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Power Field-Effect Transistor, 30A I(D), 100V, 0.0418ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, GREEN, PLASTIC PACKAGE-3/2
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
79X1436
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Newark | Mosfet, Aec-Q101, N-Ch, 100V, To-252- 3, Channel Type:N Channel, Drain Source Voltage Vds:100V, Continuous Drain Current Id:30A, Transistor Mounting:Surface Mount, Rds(On) Test Voltage:10V, Gate Source Threshold Voltage Max:1.7V Rohs Compliant: Yes |Infineon IPD30N10S3L34ATMA1 RoHS: Compliant Min Qty: 1 Package Multiple: 1 Date Code: 0 Container: Cut Tape | 19259 |
|
$0.6230 / $1.3600 | Buy Now |
DISTI #
79AH3151
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Newark | Mosfet_(75V 120V( Rohs Compliant: Yes |Infineon IPD30N10S3L34ATMA1 RoHS: Compliant Min Qty: 2500 Package Multiple: 1 Date Code: 0 Container: Reel | 0 |
|
$0.6000 / $0.7660 | Buy Now |
DISTI #
86AK5208
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Newark | Mosfet, N-Ch, 100V, 30A, To-252 Rohs Compliant: Yes |Infineon IPD30N10S3L34ATMA1 RoHS: Compliant Min Qty: 2500 Package Multiple: 1 Date Code: 1 Container: Reel | 0 |
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$0.5390 / $0.5790 | Buy Now |
DISTI #
IPD30N10S3L34ATMA1CT-ND
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DigiKey | MOSFET N-CH 100V 30A TO252-3 Min Qty: 1 Lead time: 12 Weeks Container: Cut Tape (CT), Digi-Reel®, Tape & Reel (TR) |
34763 In Stock |
|
$0.5172 / $1.9100 | Buy Now |
DISTI #
IPD30N10S3L34ATMA1
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Avnet Americas | Trans MOSFET N-CH 100V 30A 3-Pin(2+Tab) TO-252 - Tape and Reel (Alt: IPD30N10S3L34ATMA1) RoHS: Compliant Min Qty: 605 Package Multiple: 1 Lead time: 4 Weeks, 0 Days Container: Reel | 82739 Partner Stock |
|
$0.5432 / $0.6035 | Buy Now |
DISTI #
726-IPD30N10S3L34ATM
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Mouser Electronics | MOSFETs N-Ch 100V 30A DPAK-2 OptiMOS-T RoHS: Compliant | 5947 |
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$0.5170 / $1.3200 | Buy Now |
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Future Electronics | Single N-Channel 100 V 31 mOhm 31 nC OptiMOS™ Power Mosfet - TO-252-3 RoHS: Compliant pbFree: Yes Min Qty: 2500 Package Multiple: 2500 Lead time: 12 Weeks Container: Reel | 2500Reel |
|
$0.4100 / $0.4300 | Buy Now |
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Quest Components | 3800 |
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$0.3927 / $1.7850 | Buy Now | |
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Rochester Electronics | MOSFET_(75V,120V( RoHS: Compliant Status: Active Min Qty: 1 | 82739 |
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$0.5130 / $0.6035 | Buy Now |
DISTI #
C1S322000522088
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Chip1Stop | Trans MOSFET N-CH 100V 30A Automotive 3-Pin(2+Tab) DPAK T/R RoHS: Compliant | 17500 |
|
$0.5060 / $0.5220 | Buy Now |
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IPD30N10S3L34ATMA1
Infineon Technologies AG
Buy Now
Datasheet
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Compare Parts:
IPD30N10S3L34ATMA1
Infineon Technologies AG
Power Field-Effect Transistor, 30A I(D), 100V, 0.0418ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, GREEN, PLASTIC PACKAGE-3/2
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Rohs Code | Yes | |
Part Life Cycle Code | Not Recommended | |
Ihs Manufacturer | INFINEON TECHNOLOGIES AG | |
Package Description | SMALL OUTLINE, R-PSSO-G2 | |
Reach Compliance Code | not_compliant | |
ECCN Code | EAR99 | |
Factory Lead Time | 4 Weeks | |
Samacsys Manufacturer | Infineon | |
Avalanche Energy Rating (Eas) | 138 mJ | |
Case Connection | DRAIN | |
Configuration | SINGLE WITH BUILT-IN DIODE | |
DS Breakdown Voltage-Min | 100 V | |
Drain Current-Max (ID) | 30 A | |
Drain-source On Resistance-Max | 0.0418 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
Feedback Cap-Max (Crss) | 68 pF | |
JEDEC-95 Code | TO-252 | |
JESD-30 Code | R-PSSO-G2 | |
JESD-609 Code | e3 | |
Moisture Sensitivity Level | 1 | |
Number of Elements | 1 | |
Number of Terminals | 2 | |
Operating Mode | ENHANCEMENT MODE | |
Operating Temperature-Max | 175 °C | |
Operating Temperature-Min | -55 °C | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | SMALL OUTLINE | |
Peak Reflow Temperature (Cel) | 260 | |
Polarity/Channel Type | N-CHANNEL | |
Power Dissipation-Max (Abs) | 57 W | |
Pulsed Drain Current-Max (IDM) | 120 A | |
Reference Standard | AEC-Q101; IEC-68-1 | |
Surface Mount | YES | |
Terminal Finish | Tin (Sn) | |
Terminal Form | GULL WING | |
Terminal Position | SINGLE | |
Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
Transistor Element Material | SILICON |
This table gives cross-reference parts and alternative options found for IPD30N10S3L34ATMA1. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IPD30N10S3L34ATMA1, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number | Description | Manufacturer | Compare |
---|---|---|---|
IPD30N10S3L-34 | Power Field-Effect Transistor, 30A I(D), 100V, 0.0418ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AB, GREEN, PLASTIC, TO-252, 3 PIN | Infineon Technologies AG | IPD30N10S3L34ATMA1 vs IPD30N10S3L-34 |