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IAUT300N08S5N012ATMA2 by: Infineon Technologies AG

Power Field-Effect Transistor,

Part Details for IAUT300N08S5N012ATMA2 by Infineon Technologies AG

Results Overview of IAUT300N08S5N012ATMA2 by Infineon Technologies AG

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Applications Automotive

IAUT300N08S5N012ATMA2 Information

IAUT300N08S5N012ATMA2 by Infineon Technologies AG is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.

A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.

Price & Stock for IAUT300N08S5N012ATMA2

Part # Distributor Description Stock Price Buy
DISTI # 2888480
Farnell MOSFET, AEC-Q101, N-CH, 80V, HSOF COO: MY RoHS: Compliant Min Qty: 1 Lead time: 19 Weeks, 1 Days Container: Cut Tape 33483
  • 1 $4.7724
  • 10 $3.4708
  • 100 $2.6426
  • 500 $2.4585
  • 1,000 $2.4059
$2.4059 / $4.7724 Buy Now
DISTI # 2888480RL
Farnell MOSFET, AEC-Q101, N-CH, 80V, HSOF COO: MY RoHS: Compliant Min Qty: 100 Lead time: 19 Weeks, 1 Days Container: Reel 33483
  • 100 $2.6426
  • 500 $2.4585
  • 1,000 $2.4059
$2.4059 / $2.6426 Buy Now
DISTI # 4319233
Farnell MOSFET, N-CH, 80V, 300A, HSOF COO: MY RoHS: Compliant Min Qty: 2000 Lead time: 19 Weeks, 1 Days Container: Reel 0
  • 2,000 $2.6426
  • 6,000 $2.5900
$2.5900 / $2.6426 Buy Now
DISTI # IAUT300N08S5N012ATMA2
Avnet Americas Trans MOSFET N 80V 300A 8-Pin PSOF T/R - Tape and Reel (Alt: IAUT300N08S5N012ATMA2) COO: Austria RoHS: Compliant Min Qty: 2000 Package Multiple: 2000 Lead time: 18 Weeks, 0 Days Container: Reel 0
  • 2,000 $2.7517
  • 4,000 $2.6445
  • 8,000 $2.5373
  • 16,000 $2.4301
  • 32,000 $2.3854
$2.3854 / $2.7517 Buy Now
Rochester Electronics Power Field-Effect Transistor, 300A I(D), 80V, 0.0012ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET RoHS: Compliant Status: Active Min Qty: 1 352456
  • 25 $2.3500
  • 100 $2.2300
  • 500 $2.1200
  • 1,000 $2.0000
  • 10,000 $1.8800
$1.8800 / $2.3500 Buy Now
DISTI # IAUT300N08S5N012
TME Transistor: N-MOSFET, unipolar, 80V, 300A, 375W, PG-HSOF-8 Min Qty: 1 0
  • 1 $5.0500
  • 10 $4.5400
  • 25 $4.0100
  • 100 $3.6100
  • 250 $3.3600
  • 500 $3.2400
  • 1,000 $3.1200
  • 2,000 $3.0000
$3.0000 / $5.0500 RFQ
DISTI # IAUT300N08S5N012ATMA2
IBS Electronics TRANSISTOR MOSFET N-CH 80VDS 80A 1.2MOHM HSOF SMD Min Qty: 2000 Package Multiple: 1 2000
  • 2,000 $4.4660
$4.4660 Buy Now
DISTI # IAUT300N08S5N012ATMA2
Chip One Stop Semiconductors RoHS: Compliant Min Qty: 1 Lead time: 0 Weeks, 1 Days Container: Cut Tape 4810
  • 1 $2.7800
  • 10 $2.5000
  • 50 $2.4400
  • 100 $2.4000
  • 200 $2.2800
  • 500 $2.1100
$2.1100 / $2.7800 Buy Now
Chip Stock 80V,N-Ch,1.2mΩmax,AutomotiveMOSFET,TOLL,OptiMOS™-5,PG-HSOF-8,RoHS 70995
RFQ
DISTI # SP001585160
EBV Elektronik Trans MOSFET N 80V 300A 8Pin PSOF TR (Alt: SP001585160) RoHS: Compliant Min Qty: 2000 Package Multiple: 2000 Lead time: 19 Weeks, 0 Days EBV - 0
Buy Now
Win Source Electronics MOSFET N-CH 80V 300A 8HSOF 2583
  • 17 $2.9498
  • 42 $2.4204
  • 64 $2.3448
  • 89 $2.2691
  • 114 $2.1935
  • 153 $1.9666
$1.9666 / $2.9498 Buy Now

Part Details for IAUT300N08S5N012ATMA2

IAUT300N08S5N012ATMA2 CAD Models

  • Part Symbol

    schematic symbol

  • Footprint

    pcb footprint

  • 3D Model

    2d presentation

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IAUT300N08S5N012ATMA2 Part Data Attributes

Parametric Data
IAUT300N08S5N012ATMA2 Infineon Technologies AG
Buy Now Datasheet
Compare Parts:
IAUT300N08S5N012ATMA2 Infineon Technologies AG Power Field-Effect Transistor,
Rohs Code Yes
Part Life Cycle Code Active
Package Description Hsof-8-1, 8 Pin
Reach Compliance Code Not Compliant
ECCN Code EAR99
Factory Lead Time 18 Weeks
Avalanche Energy Rating (Eas) 817 Mj
Case Connection Drain
Configuration Single With Built-In Diode
DS Breakdown Voltage-Min 80 V
Drain Current-Max (ID) 300 A
Drain-source On Resistance-Max 0.0012 Ω
FET Technology Metal-Oxide Semiconductor
Feedback Cap-Max (Crss) 130 Pf
JESD-30 Code R-PSSO-F8
JESD-609 Code e3
Moisture Sensitivity Level 1
Number of Elements 1
Number of Terminals 8
Operating Mode Enhancement Mode
Operating Temperature-Max 175 °C
Operating Temperature-Min -55 °C
Package Body Material Plastic/Epoxy
Package Shape Rectangular
Package Style Small Outline
Polarity/Channel Type N-Channel
Power Dissipation-Max (Abs) 375 W
Pulsed Drain Current-Max (IDM) 1200 A
Reference Standard Aec-Q101
Surface Mount Yes
Terminal Finish Tin (Sn)
Terminal Form Flat
Terminal Position Single
Transistor Element Material Silicon

Alternate Parts for IAUT300N08S5N012ATMA2

This table gives cross-reference parts and alternative options found for IAUT300N08S5N012ATMA2. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IAUT300N08S5N012ATMA2, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Manufacturer Composite Price Description Compare
IPT012N08N5 Infineon Technologies AG Check for Price Power Field-Effect Transistor, IAUT300N08S5N012ATMA2 vs IPT012N08N5
IAUS300N08S5N012 Infineon Technologies AG Check for Price Power Field-Effect Transistor, IAUT300N08S5N012ATMA2 vs IAUS300N08S5N012
equivalents icon

IAUT300N08S5N012ATMA2 Frequently Asked Questions (FAQ)

  • The maximum operating temperature range for IAUT300N08S5N012ATMA2 is -40°C to 150°C.

  • Proper cooling can be achieved by using a heat sink with a thermal resistance of ≤ 1.5 K/W, and ensuring good thermal contact between the IGBT and heat sink.

  • The recommended gate resistor value for IAUT300N08S5N012ATMA2 is between 10 Ω to 100 Ω, depending on the specific application and switching frequency.

  • Yes, IAUT300N08S5N012ATMA2 can be used in a parallel configuration, but it's essential to ensure that the gate drive signals are synchronized and the IGBTs are matched in terms of threshold voltage and transconductance.

  • The maximum allowable voltage transient for IAUT300N08S5N012ATMA2 is ±10% of the maximum rated voltage (1200 V).

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