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IPD096N08N3GATMA1 by: Infineon Technologies AG

Power Field-Effect Transistor, 73A I(D), 80V, 0.0096ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, GREEN, PLASTIC PACKAGE-3

Part Details for IPD096N08N3GATMA1 by Infineon Technologies AG

Results Overview of IPD096N08N3GATMA1 by Infineon Technologies AG

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IPD096N08N3GATMA1 Information

IPD096N08N3GATMA1 by Infineon Technologies AG is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.

A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.

Price & Stock for IPD096N08N3GATMA1

Part # Distributor Description Stock Price Buy
DISTI # 34AC1666
Newark Mosfet, N-Ch, 80V, 73A, 175Deg C, 100W, Channel Type:N Channel, Drain Source Voltage Vds:80V, Continuous Drain Current Id:73A, Transistor Mounting:Surface Mount, Rds(On) Test Voltage:10V, Gate Source Threshold Voltage Max:2.8V Rohs Compliant: Yes |Infineon IPD096N08N3GATMA1 RoHS: Compliant Min Qty: 1 Package Multiple: 1 Date Code: 0 Container: Cut Tape 89
  • 1 $0.1840
  • 10 $0.1840
  • 25 $0.1840
  • 50 $0.1840
  • 100 $0.1840
  • 250 $0.1840
  • 500 $0.1840
  • 1,000 $0.1840
$0.1840 Buy Now
DISTI # 34AC1666
Avnet Americas Trans MOSFET N 80V 73A 3-Pin TO-252 T/R - Product that comes on tape, but is not reeled (Alt: 34AC1666) COO: Malaysia RoHS: Compliant Min Qty: 1 Package Multiple: 1 Container: Ammo Pack 139 Partner Stock
  • 1 $1.6700
  • 10 $0.9760
  • 25 $0.8980
  • 50 $0.8200
  • 100 $0.7420
  • 250 $0.6900
  • 500 $0.6380
$0.6380 / $1.6700 Buy Now
DISTI # IPD096N08N3GATMA1
Avnet Americas Trans MOSFET N 80V 73A 3-Pin TO-252 T/R - Tape and Reel (Alt: IPD096N08N3GATMA1) COO: Malaysia RoHS: Compliant Min Qty: 2500 Package Multiple: 2500 Lead time: 26 Weeks, 0 Days Container: Reel 0
  • 2,500 $0.3955
  • 5,000 $0.3890
  • 10,000 $0.3826
  • 15,000 $0.3762
  • 20,000 $0.3697
$0.3697 / $0.3955 Buy Now
Rochester Electronics IPD096N08N3 G - OptiMOS 3 Power-Transistor RoHS: Compliant Status: Not Recommended for New Designs Min Qty: 1 3057
  • 100 $0.6579
  • 500 $0.5921
  • 1,000 $0.5461
  • 10,000 $0.4868
  • 100,000 $0.4079
$0.4079 / $0.6579 Buy Now
DISTI # IPD096N08N3GATMA-0
TME Transistor: N-MOSFET, N, 80V, 73A, 100W, DPAK,TO252, SMT Min Qty: 2500 5000
  • 2,500 $0.4503
$0.4503 Buy Now
Chip Stock 04020.22uF10V±10%ToleranceX7RSMTMultilayerCeramicCapacitor 46500
RFQ
DISTI # SP001127826
EBV Elektronik Trans MOSFET N 80V 73A 3Pin TO252 TR (Alt: SP001127826) RoHS: Compliant Min Qty: 2500 Package Multiple: 2500 Lead time: 27 Weeks, 0 Days EBV - 0
Buy Now
LCSC 80V 73A 100W 3.5V46uA 1 N-Channel TO-252 Single FETs MOSFETs RoHS 4
  • 1 $1.2514
  • 10 $1.0351
  • 30 $0.9171
  • 100 $0.7821
  • 500 $0.7238
  • 1,000 $0.6962
$0.6962 / $1.2514 Buy Now
Win Source Electronics MOSFET N-CH 80V 73A TO252-3 42140
  • 45 $1.3433
  • 95 $1.2566
  • 145 $1.2134
  • 210 $1.1267
  • 270 $1.0834
  • 335 $1.0400
$1.0400 / $1.3433 Buy Now

Part Details for IPD096N08N3GATMA1

IPD096N08N3GATMA1 CAD Models

  • Part Symbol

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  • Footprint

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  • 3D Model

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IPD096N08N3GATMA1 Part Data Attributes

Parametric Data
IPD096N08N3GATMA1 Infineon Technologies AG
Buy Now Datasheet
Compare Parts:
IPD096N08N3GATMA1 Infineon Technologies AG Power Field-Effect Transistor, 73A I(D), 80V, 0.0096ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, GREEN, PLASTIC PACKAGE-3
Pbfree Code Yes
Rohs Code Yes
Part Life Cycle Code Not Recommended
Package Description Green, Plastic Package-3
Reach Compliance Code Not Compliant
ECCN Code EAR99
Avalanche Energy Rating (Eas) 90 Mj
Case Connection Drain
Configuration Single With Built-In Diode
DS Breakdown Voltage-Min 80 V
Drain Current-Max (ID) 73 A
Drain-source On Resistance-Max 0.0096 Ω
FET Technology Metal-Oxide Semiconductor
JEDEC-95 Code TO-252
JESD-30 Code R-PSSO-G2
JESD-609 Code e3
Moisture Sensitivity Level 1
Number of Elements 1
Number of Terminals 2
Operating Mode Enhancement Mode
Operating Temperature-Max 175 °C
Package Body Material Plastic/Epoxy
Package Shape Rectangular
Package Style Small Outline
Polarity/Channel Type N-Channel
Pulsed Drain Current-Max (IDM) 292 A
Surface Mount Yes
Terminal Finish Tin (Sn)
Terminal Form Gull Wing
Terminal Position Single
Transistor Application Switching
Transistor Element Material Silicon

Alternate Parts for IPD096N08N3GATMA1

This table gives cross-reference parts and alternative options found for IPD096N08N3GATMA1. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IPD096N08N3GATMA1, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Manufacturer Composite Price Description Compare
IRF280ZSPBF International Rectifier Check for Price Power Field-Effect Transistor, 75A I(D), 75V, 0.0094ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, LEAD FREE, PLASTIC, D2PAK-3 IPD096N08N3GATMA1 vs IRF280ZSPBF
IRF280ZSTRRPBF International Rectifier Check for Price Power Field-Effect Transistor, 75A I(D), 75V, 0.0094ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, LEAD FREE, PLASTIC, D2PAK-3 IPD096N08N3GATMA1 vs IRF280ZSTRRPBF
IRF2807ZS Infineon Technologies AG Check for Price Power Field-Effect Transistor, 75A I(D), 75V, 0.0094ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, PLASTIC, D2PAK-3 IPD096N08N3GATMA1 vs IRF2807ZS
IRF2807ZSTRL Infineon Technologies AG Check for Price Power Field-Effect Transistor, 75A I(D), 75V, 0.0094ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, PLASTIC, D2PAK-3 IPD096N08N3GATMA1 vs IRF2807ZSTRL
934057282118 NXP Semiconductors Check for Price 75A, 75V, 0.009ohm, N-CHANNEL, Si, POWER, MOSFET, PLASTIC, D2PAK-5 IPD096N08N3GATMA1 vs 934057282118
IPB097N08N3GXT Infineon Technologies AG Check for Price Power Field-Effect Transistor, 70A I(D), 80V, 0.0097ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, GREEN, PLASTIC, TO-263, D2PAK-3 IPD096N08N3GATMA1 vs IPB097N08N3GXT
IRF280ZSTRLPBF International Rectifier Check for Price Power Field-Effect Transistor, 75A I(D), 75V, 0.0094ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, LEAD FREE, PLASTIC, D2PAK-3 IPD096N08N3GATMA1 vs IRF280ZSTRLPBF
IPD096N08N3GXT Infineon Technologies AG Check for Price Power Field-Effect Transistor, 73A I(D), 80V, 0.0096ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, GREEN, PLASTIC PACKAGE-3 IPD096N08N3GATMA1 vs IPD096N08N3GXT
IRF2807ZSTRR Infineon Technologies AG Check for Price Power Field-Effect Transistor, 75A I(D), 75V, 0.0094ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, PLASTIC, D2PAK-3 IPD096N08N3GATMA1 vs IRF2807ZSTRR
IRFB3607GPBF International Rectifier Check for Price Power Field-Effect Transistor, 80A I(D), 75V, 0.009ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, HALOGEN FREE AND LEAD FREE, PLASTIC PACKAGE-3 IPD096N08N3GATMA1 vs IRFB3607GPBF
equivalents icon

IPD096N08N3GATMA1 Frequently Asked Questions (FAQ)

  • The maximum operating temperature range for IPD096N08N3GATMA1 is -40°C to 150°C.

  • Proper cooling can be achieved by using a heat sink with a thermal resistance of less than 10°C/W, and ensuring good airflow around the device.

  • The recommended gate resistor value for IPD096N08N3GATMA1 is between 10Ω and 100Ω, depending on the specific application and switching frequency.

  • Yes, IPD096N08N3GATMA1 is qualified according to AEC-Q101, making it suitable for high-reliability applications such as automotive systems.

  • To protect the device from ESD, handle the device by the body, use an ESD wrist strap or mat, and ensure that the device is stored in an anti-static bag or container.

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