Part Details for IGB30N60T by Infineon Technologies AG
Overview of IGB30N60T by Infineon Technologies AG
- Distributor Offerings: (3 listings)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (0 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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Price & Stock for IGB30N60T
Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
726-IGB30N60T
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Mouser Electronics | IGBT Transistors LOW LOSS IGBT TECH 600V 30A RoHS: Compliant | 996 |
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$1.2900 / $2.7800 | Buy Now |
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Quest Components | 8000 |
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$5.7840 / $11.5680 | Buy Now | |
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ComSIT USA | LOW LOSS IGBT IN TRENCHSTOP TECHNOLOGY Insulated Gate Bipolar Transistor, 60A I(C), 600V V(BR)CES, N-Channel, TO-263AB RoHS: Compliant |
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RFQ |
Part Details for IGB30N60T
IGB30N60T CAD Models
IGB30N60T Part Data Attributes
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IGB30N60T
Infineon Technologies AG
Buy Now
Datasheet
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IGB30N60T
Infineon Technologies AG
Insulated Gate Bipolar Transistor, 60A I(C), 600V V(BR)CES, N-Channel, TO-263AB, GREEN, PLASTIC, TO-263, 3 PIN
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Pbfree Code | Yes | |
Rohs Code | Yes | |
Part Life Cycle Code | Active | |
Ihs Manufacturer | INFINEON TECHNOLOGIES AG | |
Part Package Code | D2PAK | |
Package Description | SMALL OUTLINE, R-PSSO-G2 | |
Pin Count | 4 | |
Reach Compliance Code | compliant | |
ECCN Code | EAR99 | |
Factory Lead Time | 4 Weeks | |
Samacsys Manufacturer | Infineon | |
Additional Feature | HIGH SPEED | |
Case Connection | COLLECTOR | |
Collector Current-Max (IC) | 60 A | |
Collector-Emitter Voltage-Max | 600 V | |
Configuration | SINGLE | |
Gate-Emitter Thr Voltage-Max | 5.7 V | |
Gate-Emitter Voltage-Max | 20 V | |
JEDEC-95 Code | TO-263AB | |
JESD-30 Code | R-PSSO-G2 | |
JESD-609 Code | e3 | |
Moisture Sensitivity Level | 1 | |
Number of Elements | 1 | |
Number of Terminals | 2 | |
Operating Temperature-Max | 175 °C | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | SMALL OUTLINE | |
Peak Reflow Temperature (Cel) | 245 | |
Polarity/Channel Type | N-CHANNEL | |
Power Dissipation-Max (Abs) | 187 W | |
Qualification Status | Not Qualified | |
Surface Mount | YES | |
Terminal Finish | Tin (Sn) | |
Terminal Form | GULL WING | |
Terminal Position | SINGLE | |
Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
Transistor Application | POWER CONTROL | |
Transistor Element Material | SILICON | |
Turn-off Time-Nom (toff) | 382 ns | |
Turn-on Time-Nom (ton) | 50 ns |