TI55
HY57V161610DTC-15 Synchronous DRAM, 1MX16, 7ns, CMOS, PDSO50, 0.400 X 0.825 INCH, 0.80 MM PITCH, TSOP2-50 SK Hynix Inc HY57V161610DLTC-10P vs HY57V161610DTC-15
UPD4516161AG5-A12-9NF Synchronous DRAM, 1MX16, 8ns, MOS, PDSO50, 0.400 INCH, PLASTIC, TSOP2-50 NEC Electronics Group HY57V161610DLTC-10P vs UPD4516161AG5-A12-9NF
IS42VS16100D-75T Synchronous DRAM, 1MX16, 6ns, CMOS, PDSO50, PLASTIC, TSOP2-50 Integrated Silicon Solution Inc HY57V161610DLTC-10P vs IS42VS16100D-75T
HYB39S16160AT-8 Synchronous DRAM, 1MX16, 8ns, CMOS, PDSO50, 0.400 INCH, TSSOP2-50 Siemens HY57V161610DLTC-10P vs HYB39S16160AT-8

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