Datasheets
IMBD4448/E9 by: Vishay Semiconductors

Rectifier Diode, 1 Phase, 1 Element, 0.15A, 75V V(RRM), Silicon, TO-236AB,

Part Details for IMBD4448/E9 by Vishay Semiconductors

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Part Details for IMBD4448/E9

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IMBD4448/E9 Part Data Attributes

IMBD4448/E9 Vishay Semiconductors
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IMBD4448/E9 Vishay Semiconductors Rectifier Diode, 1 Phase, 1 Element, 0.15A, 75V V(RRM), Silicon, TO-236AB,
Rohs Code No
Part Life Cycle Code Transferred
Ihs Manufacturer GENERAL SEMICONDUCTOR INC
Reach Compliance Code unknown
Additional Feature FAST SWITCHING
Configuration SINGLE
Diode Element Material SILICON
Diode Type RECTIFIER DIODE
Forward Voltage-Max (VF) 0.72 V
JEDEC-95 Code TO-236AB
JESD-30 Code R-PDSO-G3
JESD-609 Code e0
Non-rep Pk Forward Current-Max 0.5 A
Number of Elements 1
Number of Phases 1
Number of Terminals 3
Operating Temperature-Max 150 °C
Output Current-Max 0.15 A
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Power Dissipation-Max 0.35 W
Qualification Status Not Qualified
Rep Pk Reverse Voltage-Max 75 V
Reverse Recovery Time-Max 0.004 µs
Surface Mount YES
Terminal Finish Tin/Lead (Sn/Pb)
Terminal Form GULL WING
Terminal Position DUAL

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