Part Details for IPB80N08S207ATMA1 by Infineon Technologies AG
Overview of IPB80N08S207ATMA1 by Infineon Technologies AG
- Distributor Offerings: (6 listings)
- Number of FFF Equivalents: (0 crosses)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (4 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Price & Stock for IPB80N08S207ATMA1
Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
49AC0286
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Newark | Mosfet, N-Ch, 75V, 80A, To-263, Channel Type:N Channel, Drain Source Voltage Vds:75V, Continuous Drain Current Id:80A, Transistor Mounting:Surface Mount, Rds(On) Test Voltage:10V, Gate Source Threshold Voltage Max:3V Rohs Compliant: Yes |Infineon IPB80N08S207ATMA1 Min Qty: 1 Package Multiple: 1 Date Code: 0 Container: Cut Tape | 101 |
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$0.5610 | Buy Now |
DISTI #
448-IPB80N08S207ATMA1CT-ND
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DigiKey | MOSFET N-CH 75V 80A TO263-3 Min Qty: 1 Lead time: 12 Weeks Container: Cut Tape (CT), Digi-Reel®, Tape & Reel (TR) |
420 In Stock |
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$2.2994 / $4.7200 | Buy Now |
DISTI #
49AC0286
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Avnet Americas | Trans MOSFET N-CH 75V 80A 3-Pin TO-263 T/R - Product that comes on tape, but is not reeled (Alt: 49AC0286) RoHS: Not Compliant Min Qty: 1 Package Multiple: 1 Lead time: 17 Weeks, 3 Days Container: Ammo Pack | 101 Partner Stock |
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$3.3400 / $4.9100 | Buy Now |
DISTI #
IPB80N08S207ATMA1
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Avnet Americas | Trans MOSFET N-CH 75V 80A 3-Pin(2+Tab) TO-263 - Tape and Reel (Alt: IPB80N08S207ATMA1) RoHS: Compliant Min Qty: 1000 Package Multiple: 1000 Lead time: 12 Weeks, 0 Days Container: Reel | 0 |
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$2.7354 | Buy Now |
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Rochester Electronics | IPB80N08S2 - OptiMOS 75V, N-Channel Power MOSFET RoHS: Compliant Status: Active Min Qty: 1 | 694 |
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$2.1900 / $2.5700 | Buy Now |
DISTI #
SP000219048
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EBV Elektronik | Trans MOSFET N-CH 75V 80A 3-Pin TO-263 T/R (Alt: SP000219048) RoHS: Compliant Min Qty: 1000 Package Multiple: 1000 Lead time: 13 Weeks, 0 Days | EBV - 0 |
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Buy Now |
Part Details for IPB80N08S207ATMA1
IPB80N08S207ATMA1 CAD Models
IPB80N08S207ATMA1 Part Data Attributes
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IPB80N08S207ATMA1
Infineon Technologies AG
Buy Now
Datasheet
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Compare Parts:
IPB80N08S207ATMA1
Infineon Technologies AG
Power Field-Effect Transistor, 80A I(D), 75V, 0.0071ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, GREEN, PLASTIC, TO-263, 3 PIN
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Rohs Code | Yes | |
Part Life Cycle Code | Active | |
Ihs Manufacturer | INFINEON TECHNOLOGIES AG | |
Package Description | SMALL OUTLINE, R-PSSO-G2 | |
Reach Compliance Code | not_compliant | |
ECCN Code | EAR99 | |
Factory Lead Time | 17 Weeks, 3 Days | |
Samacsys Manufacturer | Infineon | |
Avalanche Energy Rating (Eas) | 810 mJ | |
Case Connection | DRAIN | |
Configuration | SINGLE WITH BUILT-IN DIODE | |
DS Breakdown Voltage-Min | 75 V | |
Drain Current-Max (ID) | 80 A | |
Drain-source On Resistance-Max | 0.0071 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
JEDEC-95 Code | TO-263AB | |
JESD-30 Code | R-PSSO-G2 | |
JESD-609 Code | e3 | |
Moisture Sensitivity Level | 1 | |
Number of Elements | 1 | |
Number of Terminals | 2 | |
Operating Mode | ENHANCEMENT MODE | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | SMALL OUTLINE | |
Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
Polarity/Channel Type | N-CHANNEL | |
Pulsed Drain Current-Max (IDM) | 320 A | |
Surface Mount | YES | |
Terminal Finish | Tin (Sn) | |
Terminal Form | GULL WING | |
Terminal Position | SINGLE | |
Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
Transistor Element Material | SILICON |
Alternate Parts for IPB80N08S207ATMA1
This table gives cross-reference parts and alternative options found for IPB80N08S207ATMA1. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IPB80N08S207ATMA1, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number | Description | Manufacturer | Compare |
---|---|---|---|
SSF6808D | Power Field-Effect Transistor, 79A I(D), 68V, 0.008ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, ROHS COMPLIANT, DPAK-3/2 | Suzhou Good-Ark Electronics Co Ltd | IPB80N08S207ATMA1 vs SSF6808D |
IRF1607 | Power Field-Effect Transistor, 75A I(D), 75V, 0.0075ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, PLASTIC PACKAGE-3 | Infineon Technologies AG | IPB80N08S207ATMA1 vs IRF1607 |
IPB80N08S207XT | Power Field-Effect Transistor, 80A I(D), 75V, 0.0071ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, GREEN, PLASTIC, TO-263, 3 PIN | Infineon Technologies AG | IPB80N08S207ATMA1 vs IPB80N08S207XT |
IRF1407LPBF | Power Field-Effect Transistor, 75A I(D), 75V, 0.0078ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA, TO-262, 3 PIN | Infineon Technologies AG | IPB80N08S207ATMA1 vs IRF1407LPBF |