Part Details for IPB60R199CP by Infineon Technologies AG
Overview of IPB60R199CP by Infineon Technologies AG
- Distributor Offerings: (5 listings)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (0 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Price & Stock for IPB60R199CP
Part # | Distributor | Description | Stock | Price | Buy | |
---|---|---|---|---|---|---|
DISTI #
23AK3485
|
Newark | Power Field-Effect Transistor, 16A I(D), 600V, 0.199Ohm, 1-Element, N-Channel, Silicon, Metal-Oxide Semiconductor Fet, To-263Ab |Infineon IPB60R199CP RoHS: Not Compliant Min Qty: 1 Package Multiple: 1 Date Code: 0 Container: Bulk | 0 |
|
$2.9600 / $5.7200 | Buy Now |
DISTI #
726-IPB60R199CP
|
Mouser Electronics | MOSFETs N-Ch 650V 16A D2PAK-2 CoolMOS CP RoHS: Compliant | 0 |
|
$1.9400 / $3.9800 | Order Now |
|
Onlinecomponents.com | RoHS: Compliant |
788 Partner Stock |
|
$2.4100 / $2.8300 | Buy Now |
DISTI #
C1S322000989520
|
Chip1Stop | MOSFET RoHS: Compliant | 788 |
|
$2.7700 / $3.2200 | Buy Now |
|
Win Source Electronics | MOSFET N-CH 650V 16A TO-263 | 4521 |
|
$1.8840 / $2.8260 | Buy Now |
Part Details for IPB60R199CP
IPB60R199CP CAD Models
IPB60R199CP Part Data Attributes
|
IPB60R199CP
Infineon Technologies AG
Buy Now
Datasheet
|
Compare Parts:
IPB60R199CP
Infineon Technologies AG
Power Field-Effect Transistor, 16A I(D), 600V, 0.199ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, GREEN, PLASTIC, TO-263, 3 PIN
|
Pbfree Code | Yes | |
Rohs Code | Yes | |
Part Life Cycle Code | Not Recommended | |
Ihs Manufacturer | INFINEON TECHNOLOGIES AG | |
Part Package Code | D2PAK | |
Package Description | SMALL OUTLINE, R-PSSO-G2 | |
Pin Count | 4 | |
Reach Compliance Code | not_compliant | |
ECCN Code | EAR99 | |
Samacsys Manufacturer | Infineon | |
Avalanche Energy Rating (Eas) | 436 mJ | |
Case Connection | DRAIN | |
Configuration | SINGLE WITH BUILT-IN DIODE | |
DS Breakdown Voltage-Min | 600 V | |
Drain Current-Max (ID) | 16 A | |
Drain-source On Resistance-Max | 0.199 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
JEDEC-95 Code | TO-263AB | |
JESD-30 Code | R-PSSO-G2 | |
JESD-609 Code | e3 | |
Moisture Sensitivity Level | 1 | |
Number of Elements | 1 | |
Number of Terminals | 2 | |
Operating Mode | ENHANCEMENT MODE | |
Operating Temperature-Max | 150 °C | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | SMALL OUTLINE | |
Peak Reflow Temperature (Cel) | 245 | |
Polarity/Channel Type | N-CHANNEL | |
Power Dissipation-Max (Abs) | 139 W | |
Pulsed Drain Current-Max (IDM) | 51 A | |
Qualification Status | Not Qualified | |
Surface Mount | YES | |
Terminal Finish | Tin (Sn) | |
Terminal Form | GULL WING | |
Terminal Position | SINGLE | |
Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
Transistor Application | SWITCHING | |
Transistor Element Material | SILICON |