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Power Field-Effect Transistor, 600V, 0.6ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220FP, 3 PIN
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
93AC7086
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Newark | Mosfet, N-Ch, 600V, 6A, 21W, To-220Fp, Transistor Polarity:N Channel, Continuous Drain Current Id:6A, Drain Source Voltage Vds:600V, On Resistance Rds(On):0.49Ohm, Rds(On) Test Voltage Vgs:10V, Threshold Voltage Vgs:3.5V, Power Rohs Compliant: Yes |Infineon IPAW60R600P7SXKSA1 Min Qty: 1 Package Multiple: 1 Date Code: 1 Container: Bulk | 0 |
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$0.5280 / $1.2700 | Buy Now |
DISTI #
IPAW60R600P7SXKSA1-ND
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DigiKey | MOSFET N-CH 600V 6A TO220 Min Qty: 1 Lead time: 26 Weeks Container: Tube |
1 In Stock |
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$1.0100 | Buy Now |
DISTI #
IPAW60R600P7SXKSA1
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Avnet Americas | Transistor MOSFET N-CH 600V 6A 3-Pin TO-220FP Tube - Rail/Tube (Alt: IPAW60R600P7SXKSA1) RoHS: Compliant Min Qty: 855 Package Multiple: 45 Container: Tube | 0 |
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RFQ | |
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Rochester Electronics | IPAW60R600 - 600V CoolMOS N-Channel Power MOSFET RoHS: Compliant Status: Not Recommended for New Designs Min Qty: 1 | 6738 |
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$0.3751 / $0.4413 | Buy Now |
DISTI #
IPAW60R600P7SXKSA1
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Avnet Americas | Transistor MOSFET N-CH 600V 6A 3-Pin TO-220FP Tube - Rail/Tube (Alt: IPAW60R600P7SXKSA1) RoHS: Compliant Min Qty: 855 Package Multiple: 45 Container: Tube | 0 |
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RFQ | |
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Ameya Holding Limited | Min Qty: 20 | 1445 |
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$1.0204 / $1.0328 | Buy Now |
DISTI #
IPAW60R600P7SXKSA1
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Avnet Americas | Transistor MOSFET N-CH 600V 6A 3-Pin TO-220FP Tube - Rail/Tube (Alt: IPAW60R600P7SXKSA1) RoHS: Compliant Min Qty: 855 Package Multiple: 45 Container: Tube | 0 |
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RFQ | |
DISTI #
2986454
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element14 Asia-Pacific | MOSFET, N-CH, 600V, 6A, 21W, TO-220FP RoHS: Compliant Min Qty: 1 Container: Each | 0 |
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$0.4227 / $0.9467 | Buy Now |
DISTI #
2986454
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Farnell | MOSFET, N-CH, 600V, 6A, 21W, TO-220FP RoHS: Compliant Min Qty: 1 Lead time: 40 Weeks, 1 Days Container: Each | 0 |
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$0.4920 / $1.4611 | Buy Now |
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IPAW60R600P7SXKSA1
Infineon Technologies AG
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Datasheet
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IPAW60R600P7SXKSA1
Infineon Technologies AG
Power Field-Effect Transistor, 600V, 0.6ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220FP, 3 PIN
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Rohs Code | Yes | |
Part Life Cycle Code | Obsolete | |
Ihs Manufacturer | INFINEON TECHNOLOGIES AG | |
Package Description | FLANGE MOUNT, R-PSFM-T3 | |
Reach Compliance Code | compliant | |
ECCN Code | EAR99 | |
Samacsys Manufacturer | Infineon | |
Avalanche Energy Rating (Eas) | 17 mJ | |
Case Connection | ISOLATED | |
Configuration | SINGLE WITH BUILT-IN DIODE | |
DS Breakdown Voltage-Min | 600 V | |
Drain-source On Resistance-Max | 0.6 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
JEDEC-95 Code | TO-220AB | |
JESD-30 Code | R-PSFM-T3 | |
JESD-609 Code | e3 | |
Number of Elements | 1 | |
Number of Terminals | 3 | |
Operating Mode | ENHANCEMENT MODE | |
Operating Temperature-Min | -40 °C | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | FLANGE MOUNT | |
Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
Polarity/Channel Type | N-CHANNEL | |
Pulsed Drain Current-Max (IDM) | 16 A | |
Surface Mount | NO | |
Terminal Finish | Tin (Sn) | |
Terminal Form | THROUGH-HOLE | |
Terminal Position | SINGLE | |
Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
Transistor Application | SWITCHING | |
Transistor Element Material | SILICON |