| Part # | Manufacturer | Description | Stock | Price | Buy | ||
|---|---|---|---|---|---|---|---|
| Bristol Electronics | Min Qty: 2 | 85 |
|
$2.2999 / $4.9280 | Buy Now | ||
| Quest Components | POWER FIELD-EFFECT TRANSISTOR, 17.5A I(D), 650V, 0.19OHM, 1-ELEMENT, N-CHANNEL, SILICON, METAL-OXIDE SEMICONDUCTOR FET, TO-263AB | 68 |
|
$3.0800 / $6.6000 | Buy Now | ||
| Win Source Electronics | Trans MOSFET N-CH 650V 17.5A 3-Pin(2+Tab) D2PAK T/R / MOSFET N-CH 650V 17.5A TO263 | 32340 |
|
$5.2760 / $7.9130 | Buy Now |
|
|
|
|---|---|
|
Pbfree Code
|
No
|
|
Rohs Code
|
Yes
|
|
Part Life Cycle Code
|
Active
|
|
Ihs Manufacturer
|
INFINEON TECHNOLOGIES AG
|
|
Part Package Code
|
D2PAK
|
|
Package Description
|
TO-263, D2PAK-3/2
|
|
Pin Count
|
4
|
|
Reach Compliance Code
|
not_compliant
|
|
ECCN Code
|
EAR99
|
|
Factory Lead Time
|
52 Weeks
|
|
Samacsys Manufacturer
|
Infineon
|
|
Avalanche Energy Rating (Eas)
|
484 mJ
|
|
Case Connection
|
DRAIN
|
|
Configuration
|
SINGLE WITH BUILT-IN DIODE
|
|
DS Breakdown Voltage-Min
|
650 V
|
|
Drain Current-Max (ID)
|
17.5 A
|
|
Drain-source On Resistance-Max
|
0.19 Ω
|
|
FET Technology
|
METAL-OXIDE SEMICONDUCTOR
|
|
JEDEC-95 Code
|
TO-263AB
|
|
JESD-30 Code
|
R-PSSO-G2
|
|
JESD-609 Code
|
e3
|
|
Moisture Sensitivity Level
|
1
|
|
Number of Elements
|
1
|
|
Number of Terminals
|
2
|
|
Operating Mode
|
ENHANCEMENT MODE
|
|
Operating Temperature-Max
|
150 °C
|
|
Operating Temperature-Min
|
-55 °C
|
|
Package Body Material
|
PLASTIC/EPOXY
|
|
Package Shape
|
RECTANGULAR
|
|
Package Style
|
SMALL OUTLINE
|
|
Peak Reflow Temperature (Cel)
|
NOT SPECIFIED
|
|
Polarity/Channel Type
|
N-CHANNEL
|
|
Pulsed Drain Current-Max (IDM)
|
57.2 A
|
|
Qualification Status
|
Not Qualified
|
|
Surface Mount
|
YES
|
|
Terminal Finish
|
Tin (Sn)
|
|
Terminal Form
|
GULL WING
|
|
Terminal Position
|
SINGLE
|
|
Time@Peak Reflow Temperature-Max (s)
|
NOT SPECIFIED
|
|
Transistor Application
|
SWITCHING
|
|
Transistor Element Material
|
SILICON
|
| Part Number | Description | Manufacturer | Compare |
|---|---|---|---|
| IPB65R190CFDATMA2 | Power Field-Effect Transistor, TO-263, D2PAK-3 | Infineon Technologies AG | IPB65R190CFD vs IPB65R190CFDATMA2 |
| IPB65R190CFDATMA1 | Power Field-Effect Transistor, 17.5A I(D), 650V, 0.19ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, GREEN, PLASTIC, TO-263, D2PAK-3 | Infineon Technologies AG | IPB65R190CFD vs IPB65R190CFDATMA1 |
| IPB65R190CFDAATMA1 | Power Field-Effect Transistor, 17.5A I(D), 650V, 0.19ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, GREEN, PLASTIC, TO-263, D2PAK-3/2 | Infineon Technologies AG | IPB65R190CFD vs IPB65R190CFDAATMA1 |
| IPB65R190CFDA | Power Field-Effect Transistor, 17.5A I(D), 650V, 0.19ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, GREEN, PLASTIC, TO-263, D2PAK-3/2 | Infineon Technologies AG | IPB65R190CFD vs IPB65R190CFDA |
