Datasheets
IGW50N65F5FKSA1 by:

Insulated Gate Bipolar Transistor,

Part Details for IGW50N65F5FKSA1 by Infineon Technologies AG

Overview of IGW50N65F5FKSA1 by Infineon Technologies AG

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Applications Industrial Automation

Price & Stock for IGW50N65F5FKSA1

Part # Distributor Description Stock Price Buy
DISTI # 33X0401
Newark Igbt Single Transistor, 50 A, 1.6 V, 305 W, 650 V, To-247, 3 Rohs Compliant: Yes |Infineon IGW50N65F5FKSA1 Min Qty: 1 Package Multiple: 1 Date Code: 1 Container: Bulk 239
  • 1 $5.4800
  • 10 $5.1400
  • 25 $4.7800
  • 50 $4.4400
  • 100 $4.1500
  • 480 $3.8700
$3.8700 / $5.4800 Buy Now
DISTI # IGW50N65F5FKSA1-ND
DigiKey IGBT 650V 80A TO247-3 Min Qty: 1 Lead time: 19 Weeks Container: Tube 430
In Stock
  • 1 $4.8200
  • 30 $3.8177
  • 120 $3.2723
  • 510 $2.9087
  • 1,020 $2.4905
  • 2,010 $2.3451
$2.3451 / $4.8200 Buy Now
DISTI # IGW50N65F5FKSA1
Avnet Americas Trans IGBT Chip N-CH 650V 80A 3-Pin TO-247 Tube - Rail/Tube (Alt: IGW50N65F5FKSA1) RoHS: Compliant Min Qty: 240 Package Multiple: 30 Lead time: 19 Weeks, 0 Days Container: Tube 0
  • 240 $2.7898
$2.7898 Buy Now
DISTI # 726-IGW50N65F5FKSA1
Mouser Electronics IGBT Transistors IGBT PRODUCTS RoHS: Compliant 6
  • 1 $4.8200
  • 10 $4.5900
  • 25 $3.8200
  • 100 $3.2800
  • 240 $3.2100
  • 480 $2.4900
  • 1,200 $2.3400
$2.3400 / $4.8200 Buy Now
Future Electronics   RoHS: Compliant pbFree: Yes Min Qty: 240 Package Multiple: 240 Lead time: 19 Weeks Container: Tube 0
Tube
  • 240 $2.5000
$2.5000 Buy Now
DISTI # 71240573
Verical Trans IGBT Chip N-CH 650V 80A 305W 3-Pin(3+Tab) TO-247 Tube RoHS: Compliant Min Qty: 6 Package Multiple: 1 Date Code: 2310 Americas - 240
  • 6 $5.7625
  • 10 $4.8875
  • 50 $3.7125
  • 100 $3.7000
  • 200 $3.4875
$3.4875 / $5.7625 Buy Now
DISTI # IGW50N65F5
TME Transistor: IGBT, 650V, 80A, 270W, TO247-3, F5 Min Qty: 1 0
  • 1 $5.2200
  • 3 $4.6200
  • 10 $4.1500
  • 30 $3.9100
$3.9100 / $5.2200 RFQ
Ameya Holding Limited   Min Qty: 10 204
  • 10 $5.8404
  • 26 $5.8278
  • 100 $4.7801
  • 200 $4.6411
$4.6411 / $5.8404 Buy Now
Ameya Holding Limited IGBT 650V 80A 305W PG-TO247-3 3
RFQ
DISTI # C1S322001023803
Chip1Stop IGBT discrete RoHS: Compliant pbFree: Yes Container: Tube 240
  • 1 $4.6100
  • 10 $3.9100
  • 50 $2.9700
  • 100 $2.9600
  • 200 $2.7900
$2.7900 / $4.6100 Buy Now
DISTI # SP000973426
EBV Elektronik Trans IGBT Chip N-CH 650V 80A 3-Pin TO-247 Tube (Alt: SP000973426) RoHS: Compliant Min Qty: 240 Package Multiple: 240 Lead time: 23 Weeks, 0 Days EBV - 0
Buy Now

Part Details for IGW50N65F5FKSA1

IGW50N65F5FKSA1 CAD Models

IGW50N65F5FKSA1 Part Data Attributes:

IGW50N65F5FKSA1 Infineon Technologies AG
Buy Now Datasheet
Compare Parts:
IGW50N65F5FKSA1 Infineon Technologies AG Insulated Gate Bipolar Transistor,
Pbfree Code Yes
Rohs Code Yes
Part Life Cycle Code Active
Ihs Manufacturer INFINEON TECHNOLOGIES AG
Package Description ,
Reach Compliance Code compliant
ECCN Code EAR99
Factory Lead Time 19 Weeks
Samacsys Manufacturer Infineon
Case Connection COLLECTOR
Collector Current-Max (IC) 80 A
Collector-Emitter Voltage-Max 650 V
Configuration SINGLE
Gate-Emitter Thr Voltage-Max 4.8 V
Gate-Emitter Voltage-Max 20 V
JEDEC-95 Code TO-247
JESD-30 Code R-PSFM-T3
JESD-609 Code e3
Number of Elements 1
Number of Terminals 3
Operating Temperature-Max 175 °C
Operating Temperature-Min -40 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style FLANGE MOUNT
Peak Reflow Temperature (Cel) NOT SPECIFIED
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 305 W
Surface Mount NO
Terminal Finish Tin (Sn)
Terminal Form THROUGH-HOLE
Terminal Position SINGLE
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Transistor Application POWER CONTROL
Transistor Element Material SILICON
Turn-off Time-Nom (toff) 205 ns
Turn-on Time-Nom (ton) 35 ns
VCEsat-Max 2.1 V

Alternate Parts for IGW50N65F5FKSA1

This table gives cross-reference parts and alternative options found for IGW50N65F5FKSA1. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IGW50N65F5FKSA1, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
IGW50N65F5 Insulated Gate Bipolar Transistor, Infineon Technologies AG IGW50N65F5FKSA1 vs IGW50N65F5
AIGW50N65F5XKSA1 Insulated Gate Bipolar Transistor, Infineon Technologies AG IGW50N65F5FKSA1 vs AIGW50N65F5XKSA1
AIGW50N65F5 Insulated Gate Bipolar Transistor, Infineon Technologies AG IGW50N65F5FKSA1 vs AIGW50N65F5
Part Number Description Manufacturer Compare
APT44GA60B Insulated Gate Bipolar Transistor, 78A I(C), 600V V(BR)CES, N-Channel, TO-247 Microchip Technology Inc IGW50N65F5FKSA1 vs APT44GA60B
AIGW50N65F5 Insulated Gate Bipolar Transistor, Infineon Technologies AG IGW50N65F5FKSA1 vs AIGW50N65F5
AIGW40N65H5XKSA1 Insulated Gate Bipolar Transistor, Infineon Technologies AG IGW50N65F5FKSA1 vs AIGW40N65H5XKSA1
AIGW50N65F5XKSA1 Insulated Gate Bipolar Transistor, Infineon Technologies AG IGW50N65F5FKSA1 vs AIGW50N65F5XKSA1
IGW40N65H5A Insulated Gate Bipolar Transistor Infineon Technologies AG IGW50N65F5FKSA1 vs IGW40N65H5A
APT44GA60S Insulated Gate Bipolar Transistor, 78A I(C), 600V V(BR)CES, N-Channel, ROHS COMPLIANT, D3PAK-3 Microsemi Corporation IGW50N65F5FKSA1 vs APT44GA60S
IGW50N65F5A Insulated Gate Bipolar Transistor Infineon Technologies AG IGW50N65F5FKSA1 vs IGW50N65F5A
IGW50N65F5 Insulated Gate Bipolar Transistor, Infineon Technologies AG IGW50N65F5FKSA1 vs IGW50N65F5
AIGW40N65H5 Insulated Gate Bipolar Transistor, Infineon Technologies AG IGW50N65F5FKSA1 vs AIGW40N65H5

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