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Transistors / Power Field-Effect Transistors / IPD30N06S4L23ATMA2
Datasheets
IPD30N06S4L23ATMA2 by: Infineon Technologies AG

Power Field-Effect Transistor, 30A I(D), 60V, 0.023ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, GREEN, PLASTIC PACKAGE-3

Part Details for IPD30N06S4L23ATMA2 by Infineon Technologies AG

Overview of IPD30N06S4L23ATMA2 by Infineon Technologies AG

Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.

Applications Automotive

Price & Stock for IPD30N06S4L23ATMA2

Part # Distributor Description Stock Price Buy
DISTI # 49AC0292
Newark Mosfet, N-Ch, 60V, 30A, To-252, Channel Type:N Channel, Drain Source Voltage Vds:60V, Continuous Drain Current Id:30A, Transistor Mounting:Surface Mount, Rds(On) Test Voltage:10V, Gate Source Threshold Voltage Max:1.7V Rohs Compliant: Yes |Infineon IPD30N06S4L23ATMA2 RoHS: Compliant Min Qty: 1 Package Multiple: 1 Date Code: 0 Container: Cut Tape 53
  • 1 $0.1040
  • 10 $0.1040
  • 25 $0.1040
  • 50 $0.1040
  • 100 $0.1040
  • 250 $0.1040
  • 500 $0.1040
  • 1,000 $0.1040
$0.1040 Buy Now
DISTI # 86AK5207
Newark Mosfet, N-Ch, 60V, 30A, To-252 Rohs Compliant: Yes |Infineon IPD30N06S4L23ATMA2 RoHS: Compliant Min Qty: 2500 Package Multiple: 1 Date Code: 1 Container: Reel 0
  • 2,500 $0.4520
  • 5,000 $0.4410
  • 10,000 $0.4320
  • 15,000 $0.4210
$0.4210 / $0.4520 Buy Now
DISTI # IPD30N06S4L23ATMA2CT-ND
DigiKey MOSFET N-CH 60V 30A TO252-31 Min Qty: 1 Lead time: 12 Weeks Container: Digi-Reel®, Cut Tape (CT), Tape & Reel (TR) 834
In Stock
  • 1 $1.6000
  • 10 $0.9280
  • 100 $0.6575
  • 500 $0.5341
  • 1,000 $0.4877
  • 2,500 $0.4373
  • 5,000 $0.4062
  • 7,500 $0.4042
$0.4042 / $1.6000 Buy Now
DISTI # IPD30N06S4L23ATMA2
Avnet Americas Trans MOSFET N-CH 60V 30A 3-Pin TO-252 T/R - Tape and Reel (Alt: IPD30N06S4L23ATMA2) RoHS: Compliant Min Qty: 774 Package Multiple: 1 Lead time: 4 Weeks, 0 Days Container: Reel 11788 Partner Stock
  • 1 $0.4716
  • 25 $0.4622
  • 100 $0.4433
  • 500 $0.4244
  • 1,000 $0.4009
$0.4009 / $0.4716 Buy Now
DISTI # 49AC0292
Avnet Americas Trans MOSFET N-CH 60V 30A 3-Pin TO-252 T/R - Product that comes on tape, but is not reeled (Alt: 49AC0292) RoHS: Not Compliant Min Qty: 1 Package Multiple: 1 Lead time: 16 Weeks, 4 Days Container: Ammo Pack 53 Partner Stock
  • 1 $0.8630
  • 10 $0.7360
  • 25 $0.7010
  • 50 $0.6670
  • 100 $0.6310
$0.6310 / $0.8630 Buy Now
DISTI # IPD30N06S4L23ATMA2
Avnet Americas Trans MOSFET N-CH 60V 30A 3-Pin TO-252 T/R - Tape and Reel (Alt: IPD30N06S4L23ATMA2) RoHS: Not Compliant Min Qty: 2500 Package Multiple: 2500 Lead time: 12 Weeks, 0 Days Container: Reel 0
RFQ
DISTI # 726-IPD30N06S4L23ATM
Mouser Electronics MOSFETs MOSFET RoHS: Compliant 8628
  • 1 $0.6800
  • 10 $0.6740
  • 100 $0.5520
  • 500 $0.4920
  • 1,000 $0.4400
  • 2,500 $0.4360
  • 5,000 $0.4090
  • 10,000 $0.4040
$0.4040 / $0.6800 Buy Now
Future Electronics IPD30N06S4L23 Series 60 V 30 A 23 mOhm Single N-Channel MOSFET - TO-252-3 RoHS: Compliant pbFree: Yes Min Qty: 2500 Package Multiple: 2500 Lead time: 12 Weeks Container: Reel 0
Reel
  • 2,500 $0.4250
  • 5,000 $0.4150
  • 7,500 $0.4100
  • 10,000 $0.4050
  • 12,500 $0.3950
$0.3950 / $0.4250 Buy Now
Future Electronics IPD30N06S4L23 Series 60 V 30 A 23 mOhm Single N-Channel MOSFET - TO-252-3 RoHS: Compliant pbFree: Yes Min Qty: 2500 Package Multiple: 2500 Lead time: 12 Weeks Container: Reel 0
Reel
  • 2,500 $0.4250
  • 5,000 $0.4150
  • 7,500 $0.4100
  • 10,000 $0.4050
  • 12,500 $0.3950
$0.3950 / $0.4250 Buy Now
Rochester Electronics IPD30N06 - 55V-60V N-Channel Automotive MOSFET RoHS: Compliant Status: Active Min Qty: 1 11788
  • 1 $0.4716
  • 25 $0.4622
  • 100 $0.4433
  • 500 $0.4244
  • 1,000 $0.4009
$0.4009 / $0.4716 Buy Now
Ameya Holding Limited   2722
RFQ
DISTI # C1S322000652592
Chip1Stop MOSFET RoHS: Compliant 10000
  • 2,500 $0.4100
  • 5,000 $0.4070
  • 10,000 $0.4010
$0.4010 / $0.4100 Buy Now
DISTI # C1S322001060813
Chip1Stop MOSFET RoHS: Compliant Container: Cut Tape 2490
  • 5 $0.3150
  • 50 $0.3130
  • 500 $0.3070
$0.3070 / $0.3150 Buy Now
DISTI # C1S322000683033
Chip1Stop MOSFET RoHS: Compliant 2381
  • 1 $0.7060
  • 10 $0.5040
  • 25 $0.4636
  • 100 $0.4563
  • 250 $0.4489
  • 500 $0.4460
$0.4460 / $0.7060 Buy Now
DISTI # SP001028638
EBV Elektronik Trans MOSFET N-CH 60V 30A 3-Pin TO-252 T/R (Alt: SP001028638) RoHS: Compliant Min Qty: 2500 Package Multiple: 2500 Lead time: 13 Weeks, 0 Days EBV - 0
Buy Now
Win Source Electronics MOSFET N-CH 60V 30A TO252-31 / N-Channel 60 V 30A (Tc) 36W (Tc) Surface Mount PG-TO252-3-11 137200
  • 90 $0.5660
  • 220 $0.4640
  • 335 $0.4500
  • 460 $0.4350
  • 595 $0.4210
  • 800 $0.3770
$0.3770 / $0.5660 Buy Now

Part Details for IPD30N06S4L23ATMA2

IPD30N06S4L23ATMA2 CAD Models

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IPD30N06S4L23ATMA2 Part Data Attributes

Parametric Data
IPD30N06S4L23ATMA2 Infineon Technologies AG
Buy Now Datasheet
Compare Parts:
IPD30N06S4L23ATMA2 Infineon Technologies AG Power Field-Effect Transistor, 30A I(D), 60V, 0.023ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, GREEN, PLASTIC PACKAGE-3
Pbfree Code Yes
Rohs Code Yes
Part Life Cycle Code Active
Ihs Manufacturer INFINEON TECHNOLOGIES AG
Package Description SMALL OUTLINE, R-PSSO-G2
Reach Compliance Code not_compliant
ECCN Code EAR99
Factory Lead Time 4 Weeks
Samacsys Manufacturer Infineon
Avalanche Energy Rating (Eas) 18 mJ
Case Connection DRAIN
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 60 V
Drain Current-Max (ID) 30 A
Drain-source On Resistance-Max 0.023 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code TO-252
JESD-30 Code R-PSSO-G2
JESD-609 Code e3
Moisture Sensitivity Level 1
Number of Elements 1
Number of Terminals 2
Operating Mode ENHANCEMENT MODE
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Peak Reflow Temperature (Cel) NOT SPECIFIED
Polarity/Channel Type N-CHANNEL
Pulsed Drain Current-Max (IDM) 120 A
Surface Mount YES
Terminal Finish Tin (Sn)
Terminal Form GULL WING
Terminal Position SINGLE
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Transistor Application SWITCHING
Transistor Element Material SILICON

Alternate Parts for IPD30N06S4L23ATMA2

This table gives cross-reference parts and alternative options found for IPD30N06S4L23ATMA2. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IPD30N06S4L23ATMA2, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
IPD230N06LGBTMA1 Power Field-Effect Transistor, 30A I(D), 60V, 0.023ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, GREEN, PLASTIC, 3 PIN Infineon Technologies AG IPD30N06S4L23ATMA2 vs IPD230N06LGBTMA1
AON7444 Power Field-Effect Transistor, 33A I(D), 60V, 0.022ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, 3 X 3 MM, GREEN, DFN-8 Alpha & Omega Semiconductor IPD30N06S4L23ATMA2 vs AON7444
SP000453644 Power Field-Effect Transistor, 30A I(D), 60V, 0.022ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, Infineon Technologies AG IPD30N06S4L23ATMA2 vs SP000453644
IPD30N06S4L23ATMA1 Power Field-Effect Transistor, 30A I(D), 60V, 0.023ohm, 1-Element, N-Channel, Silicon, Metal-Oxide Semiconductor FET, TO-252, GREEN, PLASTIC PACKAGE-3 Infineon Technologies AG IPD30N06S4L23ATMA2 vs IPD30N06S4L23ATMA1
IPD220N06L3GBTMA1 Power Field-Effect Transistor, 30A I(D), 60V, 0.022ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, GREEN, PLASTIC, TO-252, 3 PIN Infineon Technologies AG IPD30N06S4L23ATMA2 vs IPD220N06L3GBTMA1
BUK9M24-60EX BUK9M24-60E - N-channel 60 V, 24 mΩ logic level MOSFET in LFPAK33@en-us Nexperia IPD30N06S4L23ATMA2 vs BUK9M24-60EX

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