Part Details for IPA60R650CE by Infineon Technologies AG
Results Overview of IPA60R650CE by Infineon Technologies AG
- Distributor Offerings: (1 listing)
- Number of FFF Equivalents: (0 replacements)
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- Number of Functional Equivalents: (0 options)
- CAD Models: (Request Part)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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Applications
Consumer Electronics
Energy and Power Systems
Renewable Energy
IPA60R650CE Information
IPA60R650CE by Infineon Technologies AG is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Price & Stock for IPA60R650CE
| Part # | Distributor | Description | Stock | Price | Buy | |
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Wuhan P&S | 650V,9.9A,N Channel Power MOSFET Min Qty: 1 | 450 |
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$0.4700 / $0.6600 | Buy Now |
Part Details for IPA60R650CE
IPA60R650CE CAD Models
IPA60R650CE Part Data Attributes
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IPA60R650CE
Infineon Technologies AG
Buy Now
Datasheet
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IPA60R650CE
Infineon Technologies AG
Power Field-Effect Transistor, 600V, 0.65ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220FP, 3 PIN
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| Rohs Code | Yes | |
| Part Life Cycle Code | Not Recommended | |
| Package Description | To-220fp, 3 Pin | |
| Reach Compliance Code | Compliant | |
| ECCN Code | EAR99 | |
| Avalanche Energy Rating (Eas) | 133 Mj | |
| Case Connection | Isolated | |
| Configuration | Single With Built-In Diode | |
| DS Breakdown Voltage-Min | 600 V | |
| Drain-source On Resistance-Max | 0.65 Ω | |
| FET Technology | Metal-Oxide Semiconductor | |
| JEDEC-95 Code | TO-220AB | |
| JESD-30 Code | R-PSFM-T3 | |
| JESD-609 Code | e3 | |
| Number of Elements | 1 | |
| Number of Terminals | 3 | |
| Operating Mode | Enhancement Mode | |
| Operating Temperature-Min | -40 °C | |
| Package Body Material | Plastic/Epoxy | |
| Package Shape | Rectangular | |
| Package Style | Flange Mount | |
| Peak Reflow Temperature (Cel) | Not Specified | |
| Polarity/Channel Type | N-Channel | |
| Pulsed Drain Current-Max (IDM) | 19 A | |
| Surface Mount | No | |
| Terminal Finish | Tin (Sn) | |
| Terminal Form | Through-Hole | |
| Terminal Position | Single | |
| Time@Peak Reflow Temperature-Max (s) | Not Specified | |
| Transistor Application | Switching | |
| Transistor Element Material | Silicon |
IPA60R650CE Frequently Asked Questions (FAQ)
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The maximum junction temperature (Tj) of the IPA60R650CE is 175°C, as specified in the datasheet. However, it's recommended to keep the junction temperature below 150°C for reliable operation and to prevent thermal runaway.
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Proper cooling of the IPA60R650CE is crucial to prevent overheating. Ensure good thermal contact between the device and the heat sink, and use a heat sink with a thermal resistance of less than 1 K/W. Also, consider using a thermal interface material (TIM) to fill any gaps between the device and heat sink.
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The recommended gate resistance (Rg) for the IPA60R650CE is between 10 Ω and 100 Ω. A lower gate resistance can help reduce switching losses, but may also increase the risk of oscillations and electromagnetic interference (EMI).
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Yes, the IPA60R650CE is suitable for high-frequency switching applications up to 100 kHz. However, be aware that high-frequency switching can increase switching losses and reduce the device's overall efficiency. Ensure proper design and layout to minimize parasitic inductances and capacitances.
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To protect the IPA60R650CE from overvoltage and overcurrent, use a suitable voltage regulator and current limiter in your design. Also, consider adding overvoltage protection (OVP) and overcurrent protection (OCP) circuits to prevent damage to the device.