Part Details for IGW50N60TFKSA1 by Infineon Technologies AG
Overview of IGW50N60TFKSA1 by Infineon Technologies AG
- Distributor Offerings:
- Number of FFF Equivalents:
- CAD Models:
- Number of Functional Equivalents:
- Part Data Attributes
- Reference Designs:
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Applications
Industrial Automation
Energy and Power Systems
Renewable Energy
Electronic Manufacturing
Price & Stock for IGW50N60TFKSA1
Part # | Distributor | Description | Stock | Price | Buy | |
---|---|---|---|---|---|---|
DISTI #
13T9424
|
Newark | Igbt,600V,50A,to247, Continuous Collector Current:50A, Collector Emitter Saturation Voltage:2V, Power Dissipation:333W, Collector Emitter Voltage Max:600V, No. Of Pins:3Pins, Operating Temperature Max:175°C, Product Range:-, Msl:- Rohs Compliant: Yes |Infineon IGW50N60TFKSA1 Min Qty: 1 Package Multiple: 1 Date Code: 0 Container: Bulk | 169 |
|
$3.2400 / $4.7700 | Buy Now |
DISTI #
IGW50N60TFKSA1-ND
|
DigiKey | IGBT TRENCH FS 600V 100A TO247-3 Min Qty: 1 Lead time: 22 Weeks Container: Tube |
134 In Stock |
|
$2.1692 / $4.4600 | Buy Now |
DISTI #
IGW50N60TFKSA1
|
Avnet Americas | Trans IGBT Chip N-CH 600V 100A 3-Pin(3+Tab) TO-247 - Rail/Tube (Alt: IGW50N60TFKSA1) RoHS: Compliant Min Qty: 240 Package Multiple: 30 Lead time: 22 Weeks, 0 Days Container: Tube | 0 |
|
$2.5806 | Buy Now |
DISTI #
726-IGW50N60TFKSA1
|
Mouser Electronics | IGBT Transistors LOW LOSS IGBT TECH 600V 50A RoHS: Compliant | 216 |
|
$2.1600 / $4.4600 | Buy Now |
|
Future Electronics | RoHS: Compliant pbFree: Yes Min Qty: 240 Package Multiple: 240 Container: Tube | 0Tube |
|
$2.3500 | Buy Now |
|
Rochester Electronics | IGW50N60 - Discrete IGBT without Anti-Parallel Diode RoHS: Compliant Status: Active Min Qty: 1 | 34 |
|
$2.0600 / $2.4300 | Buy Now |
DISTI #
IGW50N60TFKSA1
|
Avnet Americas | Trans IGBT Chip N-CH 600V 100A 3-Pin(3+Tab) TO-247 - Rail/Tube (Alt: IGW50N60TFKSA1) RoHS: Compliant Min Qty: 240 Package Multiple: 30 Lead time: 22 Weeks, 0 Days Container: Tube | 0 |
|
$2.5806 | Buy Now |
DISTI #
IGW50N60T
|
TME | Transistor: IGBT, 600V, 64A, 333W, TO247-3 Min Qty: 1 | 122 |
|
$3.2200 / $4.3400 | Buy Now |
DISTI #
IGW50N60TFKSA1
|
Avnet Americas | Trans IGBT Chip N-CH 600V 100A 3-Pin(3+Tab) TO-247 - Rail/Tube (Alt: IGW50N60TFKSA1) RoHS: Compliant Min Qty: 240 Package Multiple: 30 Lead time: 22 Weeks, 0 Days Container: Tube | 0 |
|
$2.5806 | Buy Now |
DISTI #
SP000054926
|
EBV Elektronik | IGBT, 50 A, 2 V, 333 W, 600 V, TO-247, 3 Pins (Alt: SP000054926) RoHS: Compliant Min Qty: 240 Package Multiple: 240 Lead time: 3 Weeks, 2 Days | EBV - 0 |
|
Buy Now |
Part Details for IGW50N60TFKSA1
IGW50N60TFKSA1 CAD Models
IGW50N60TFKSA1 Part Data Attributes
|
IGW50N60TFKSA1
Infineon Technologies AG
Buy Now
Datasheet
|
Compare Parts:
IGW50N60TFKSA1
Infineon Technologies AG
Insulated Gate Bipolar Transistor, 100A I(C), 600V V(BR)CES, N-Channel, TO-247AC, GREEN, PLASTIC, TO-247, 3 PIN
|
Pbfree Code | Yes | |
Rohs Code | Yes | |
Part Life Cycle Code | Active | |
Ihs Manufacturer | INFINEON TECHNOLOGIES AG | |
Part Package Code | TO-247AC | |
Package Description | FLANGE MOUNT, R-PSFM-T3 | |
Pin Count | 3 | |
Reach Compliance Code | compliant | |
ECCN Code | EAR99 | |
Samacsys Manufacturer | Infineon | |
Additional Feature | FAST SWITCHING | |
Case Connection | COLLECTOR | |
Collector Current-Max (IC) | 100 A | |
Collector-Emitter Voltage-Max | 600 V | |
Configuration | SINGLE | |
JEDEC-95 Code | TO-247AC | |
JESD-30 Code | R-PSFM-T3 | |
JESD-609 Code | e3 | |
Number of Elements | 1 | |
Number of Terminals | 3 | |
Operating Temperature-Max | 175 °C | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | FLANGE MOUNT | |
Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
Polarity/Channel Type | N-CHANNEL | |
Qualification Status | Not Qualified | |
Surface Mount | NO | |
Terminal Finish | Tin (Sn) | |
Terminal Form | THROUGH-HOLE | |
Terminal Position | SINGLE | |
Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
Transistor Application | POWER CONTROL | |
Transistor Element Material | SILICON | |
Turn-off Time-Nom (toff) | 396 ns | |
Turn-on Time-Nom (ton) | 60 ns |