There are no models available for this part yet.
Overview of IPB60R199CP by Infineon Technologies AG
Note: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
- Distributor Offerings: ( 5 listings )
- Number of FFF Equivalents: ( 0 replacements )
- CAD Models: ( Request Part )
- Number of Functional Equivalents: ( 0 options )
- Part Data Attributes ( Available )
- Reference Designs: ( Not Available )
Price & Stock for IPB60R199CP by Infineon Technologies AG
Part # | Manufacturer | Description | Stock | Price | Buy | ||
---|---|---|---|---|---|---|---|
DISTI #
23AK3485
|
Newark | Power Field-Effect Transistor, 16A I(D), 600V, 0.199Ohm, 1-Element, N-Channel, Silicon, Metal-Oxide Semiconductor Fet, To-263Ab |Infineon IPB60R199CP RoHS: Not Compliant Min Qty: 1 Package Multiple: 1 Date Code: 0 Container: Bulk | 0 |
|
$2.9600 / $5.7200 | Buy Now | |
DISTI #
726-IPB60R199CP
|
Mouser Electronics | MOSFETs N-Ch 650V 16A D2PAK-2 CoolMOS CP RoHS: Compliant | 0 |
|
$1.9400 / $3.9800 | Order Now | |
Onlinecomponents.com | RoHS: Compliant |
788 Partner Stock |
|
$2.4100 / $2.8300 | Buy Now | ||
DISTI #
C1S322000989520
|
Chip1Stop | MOSFET RoHS: Compliant | 788 |
|
$2.7700 / $3.2200 | Buy Now | |
Win Source Electronics | MOSFET N-CH 650V 16A TO-263 | 4521 |
|
$1.8840 / $2.8260 | Buy Now |
CAD Models for IPB60R199CP by Infineon Technologies AG
Part Data Attributes for IPB60R199CP by Infineon Technologies AG
|
|
---|---|
Pbfree Code
|
Yes
|
Rohs Code
|
Yes
|
Part Life Cycle Code
|
Not Recommended
|
Ihs Manufacturer
|
INFINEON TECHNOLOGIES AG
|
Part Package Code
|
D2PAK
|
Package Description
|
SMALL OUTLINE, R-PSSO-G2
|
Pin Count
|
4
|
Reach Compliance Code
|
not_compliant
|
ECCN Code
|
EAR99
|
Samacsys Manufacturer
|
Infineon
|
Avalanche Energy Rating (Eas)
|
436 mJ
|
Case Connection
|
DRAIN
|
Configuration
|
SINGLE WITH BUILT-IN DIODE
|
DS Breakdown Voltage-Min
|
600 V
|
Drain Current-Max (ID)
|
16 A
|
Drain-source On Resistance-Max
|
0.199 Ω
|
FET Technology
|
METAL-OXIDE SEMICONDUCTOR
|
JEDEC-95 Code
|
TO-263AB
|
JESD-30 Code
|
R-PSSO-G2
|
JESD-609 Code
|
e3
|
Moisture Sensitivity Level
|
1
|
Number of Elements
|
1
|
Number of Terminals
|
2
|
Operating Mode
|
ENHANCEMENT MODE
|
Operating Temperature-Max
|
150 °C
|
Package Body Material
|
PLASTIC/EPOXY
|
Package Shape
|
RECTANGULAR
|
Package Style
|
SMALL OUTLINE
|
Peak Reflow Temperature (Cel)
|
245
|
Polarity/Channel Type
|
N-CHANNEL
|
Power Dissipation-Max (Abs)
|
139 W
|
Pulsed Drain Current-Max (IDM)
|
51 A
|
Qualification Status
|
Not Qualified
|
Surface Mount
|
YES
|
Terminal Finish
|
Tin (Sn)
|
Terminal Form
|
GULL WING
|
Terminal Position
|
SINGLE
|
Time@Peak Reflow Temperature-Max (s)
|
NOT SPECIFIED
|
Transistor Application
|
SWITCHING
|
Transistor Element Material
|
SILICON
|
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