Part Details for IPB10N03L by Infineon Technologies AG
Overview of IPB10N03L by Infineon Technologies AG
- Distributor Offerings: (4 listings)
- Number of FFF Equivalents: (0 crosses)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Price & Stock for IPB10N03L
Part # | Distributor | Description | Stock | Price | Buy | |
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Bristol Electronics | Min Qty: 3 | 300 |
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$0.5400 / $1.6875 | Buy Now |
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Quest Components | MOSFET Transistor, N-Channel, TO-263AB | 240 |
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$0.6750 / $2.2500 | Buy Now |
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Quest Components | MOSFET Transistor, N-Channel, TO-263AB | 4000 |
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$0.5550 / $1.8500 | Buy Now |
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Velocity Electronics | Our Stock | 26458 |
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RFQ |
Part Details for IPB10N03L
IPB10N03L CAD Models
IPB10N03L Part Data Attributes:
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IPB10N03L
Infineon Technologies AG
Buy Now
Datasheet
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Compare Parts:
IPB10N03L
Infineon Technologies AG
Power Field-Effect Transistor, 73A I(D), 30V, 0.0131ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, PLASTIC, TO-263, 3 PIN
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Rohs Code | No | |
Part Life Cycle Code | Obsolete | |
Ihs Manufacturer | INFINEON TECHNOLOGIES AG | |
Part Package Code | D2PAK | |
Package Description | PLASTIC, TO-263, 3 PIN | |
Pin Count | 4 | |
Reach Compliance Code | not_compliant | |
ECCN Code | EAR99 | |
Additional Feature | AVALANCHE RATED, LOGIC LEVEL COMPATIBLE | |
Avalanche Energy Rating (Eas) | 25 mJ | |
Case Connection | DRAIN | |
Configuration | SINGLE WITH BUILT-IN DIODE | |
DS Breakdown Voltage-Min | 30 V | |
Drain Current-Max (ID) | 73 A | |
Drain-source On Resistance-Max | 0.0131 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
JEDEC-95 Code | TO-263AB | |
JESD-30 Code | R-PSSO-G2 | |
JESD-609 Code | e0 | |
Number of Elements | 1 | |
Number of Terminals | 2 | |
Operating Mode | ENHANCEMENT MODE | |
Operating Temperature-Max | 175 °C | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | SMALL OUTLINE | |
Peak Reflow Temperature (Cel) | 220 | |
Polarity/Channel Type | N-CHANNEL | |
Power Dissipation-Max (Abs) | 90 W | |
Pulsed Drain Current-Max (IDM) | 292 A | |
Qualification Status | Not Qualified | |
Surface Mount | YES | |
Terminal Finish | TIN LEAD | |
Terminal Form | GULL WING | |
Terminal Position | SINGLE | |
Transistor Application | SWITCHING | |
Transistor Element Material | SILICON |
Alternate Parts for IPB10N03L
This table gives cross-reference parts and alternative options found for IPB10N03L. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IPB10N03L, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number | Description | Manufacturer | Compare |
---|---|---|---|
934057024118 | 75A, 30V, 0.0152ohm, N-CHANNEL, Si, POWER, MOSFET, PLASTIC, SMD, D2PAK-3 | NXP Semiconductors | IPB10N03L vs 934057024118 |
STD3NA50T4 | 2.7A, 500V, 3ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252AA, DPAK-3 | STMicroelectronics | IPB10N03L vs STD3NA50T4 |
IXFH68N20 | Power Field-Effect Transistor, 68A I(D), 200V, 0.035ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AD, | IXYS Corporation | IPB10N03L vs IXFH68N20 |
IRF620B | Power Field-Effect Transistor, 5A I(D), 200V, 0.8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN | Fairchild Semiconductor Corporation | IPB10N03L vs IRF620B |
SPA16N50C3 | Power Field-Effect Transistor, 16A I(D), 500V, 0.28ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, GREEN, PLASTIC, TO-220FP, 3 PIN | Infineon Technologies AG | IPB10N03L vs SPA16N50C3 |
STD7NK30Z | 5A, 300V, 0.9ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252AA, ROHS COMPLIANT, DPAK-3 | STMicroelectronics | IPB10N03L vs STD7NK30Z |
IXFH32N50Q | Power Field-Effect Transistor, 32A I(D), 500V, 0.16ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AD, TO-247, 3 PIN | IXYS Corporation | IPB10N03L vs IXFH32N50Q |
IPD06N03LBG | Power Field-Effect Transistor, 50A I(D), 30V, 0.0061ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, ROHS COMPLIANT, PLASTIC, TO-252, 3 PIN | Infineon Technologies AG | IPB10N03L vs IPD06N03LBG |
NP90N055VUG-E1-AY | Power MOSFETs for Automotive, MP-3ZP, /Embossed Tape | Renesas Electronics Corporation | IPB10N03L vs NP90N055VUG-E1-AY |
BUK9614-30 | 69A, 30V, 0.014ohm, N-CHANNEL, Si, POWER, MOSFET | NXP Semiconductors | IPB10N03L vs BUK9614-30 |