Datasheets
IPAW60R600P7SXKSA1 by: Infineon Technologies AG

Power Field-Effect Transistor, 600V, 0.6ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220FP, 3 PIN

Part Details for IPAW60R600P7SXKSA1 by Infineon Technologies AG

Overview of IPAW60R600P7SXKSA1 by Infineon Technologies AG

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Applications Consumer Electronics Energy and Power Systems Renewable Energy

Price & Stock for IPAW60R600P7SXKSA1

Part # Distributor Description Stock Price Buy
DISTI # 93AC7086
Newark Mosfet, N-Ch, 600V, 6A, 21W, To-220Fp, Transistor Polarity:N Channel, Continuous Drain Current Id:6A, Drain Source Voltage Vds:600V, On Resistance Rds(On):0.49Ohm, Rds(On) Test Voltage Vgs:10V, Threshold Voltage Vgs:3.5V, Power Rohs Compliant: Yes |Infineon IPAW60R600P7SXKSA1 Min Qty: 1 Package Multiple: 1 Date Code: 1 Container: Bulk 0
  • 1 $1.2700
  • 10 $1.0600
  • 100 $0.8390
  • 900 $0.7240
  • 1,350 $0.6040
  • 2,700 $0.5730
  • 10,350 $0.5280
$0.5280 / $1.2700 Buy Now
DISTI # IPAW60R600P7SXKSA1-ND
DigiKey MOSFET N-CH 600V 6A TO220 Min Qty: 1 Lead time: 26 Weeks Container: Tube 1
In Stock
  • 1 $1.0100
$1.0100 Buy Now
DISTI # IPAW60R600P7SXKSA1
Avnet Americas Transistor MOSFET N-CH 600V 6A 3-Pin TO-220FP Tube - Rail/Tube (Alt: IPAW60R600P7SXKSA1) RoHS: Compliant Min Qty: 855 Package Multiple: 45 Container: Tube 0
RFQ
Rochester Electronics IPAW60R600 - 600V CoolMOS N-Channel Power MOSFET RoHS: Compliant Status: Not Recommended for New Designs Min Qty: 1 6738
  • 1 $0.4413
  • 25 $0.4325
  • 100 $0.4148
  • 500 $0.3972
  • 1,000 $0.3751
$0.3751 / $0.4413 Buy Now
DISTI # IPAW60R600P7SXKSA1
Avnet Americas Transistor MOSFET N-CH 600V 6A 3-Pin TO-220FP Tube - Rail/Tube (Alt: IPAW60R600P7SXKSA1) RoHS: Compliant Min Qty: 855 Package Multiple: 45 Container: Tube 0
RFQ
Ameya Holding Limited   Min Qty: 20 1445
  • 20 $1.0328
  • 100 $1.0204
$1.0204 / $1.0328 Buy Now
DISTI # IPAW60R600P7SXKSA1
Avnet Americas Transistor MOSFET N-CH 600V 6A 3-Pin TO-220FP Tube - Rail/Tube (Alt: IPAW60R600P7SXKSA1) RoHS: Compliant Min Qty: 855 Package Multiple: 45 Container: Tube 0
RFQ
DISTI # 2986454
element14 Asia-Pacific MOSFET, N-CH, 600V, 6A, 21W, TO-220FP RoHS: Compliant Min Qty: 1 Container: Each 0
  • 1 $0.9467
  • 10 $0.7779
  • 100 $0.6311
  • 500 $0.5379
  • 1,000 $0.4506
  • 5,000 $0.4227
$0.4227 / $0.9467 Buy Now
DISTI # 2986454
Farnell MOSFET, N-CH, 600V, 6A, 21W, TO-220FP RoHS: Compliant Min Qty: 1 Lead time: 40 Weeks, 1 Days Container: Each 0
  • 1 $1.4611
  • 10 $0.8916
  • 450 $0.7368
  • 900 $0.5482
  • 1,350 $0.5245
  • 2,700 $0.5008
  • 5,400 $0.4920
$0.4920 / $1.4611 Buy Now

Part Details for IPAW60R600P7SXKSA1

IPAW60R600P7SXKSA1 CAD Models

IPAW60R600P7SXKSA1 Part Data Attributes

IPAW60R600P7SXKSA1 Infineon Technologies AG
Buy Now Datasheet
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IPAW60R600P7SXKSA1 Infineon Technologies AG Power Field-Effect Transistor, 600V, 0.6ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220FP, 3 PIN
Rohs Code Yes
Part Life Cycle Code Obsolete
Ihs Manufacturer INFINEON TECHNOLOGIES AG
Package Description FLANGE MOUNT, R-PSFM-T3
Reach Compliance Code compliant
ECCN Code EAR99
Samacsys Manufacturer Infineon
Avalanche Energy Rating (Eas) 17 mJ
Case Connection ISOLATED
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 600 V
Drain-source On Resistance-Max 0.6 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code TO-220AB
JESD-30 Code R-PSFM-T3
JESD-609 Code e3
Number of Elements 1
Number of Terminals 3
Operating Mode ENHANCEMENT MODE
Operating Temperature-Min -40 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style FLANGE MOUNT
Peak Reflow Temperature (Cel) NOT SPECIFIED
Polarity/Channel Type N-CHANNEL
Pulsed Drain Current-Max (IDM) 16 A
Surface Mount NO
Terminal Finish Tin (Sn)
Terminal Form THROUGH-HOLE
Terminal Position SINGLE
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Transistor Application SWITCHING
Transistor Element Material SILICON

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