Part Details for IPB60R199CPAXT by Infineon Technologies AG
Overview of IPB60R199CPAXT by Infineon Technologies AG
- Distributor Offerings: (1 listing)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (6 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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Price & Stock for IPB60R199CPAXT
Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
IPB60R199CPAATMA1
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Avnet Americas | Trans MOSFET N-CH 600V 16A 3-Pin(2+Tab) TO-263 - Tape and Reel (Alt: IPB60R199CPAATMA1) RoHS: Compliant Min Qty: 1000 Package Multiple: 1000 Container: Reel | 0 |
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RFQ |
Part Details for IPB60R199CPAXT
IPB60R199CPAXT CAD Models
IPB60R199CPAXT Part Data Attributes
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IPB60R199CPAXT
Infineon Technologies AG
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Datasheet
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IPB60R199CPAXT
Infineon Technologies AG
Power Field-Effect Transistor, 16A I(D), 600V, 0.199ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, TO-263, 3 PIN
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Rohs Code | Yes | |
Part Life Cycle Code | Active | |
Ihs Manufacturer | INFINEON TECHNOLOGIES AG | |
Package Description | SMALL OUTLINE, R-PSSO-G2 | |
Reach Compliance Code | compliant | |
ECCN Code | EAR99 | |
Avalanche Energy Rating (Eas) | 436 mJ | |
Case Connection | DRAIN | |
Configuration | SINGLE WITH BUILT-IN DIODE | |
DS Breakdown Voltage-Min | 600 V | |
Drain Current-Max (ID) | 16 A | |
Drain-source On Resistance-Max | 0.199 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
JEDEC-95 Code | TO-263AB | |
JESD-30 Code | R-PSSO-G2 | |
Number of Elements | 1 | |
Number of Terminals | 2 | |
Operating Mode | ENHANCEMENT MODE | |
Operating Temperature-Max | 175 °C | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | SMALL OUTLINE | |
Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
Polarity/Channel Type | N-CHANNEL | |
Pulsed Drain Current-Max (IDM) | 51 A | |
Surface Mount | YES | |
Terminal Form | GULL WING | |
Terminal Position | SINGLE | |
Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
Transistor Application | SWITCHING | |
Transistor Element Material | SILICON |
Alternate Parts for IPB60R199CPAXT
This table gives cross-reference parts and alternative options found for IPB60R199CPAXT. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IPB60R199CPAXT, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number | Description | Manufacturer | Compare |
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IPB60R199CPATMA1 | Power Field-Effect Transistor, 16A I(D), 600V, 0.199ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, GREEN, PLASTIC, TO-263, 3 PIN | Infineon Technologies AG | IPB60R199CPAXT vs IPB60R199CPATMA1 |
IPB60R199CPXT | Power Field-Effect Transistor, 16A I(D), 600V, 0.199ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, GREEN, PLASTIC, TO-263, 3 PIN | Infineon Technologies AG | IPB60R199CPAXT vs IPB60R199CPXT |
TK16N60W | TRANSISTOR POWER, FET, FET General Purpose Power | Toshiba America Electronic Components | IPB60R199CPAXT vs TK16N60W |
IPB60R199CPA | Power Field-Effect Transistor, 16A I(D), 600V, 0.199ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, TO-263, 3 PIN | Infineon Technologies AG | IPB60R199CPAXT vs IPB60R199CPA |
TK16G60W | Nch 500V<VDSS≤700V | Toshiba America Electronic Components | IPB60R199CPAXT vs TK16G60W |
IPB60R199CPAATMA1 | Power Field-Effect Transistor, 16A I(D), 600V, 0.199ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, GREEN, PLASTIC, TO-263, 3 PIN | Infineon Technologies AG | IPB60R199CPAXT vs IPB60R199CPAATMA1 |