Part Details for IKP20N65H5 by Infineon Technologies AG
Overview of IKP20N65H5 by Infineon Technologies AG
- Distributor Offerings: (3 listings)
- Number of FFF Equivalents: (0 crosses)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (2 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Price & Stock for IKP20N65H5
| Part # | Distributor | Description | Stock | Price | Buy | |
|---|---|---|---|---|---|---|
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DISTI #
726-IKP20N65H5
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Mouser Electronics | IGBT Transistors IGBT PRODUCTS TrenchStop 5 RoHS: Compliant | 988 |
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$1.2300 / $2.8600 | Buy Now |
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DISTI #
IKP20N65H5
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TME | Transistor: IGBT, 650V, 20A, 125W, TO220-3, H5 Min Qty: 1 | 48 |
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$2.0500 / $2.7700 | Buy Now |
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LCSC | 125W 42A 650V TO-220-3 IGBTs ROHS | 6 |
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$2.1083 / $3.1886 | Buy Now |
Part Details for IKP20N65H5
IKP20N65H5 CAD Models
IKP20N65H5 Part Data Attributes:
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IKP20N65H5
Infineon Technologies AG
Buy Now
Datasheet
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Compare Parts:
IKP20N65H5
Infineon Technologies AG
Insulated Gate Bipolar Transistor,
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| Rohs Code | Yes | |
| Part Life Cycle Code | Active | |
| Ihs Manufacturer | INFINEON TECHNOLOGIES AG | |
| Package Description | , | |
| Reach Compliance Code | compliant | |
| ECCN Code | EAR99 | |
| Case Connection | COLLECTOR | |
| Collector Current-Max (IC) | 42 A | |
| Collector-Emitter Voltage-Max | 650 V | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| Gate-Emitter Thr Voltage-Max | 4.8 V | |
| Gate-Emitter Voltage-Max | 20 V | |
| JEDEC-95 Code | TO-220AB | |
| JESD-30 Code | R-PSFM-T3 | |
| JESD-609 Code | e3 | |
| Number of Elements | 1 | |
| Number of Terminals | 3 | |
| Operating Temperature-Max | 175 °C | |
| Operating Temperature-Min | -40 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | FLANGE MOUNT | |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 125 W | |
| Surface Mount | NO | |
| Terminal Finish | Tin (Sn) | |
| Terminal Form | THROUGH-HOLE | |
| Terminal Position | SINGLE | |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
| Transistor Application | POWER CONTROL | |
| Transistor Element Material | SILICON | |
| Turn-off Time-Nom (toff) | 218 ns | |
| Turn-on Time-Nom (ton) | 28 ns | |
| VCEsat-Max | 2.1 V |
Alternate Parts for IKP20N65H5
This table gives cross-reference parts and alternative options found for IKP20N65H5. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IKP20N65H5, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Description | Manufacturer | Compare |
|---|---|---|---|
| IRGB20B60PD1PBF | Insulated Gate Bipolar Transistor, 40A I(C), 600V V(BR)CES, N-Channel, TO-220AB, LEAD FREE PACKAGE-3 | Infineon Technologies AG | IKP20N65H5 vs IRGB20B60PD1PBF |
| IRGB20B60PD1 | Insulated Gate Bipolar Transistor, 40A I(C), 600V V(BR)CES, N-Channel, TO-220AB, TO-220AB, 3 PIN | Infineon Technologies AG | IKP20N65H5 vs IRGB20B60PD1 |