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Transistors / Power Field-Effect Transistors / IPD25N06S240ATMA2
Datasheets
IPD25N06S240ATMA2 by:

Power Field-Effect Transistor, 29A I(D), 55V, 0.04ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, GREEN, PLASTIC PACKAGE-3

Part Details for IPD25N06S240ATMA2 by Infineon Technologies AG

Overview of IPD25N06S240ATMA2 by Infineon Technologies AG

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Applications Energy and Power Systems Renewable Energy

Price & Stock for IPD25N06S240ATMA2

Part # Distributor Description Stock Price Buy
DISTI # 62AK5494
Newark Mosfet, N-Ch, 29A, To-252 Rohs Compliant: Yes |Infineon IPD25N06S240ATMA2 Min Qty: 1 Package Multiple: 1 Date Code: 1 Container: Cut Tape 0
  • 1 $0.9050
  • 10 $0.7420
  • 25 $0.6860
  • 50 $0.6310
  • 100 $0.5760
  • 250 $0.5320
  • 500 $0.4890
  • 1,000 $0.3980
$0.3980 / $0.9050 Buy Now
DISTI # 448-IPD25N06S240ATMA2CT-ND
DigiKey MOSFET N-CH 55V 29A TO252-31 Min Qty: 1 Lead time: 12 Weeks Container: Digi-Reel®, Cut Tape (CT), Tape & Reel (TR) 2430
In Stock
  • 1 $0.8700
  • 10 $0.7130
  • 100 $0.5549
  • 500 $0.4703
  • 1,000 $0.3831
  • 2,500 $0.3607
  • 5,000 $0.3435
  • 12,500 $0.3276
  • 25,000 $0.3270
$0.3270 / $0.8700 Buy Now
DISTI # IPD25N06S240ATMA2
Avnet Americas Trans MOSFET N-CH 55V 29A 3-Pin TO-252 T/R - Tape and Reel (Alt: IPD25N06S240ATMA2) RoHS: Compliant Min Qty: 2500 Package Multiple: 2500 Lead time: 12 Weeks, 0 Days Container: Reel 0
  • 2,500 $0.4055
$0.4055 Buy Now
DISTI # 726-IPD25N06S240ATMA
Mouser Electronics MOSFET MOSFET_)40V 60V) RoHS: Compliant 2318
  • 1 $0.8600
  • 10 $0.7120
  • 100 $0.5540
  • 500 $0.4700
  • 1,000 $0.3830
  • 2,500 $0.3600
  • 5,000 $0.3430
  • 10,000 $0.3270
$0.3270 / $0.8600 Buy Now
DISTI # 80934366
Verical Trans MOSFET N-CH 55V 29A Automotive AEC-Q101 3-Pin(2+Tab) DPAK T/R Min Qty: 2500 Package Multiple: 2500 Date Code: 2306 Americas - 20000
  • 2,500 $0.4211
$0.4211 Buy Now
DISTI # 71239732
Verical Trans MOSFET N-CH 55V 29A Automotive AEC-Q101 3-Pin(2+Tab) DPAK T/R Min Qty: 37 Package Multiple: 1 Date Code: 2252 Americas - 2400
  • 37 $0.8488
  • 50 $0.7463
  • 100 $0.6563
  • 200 $0.6275
  • 500 $0.5925
  • 1,000 $0.5625
$0.5625 / $0.8488 Buy Now
Rochester Electronics IPD25N06 - 55V-60V N-Channel Automotive MOSFET RoHS: Compliant Status: Active Min Qty: 1 4686
  • 1 $0.3815
  • 25 $0.3739
  • 100 $0.3586
  • 500 $0.3433
  • 1,000 $0.3243
$0.3243 / $0.3815 Buy Now
Ameya Holding Limited MOSFET N-CH 55V 29A TO252-3 1159
RFQ
DISTI # C1S322001060770
Chip1Stop MOSFET RoHS: Compliant Container: Cut Tape 2400
  • 5 $0.8440
  • 10 $0.6790
  • 50 $0.5970
  • 100 $0.5250
  • 200 $0.5020
  • 500 $0.4740
  • 1,000 $0.4500
$0.4500 / $0.8440 Buy Now
DISTI # SP001063628
EBV Elektronik Trans MOSFET N-CH 55V 29A 3-Pin TO-252 T/R (Alt: SP001063628) RoHS: Compliant Min Qty: 2500 Package Multiple: 2500 Lead time: 13 Weeks, 0 Days EBV - 0
Buy Now

Part Details for IPD25N06S240ATMA2

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IPD25N06S240ATMA2 Part Data Attributes:

Parametric Data
IPD25N06S240ATMA2 Infineon Technologies AG
Buy Now Datasheet
Compare Parts:
IPD25N06S240ATMA2 Infineon Technologies AG Power Field-Effect Transistor, 29A I(D), 55V, 0.04ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, GREEN, PLASTIC PACKAGE-3
Pbfree Code Yes
Rohs Code Yes
Part Life Cycle Code Active
Ihs Manufacturer INFINEON TECHNOLOGIES AG
Package Description SMALL OUTLINE, R-PSSO-G2
Reach Compliance Code compliant
ECCN Code EAR99
Factory Lead Time 12 Weeks
Samacsys Manufacturer Infineon
Avalanche Energy Rating (Eas) 80 mJ
Case Connection DRAIN
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 55 V
Drain Current-Max (ID) 29 A
Drain-source On Resistance-Max 0.04 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code TO-252
JESD-30 Code R-PSSO-G2
JESD-609 Code e3
Moisture Sensitivity Level 1
Number of Elements 1
Number of Terminals 2
Operating Mode ENHANCEMENT MODE
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Peak Reflow Temperature (Cel) NOT SPECIFIED
Polarity/Channel Type N-CHANNEL
Pulsed Drain Current-Max (IDM) 116 A
Surface Mount YES
Terminal Finish Tin (Sn)
Terminal Form GULL WING
Terminal Position SINGLE
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Transistor Element Material SILICON

Alternate Parts for IPD25N06S240ATMA2

This table gives cross-reference parts and alternative options found for IPD25N06S240ATMA2. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IPD25N06S240ATMA2, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
NTD20N06 20A, 60V, 0.046ohm, N-CHANNEL, Si, POWER, MOSFET, CASE 369A-13, DPAK-3 onsemi IPD25N06S240ATMA2 vs NTD20N06
IRFR4105 Power Field-Effect Transistor, 20A I(D), 55V, 0.045ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, PLASTIC, DPAK-3 Infineon Technologies AG IPD25N06S240ATMA2 vs IRFR4105
IRFR4105TRRPBF Power Field-Effect Transistor, 20A I(D), 55V, 0.045ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, LEAD FREE, PLASTIC, DPAK-3 Infineon Technologies AG IPD25N06S240ATMA2 vs IRFR4105TRRPBF
2SK2869S-E 20A, 60V, 0.045ohm, N-CHANNEL, Si, POWER, MOSFET, DPAK-3 Renesas Electronics Corporation IPD25N06S240ATMA2 vs 2SK2869S-E
IRFR4105TRLPBF Power Field-Effect Transistor, 20A I(D), 55V, 0.045ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, LEAD FREE, PLASTIC, DPAK-3 Infineon Technologies AG IPD25N06S240ATMA2 vs IRFR4105TRLPBF
AUIRFR4105 Power Field-Effect Transistor, 20A I(D), 55V, 0.045ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, DPAK-3 Infineon Technologies AG IPD25N06S240ATMA2 vs AUIRFR4105
IPD30N06S3L20ATMA1 Power Field-Effect Transistor, 30A I(D), 55V, 0.038ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, GREEN, TO-252, 3 PIN Infineon Technologies AG IPD25N06S240ATMA2 vs IPD30N06S3L20ATMA1
NTD5867NLT4G Single N-Channel Logic Level Power MOSFET 60V, 19A, 39mΩ, DPAK 4 LEAD Single Gauge Surface Mount, 2500-REEL onsemi IPD25N06S240ATMA2 vs NTD5867NLT4G
IRFR4105TR Power Field-Effect Transistor, 20A I(D), 55V, 0.045ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, PLASTIC, DPAK-3 International Rectifier IPD25N06S240ATMA2 vs IRFR4105TR
NTD20N06T4G Single N-Channel Power MOSFET 60V, 20A, 46mΩ, DPAK (SINGLE GAUGE) TO-252, 2500-REEL onsemi IPD25N06S240ATMA2 vs NTD20N06T4G

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