Datasheets
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IKW15N120H3 by: Infineon Technologies AG

Insulated Gate Bipolar Transistor, 30A I(C), 1200V V(BR)CES, N-Channel, TO-247, GREEN, PLASTIC PACKAGE-3

Part Details for IKW15N120H3 by Infineon Technologies AG

Results Overview of IKW15N120H3 by Infineon Technologies AG

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Applications Automotive

IKW15N120H3 Information

IKW15N120H3 by Infineon Technologies AG is an IGBT.
IGBTs are under the broader part category of Transistors.

A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.

Price & Stock for IKW15N120H3

Part # Distributor Description Stock Price Buy
DISTI # IKW15N120H3
TME Transistor: IGBT, 1.2kV, 30A, 217W, TO247-3, H3 Min Qty: 1 183
  • 1 $4.6300
  • 2 $3.9800
  • 10 $3.6800
$3.6800 / $4.6300 Buy Now

Part Details for IKW15N120H3

IKW15N120H3 CAD Models

IKW15N120H3 Part Data Attributes

IKW15N120H3 Infineon Technologies AG
Buy Now Datasheet
Compare Parts:
IKW15N120H3 Infineon Technologies AG Insulated Gate Bipolar Transistor, 30A I(C), 1200V V(BR)CES, N-Channel, TO-247, GREEN, PLASTIC PACKAGE-3
Pbfree Code Yes
Rohs Code Yes
Part Life Cycle Code Active
Ihs Manufacturer INFINEON TECHNOLOGIES AG
Part Package Code TO-247
Pin Count 3
Reach Compliance Code Compliant
ECCN Code EAR99
Samacsys Manufacturer Infineon
Collector Current-Max (IC) 30 A
Collector-Emitter Voltage-Max 1200 V
Configuration SINGLE WITH BUILT-IN DIODE
Gate-Emitter Thr Voltage-Max 6.5 V
Gate-Emitter Voltage-Max 20 V
JEDEC-95 Code TO-247
JESD-30 Code R-PSFM-T3
JESD-609 Code e3
Number of Elements 1
Number of Terminals 3
Operating Temperature-Max 175 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style FLANGE MOUNT
Peak Reflow Temperature (Cel) NOT SPECIFIED
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 217 W
Qualification Status Not Qualified
Surface Mount NO
Terminal Finish Tin (Sn)
Terminal Form THROUGH-HOLE
Terminal Position SINGLE
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Transistor Application POWER CONTROL
Transistor Element Material SILICON
Turn-off Time-Nom (toff) 370 ns
Turn-on Time-Nom (ton) 49 ns

Alternate Parts for IKW15N120H3

This table gives cross-reference parts and alternative options found for IKW15N120H3. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IKW15N120H3, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Manufacturer Composite Price Description Compare
IHW40N60RF Infineon Technologies AG Check for Price Insulated Gate Bipolar Transistor, 80A I(C), 600V V(BR)CES, N-Channel, TO-247, GREEN, PLASTIC PACKAGE-3 IKW15N120H3 vs IHW40N60RF
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IKW15N120H3 Related Parts

IKW15N120H3 Frequently Asked Questions (FAQ)

  • The maximum operating frequency of the IKW15N120H3 is 20 kHz, but it can be used up to 50 kHz with some limitations.

  • Proper thermal management can be achieved by ensuring good heat sink contact, using a thermal interface material, and maintaining a maximum junction temperature of 150°C.

  • The recommended gate resistor value is between 10 Ω to 20 Ω, depending on the specific application and switching frequency.

  • Yes, the IKW15N120H3 can be used in a parallel configuration, but it requires careful consideration of the current sharing and thermal management between the modules.

  • The maximum allowable voltage transient for the IKW15N120H3 is ±10% of the DC bus voltage, but it's recommended to limit it to ±5% for reliable operation.

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