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Insulated Gate Bipolar Transistor, 80A I(C), 1200V V(BR)CES, N-Channel, TO-247, GREEN, PLASTIC PACKAGE-3
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
726-IKW40N120H3
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Mouser Electronics | IGBTs IGBT PRODUCTS RoHS: Compliant | 1514 |
|
$4.9000 / $7.9900 | Buy Now |
DISTI #
67611325
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Verical | High speed Trans IGBT Chip RoHS: Compliant Min Qty: 13 Package Multiple: 1 Date Code: 2101 | Americas - 290 |
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$5.5544 / $6.4409 | Buy Now |
|
Bristol Electronics | Min Qty: 1 | 77 |
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$2.5090 / $5.3760 | Buy Now |
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Bristol Electronics | 43 |
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RFQ | ||
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Quest Components | INSULATED GATE BIPOLAR TRANSISTOR, 80A I(C), 1200V V(BR)CES, N-CHANNEL, TO-247 | 232 |
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$6.7485 / $12.2700 | Buy Now |
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Quest Components | INSULATED GATE BIPOLAR TRANSISTOR, 80A I(C), 1200V V(BR)CES, N-CHANNEL, TO-247 | 61 |
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$3.3600 / $7.2000 | Buy Now |
DISTI #
IKW40N120H3
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TME | Transistor: IGBT, 1.2kV, 80A, 483W, TO247-3, H3 Min Qty: 1 | 0 |
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$6.4500 / $8.9900 | RFQ |
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CoreStaff Co Ltd | RoHS(Ship within 1day) - D/C 2021 Date Code: 2021 | 290 |
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$4.0900 / $5.5700 | Buy Now |
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LCSC | TO-247AC-3 IGBT Transistors / Modules ROHS | 1514 |
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$2.5852 / $4.4152 | Buy Now |
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MacroQuest Electronics | ISO 9001: 2015, ISO 14001:2015, ISO 45001:2018 | 2330 |
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$3.2100 / $4.2900 | Buy Now |
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IKW40N120H3
Infineon Technologies AG
Buy Now
Datasheet
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Compare Parts:
IKW40N120H3
Infineon Technologies AG
Insulated Gate Bipolar Transistor, 80A I(C), 1200V V(BR)CES, N-Channel, TO-247, GREEN, PLASTIC PACKAGE-3
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Pbfree Code | Yes | |
Rohs Code | Yes | |
Part Life Cycle Code | Active | |
Ihs Manufacturer | INFINEON TECHNOLOGIES AG | |
Part Package Code | TO-247 | |
Package Description | FLANGE MOUNT, R-PSFM-T3 | |
Pin Count | 3 | |
Reach Compliance Code | compliant | |
ECCN Code | EAR99 | |
Samacsys Manufacturer | Infineon | |
Collector Current-Max (IC) | 80 A | |
Collector-Emitter Voltage-Max | 1200 V | |
Configuration | SINGLE WITH BUILT-IN DIODE | |
Gate-Emitter Thr Voltage-Max | 6.5 V | |
Gate-Emitter Voltage-Max | 20 V | |
JEDEC-95 Code | TO-247 | |
JESD-30 Code | R-PSFM-T3 | |
JESD-609 Code | e3 | |
Number of Elements | 1 | |
Number of Terminals | 3 | |
Operating Temperature-Max | 175 °C | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | FLANGE MOUNT | |
Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
Polarity/Channel Type | N-CHANNEL | |
Power Dissipation-Max (Abs) | 483 W | |
Qualification Status | Not Qualified | |
Surface Mount | NO | |
Terminal Finish | Tin (Sn) | |
Terminal Form | THROUGH-HOLE | |
Terminal Position | SINGLE | |
Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
Transistor Application | POWER CONTROL | |
Transistor Element Material | SILICON | |
Turn-off Time-Nom (toff) | 414 ns | |
Turn-on Time-Nom (ton) | 78 ns |
This table gives cross-reference parts and alternative options found for IKW40N120H3. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IKW40N120H3, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number | Description | Manufacturer | Compare |
---|---|---|---|
IKW30N60H3 | Insulated Gate Bipolar Transistor, 60A I(C), 600V V(BR)CES, N-Channel, TO-247, GREEN, PLASTIC PACKAGE-3 | Infineon Technologies AG | IKW40N120H3 vs IKW30N60H3 |
IHW40N60R | Insulated Gate Bipolar Transistor, 80A I(C), 600V V(BR)CES, N-Channel, TO-247AD, GREEN, PLASTIC, TO-247, 3 PIN | Infineon Technologies AG | IKW40N120H3 vs IHW40N60R |
IHW40N65R5 | Insulated Gate Bipolar Transistor, 80A I(C), 650V V(BR)CES, N-Channel, TO-247, GREEN, PLASTIC PACKAGE-3 | Infineon Technologies AG | IKW40N120H3 vs IHW40N65R5 |