Part Details for IKW50N65ES5 by Infineon Technologies AG
Overview of IKW50N65ES5 by Infineon Technologies AG
- Distributor Offerings: (5 listings)
- Number of FFF Equivalents: (0 crosses)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (9 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Applications
Energy and Power Systems
Renewable Energy
Price & Stock for IKW50N65ES5
| Part # | Distributor | Description | Stock | Price | Buy | |
|---|---|---|---|---|---|---|
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DISTI #
726-IKW50N65ES5
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Mouser Electronics | IGBT Transistors Trenchstop 5 IGBT RoHS: Compliant | 0 |
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$3.6200 / $6.0000 | Order Now |
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DISTI #
IGBT1980
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Rutronik | IGBT 650V 50A 1.35V TO247-3 RoHS: Compliant Min Qty: 30 Package Multiple: 30 Container: Tube |
Stock DE - 1530 Stock HK - 0 Stock US - 0 Stock SG - 0 |
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$3.0100 / $3.7000 | Buy Now |
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LCSC | TO-247-3 IGBTs ROHS | 94 |
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$5.0999 / $7.0231 | Buy Now |
|
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MacroQuest Electronics | STOCK | 21000 |
|
RFQ | |
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Sense Electronic Company Limited | TO-247 | 3000 |
|
RFQ |
Part Details for IKW50N65ES5
IKW50N65ES5 CAD Models
IKW50N65ES5 Part Data Attributes:
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IKW50N65ES5
Infineon Technologies AG
Buy Now
Datasheet
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Compare Parts:
IKW50N65ES5
Infineon Technologies AG
Insulated Gate Bipolar Transistor,
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| Rohs Code | Yes | |
| Part Life Cycle Code | Active | |
| Ihs Manufacturer | INFINEON TECHNOLOGIES AG | |
| Package Description | , | |
| Reach Compliance Code | compliant | |
| ECCN Code | EAR99 | |
| Samacsys Manufacturer | Infineon | |
| Case Connection | COLLECTOR | |
| Collector Current-Max (IC) | 80 A | |
| Collector-Emitter Voltage-Max | 650 V | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| Gate-Emitter Thr Voltage-Max | 4.8 V | |
| Gate-Emitter Voltage-Max | 20 V | |
| JEDEC-95 Code | TO-247 | |
| JESD-30 Code | R-PSFM-T3 | |
| JESD-609 Code | e3 | |
| Number of Elements | 1 | |
| Number of Terminals | 3 | |
| Operating Temperature-Max | 175 °C | |
| Operating Temperature-Min | -40 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | FLANGE MOUNT | |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 274 W | |
| Surface Mount | NO | |
| Terminal Finish | Tin (Sn) | |
| Terminal Form | THROUGH-HOLE | |
| Terminal Position | SINGLE | |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
| Transistor Application | POWER CONTROL | |
| Transistor Element Material | SILICON | |
| Turn-off Time-Nom (toff) | 198 ns | |
| Turn-on Time-Nom (ton) | 45 ns | |
| VCEsat-Max | 1.7 V |
Alternate Parts for IKW50N65ES5
This table gives cross-reference parts and alternative options found for IKW50N65ES5. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IKW50N65ES5, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Description | Manufacturer | Compare |
|---|---|---|---|
| IRG4PSC71KDPBF | Insulated Gate Bipolar Transistor, 85A I(C), 600V V(BR)CES, N-Channel, TO-274AA, | Infineon Technologies AG | IKW50N65ES5 vs IRG4PSC71KDPBF |
| IRG4PSC71UD | Insulated Gate Bipolar Transistor, 85A I(C), 600V V(BR)CES, N-Channel, TO-274AA, LEAD FREE, SUPER-247, 3 PIN | Infineon Technologies AG | IKW50N65ES5 vs IRG4PSC71UD |
| IRG4PSC71KD | Insulated Gate Bipolar Transistor, 85A I(C), 600V V(BR)CES, N-Channel, SUPER-247, 3 PIN | International Rectifier | IKW50N65ES5 vs IRG4PSC71KD |
| IRG4PSC71KDPBF | Insulated Gate Bipolar Transistor, 85A I(C), 600V V(BR)CES, N-Channel, TO-274AA, LEAD FREE, SUPER-247, 3 PIN | International Rectifier | IKW50N65ES5 vs IRG4PSC71KDPBF |
| IKW50N60H3 | Insulated Gate Bipolar Transistor, 100A I(C), 600V V(BR)CES, N-Channel, TO-247, GREEN, PLASTIC PACKAGE-3 | Infineon Technologies AG | IKW50N65ES5 vs IKW50N60H3 |
| IRG4PSC71KD | Insulated Gate Bipolar Transistor, 85A I(C), 600V V(BR)CES, N-Channel, TO-274AA, LEAD FREE, SUPER-247, 3 PIN | Infineon Technologies AG | IKW50N65ES5 vs IRG4PSC71KD |
| IXSX40N60BD1 | Insulated Gate Bipolar Transistor, 75A I(C), 600V V(BR)CES, N-Channel, TO-247, PLUS247, 3 PIN | IXYS Corporation | IKW50N65ES5 vs IXSX40N60BD1 |
| IXSX40N60CD1 | Insulated Gate Bipolar Transistor, 75A I(C), 600V V(BR)CES, N-Channel, PLUS247, 3 PIN | IXYS Corporation | IKW50N65ES5 vs IXSX40N60CD1 |
| IKW50N60H3FKSA1 | Insulated Gate Bipolar Transistor, 100A I(C), 600V V(BR)CES, N-Channel, TO-247, GREEN, PLASTIC PACKAGE-3 | Infineon Technologies AG | IKW50N65ES5 vs IKW50N60H3FKSA1 |