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Part Details for IPD110N12N3GATMA1 by Infineon Technologies AG
Overview of IPD110N12N3GATMA1 by Infineon Technologies AG
- Distributor Offerings:
- Number of FFF Equivalents:
- CAD Models:
- Number of Functional Equivalents:
- Part Data Attributes
- Reference Designs:
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Price & Stock for IPD110N12N3GATMA1
| Part # | Distributor | Description | Stock | Price | Buy | |
|---|---|---|---|---|---|---|
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DISTI #
47W3469
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Newark | Mosfet, N Channel, 120V, 75A, To252-3, Channel Type:N Channel, Drain Source Voltage Vds:120V, Continuous Drain Current Id:75A, Transistor Mounting:Surface Mount, Rds(On) Test Voltage:10V, Gate Source Threshold Voltage Max:3V Rohs Compliant: Yes |Infineon IPD110N12N3GATMA1 Min Qty: 1 Package Multiple: 1 Date Code: 0 Container: Cut Tape | 1424 |
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$1.1200 / $1.3200 | Buy Now |
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DISTI #
86AK5200
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Newark | Mosfet, N-Ch, 120V, 75A, To-252 Rohs Compliant: Yes |Infineon IPD110N12N3GATMA1 Min Qty: 2500 Package Multiple: 1 Date Code: 1 Container: Reel | 0 |
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$1.0800 / $1.1000 | Buy Now |
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DISTI #
IPD110N12N3GATMA1CT-ND
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DigiKey | MOSFET N-CH 120V 75A TO252-3 Min Qty: 1 Lead time: 20 Weeks Container: Cut Tape (CT), Digi-Reel®, Tape & Reel (TR) |
7162 In Stock |
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$1.0421 / $2.4000 | Buy Now |
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DISTI #
IPD110N12N3GATMA1
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Avnet Americas | Trans MOSFET N-CH 120V 75A 3-Pin TO-252 T/R - Tape and Reel (Alt: IPD110N12N3GATMA1) RoHS: Compliant Min Qty: 2500 Package Multiple: 2500 Lead time: 18 Weeks, 0 Days Container: Reel | 0 |
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$0.9068 / $1.1083 | Buy Now |
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DISTI #
47W3469
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Avnet Americas | Trans MOSFET N-CH 120V 75A 3-Pin TO-252 T/R - Product that comes on tape, but is not reeled (Alt: 47W3469) RoHS: Not Compliant Min Qty: 1 Package Multiple: 1 Lead time: 19 Weeks, 0 Days Container: Ammo Pack | 1424 Partner Stock |
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$1.6200 / $2.4100 | Buy Now |
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DISTI #
726-IPD110N12N3GATM1
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Mouser Electronics | MOSFET TRENCH >=100V RoHS: Compliant | 27786 |
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$1.0000 / $2.2700 | Buy Now |
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Future Electronics | Single N-Channel 120 V 11 mOhm 49 nC OptiMOS™ Power Mosfet - DPAK RoHS: Compliant pbFree: Yes Min Qty: 2500 Package Multiple: 2500 Container: Reel | 10000Reel |
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$0.9800 / $1.0200 | Buy Now |
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Future Electronics | Single N-Channel 120 V 11 mOhm 49 nC OptiMOS™ Power Mosfet - DPAK RoHS: Compliant pbFree: Yes Min Qty: 2500 Package Multiple: 2500 Container: Reel | 5000Reel |
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$0.6050 | Buy Now |
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Bristol Electronics | 1890 |
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RFQ | ||
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DISTI #
IPD110N12N3GATMA1
|
Avnet Americas | Trans MOSFET N-CH 120V 75A 3-Pin TO-252 T/R - Tape and Reel (Alt: IPD110N12N3GATMA1) RoHS: Compliant Min Qty: 2500 Package Multiple: 2500 Lead time: 18 Weeks, 0 Days Container: Reel | 0 |
|
$0.9068 / $1.1083 | Buy Now |
Part Details for IPD110N12N3GATMA1
IPD110N12N3GATMA1 CAD Models
IPD110N12N3GATMA1 Part Data Attributes
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IPD110N12N3GATMA1
Infineon Technologies AG
Buy Now
Datasheet
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Compare Parts:
IPD110N12N3GATMA1
Infineon Technologies AG
Power Field-Effect Transistor, 75A I(D), 120V, 0.011ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, GREEN, PLASTIC PACKAGE-3/2
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| Rohs Code | Yes | |
| Part Life Cycle Code | Active | |
| Ihs Manufacturer | INFINEON TECHNOLOGIES AG | |
| Package Description | SMALL OUTLINE, R-PSSO-G2 | |
| Reach Compliance Code | not_compliant | |
| ECCN Code | EAR99 | |
| Factory Lead Time | 19 Weeks | |
| Samacsys Manufacturer | Infineon | |
| Avalanche Energy Rating (Eas) | 120 mJ | |
| Case Connection | DRAIN | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 120 V | |
| Drain Current-Max (ID) | 75 A | |
| Drain-source On Resistance-Max | 0.011 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JEDEC-95 Code | TO-252 | |
| JESD-30 Code | R-PSSO-G2 | |
| JESD-609 Code | e3 | |
| Moisture Sensitivity Level | 1 | |
| Number of Elements | 1 | |
| Number of Terminals | 2 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 175 °C | |
| Operating Temperature-Min | -55 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 136 W | |
| Pulsed Drain Current-Max (IDM) | 300 A | |
| Surface Mount | YES | |
| Terminal Finish | Tin (Sn) | |
| Terminal Form | GULL WING | |
| Terminal Position | SINGLE | |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |
Alternate Parts for IPD110N12N3GATMA1
This table gives cross-reference parts and alternative options found for IPD110N12N3GATMA1. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IPD110N12N3GATMA1, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Description | Manufacturer | Compare |
|---|---|---|---|
| IPD110N12N3G | Power Field-Effect Transistor, 75A I(D), 120V, 0.011ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, GREEN, PLASTIC, TO-252, 3 PIN | Infineon Technologies AG | IPD110N12N3GATMA1 vs IPD110N12N3G |