Part Details for IPD35N10S3L-26 by Infineon Technologies AG
Results Overview of IPD35N10S3L-26 by Infineon Technologies AG
- Distributor Offerings: (3 listings)
- Number of FFF Equivalents: (0 replacements)
- Tariff Estimator: (Available) NEW
- Number of Functional Equivalents: (10 options)
- CAD Models: (Available)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
IPD35N10S3L-26 Information
IPD35N10S3L-26 by Infineon Technologies AG is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Price & Stock for IPD35N10S3L-26
| Part # | Distributor | Description | Stock | Price | Buy | |
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Bristol Electronics | 2500 |
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RFQ | ||
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Bristol Electronics | Min Qty: 3 | 317 |
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$0.5400 / $1.6875 | Buy Now |
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Win Source Electronics | Trans MOSFET N-CH 100V 35A Automotive 3-Pin(2+Tab) DPAK T/R / OptiMOS-T Power-Transistor | 27500 |
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$2.1909 / $3.2863 | Buy Now |
US Tariff Estimator: IPD35N10S3L-26 by Infineon Technologies AG
Calculations from this tool are estimations only for imports into the United States. Please refer to the distributor or manufacturer and reference official US government sources and authorities to verify any final purchase costs.
Part Details for IPD35N10S3L-26
IPD35N10S3L-26 CAD Models
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IPD35N10S3L-26 Part Data Attributes
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IPD35N10S3L-26
Infineon Technologies AG
Buy Now
Datasheet
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IPD35N10S3L-26
Infineon Technologies AG
Power Field-Effect Transistor, 35A I(D), 100V, 0.026ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, GREEN, PLASTIC PACKAGE-3
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| Pbfree Code | Yes | |
| Rohs Code | Yes | |
| Part Life Cycle Code | Active | |
| Part Package Code | TO-252 | |
| Package Description | To-252-3-11, 3/2 Pin | |
| Pin Count | 4 | |
| Reach Compliance Code | Not Compliant | |
| ECCN Code | EAR99 | |
| HTS Code | 8541.29.00.95 | |
| Factory Lead Time | 4 Weeks | |
| Avalanche Energy Rating (Eas) | 175 Mj | |
| Case Connection | Drain | |
| Configuration | Single With Built-In Diode | |
| DS Breakdown Voltage-Min | 100 V | |
| Drain Current-Max (ID) | 35 A | |
| Drain-source On Resistance-Max | 0.0319 Ω | |
| FET Technology | Metal-Oxide Semiconductor | |
| Feedback Cap-Max (Crss) | 75 Pf | |
| JEDEC-95 Code | TO-252 | |
| JESD-30 Code | R-PSSO-G2 | |
| JESD-609 Code | e3 | |
| Moisture Sensitivity Level | 1 | |
| Number of Elements | 1 | |
| Number of Terminals | 2 | |
| Operating Mode | Enhancement Mode | |
| Operating Temperature-Max | 175 °C | |
| Operating Temperature-Min | -55 °C | |
| Package Body Material | Plastic/Epoxy | |
| Package Shape | Rectangular | |
| Package Style | Small Outline | |
| Peak Reflow Temperature (Cel) | 260 | |
| Polarity/Channel Type | N-Channel | |
| Power Dissipation-Max (Abs) | 71 W | |
| Pulsed Drain Current-Max (IDM) | 140 A | |
| Qualification Status | Not Qualified | |
| Reference Standard | Aec-Q101; Iec-68-1 | |
| Surface Mount | Yes | |
| Terminal Finish | Tin (Sn) | |
| Terminal Form | Gull Wing | |
| Terminal Position | Single | |
| Time@Peak Reflow Temperature-Max (s) | Not Specified | |
| Transistor Element Material | Silicon |
Alternate Parts for IPD35N10S3L-26
This table gives cross-reference parts and alternative options found for IPD35N10S3L-26. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IPD35N10S3L-26, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Manufacturer | Composite Price | Description | Compare |
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| FDD3670 | onsemi | $1.0350 | 100V N-Channel PowerTrench® MOSFET 34A, 32mΩ, DPAK-3 / TO-252-3, 2500-REEL | IPD35N10S3L-26 vs FDD3670 |
| IPB35N10S3L26ATMA2 | Infineon Technologies AG | $1.9087 | Power Field-Effect Transistor, 35A I(D), 100V, 0.0322ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, TO-263-3-2, 3/2 PIN | IPD35N10S3L-26 vs IPB35N10S3L26ATMA2 |
| IPD35N10S3L26ATMA1 | Infineon Technologies AG | Check for Price | Power Field-Effect Transistor, 35A I(D), 100V, 0.0319ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, GREEN, PLASTIC PACKAGE-3/2 | IPD35N10S3L-26 vs IPD35N10S3L26ATMA1 |
| SHDC225456 | Sensitron Semiconductors | Check for Price | Power Field-Effect Transistor, 35A I(D), 100V, 0.03ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-254AA, TO-254, 3 PIN | IPD35N10S3L-26 vs SHDC225456 |
| IRF5M3710SCV | Infineon Technologies AG | Check for Price | Power Field-Effect Transistor, 35A I(D), 100V, 0.03ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-254AA, HERMETIC SEALED PACKAGE-3 | IPD35N10S3L-26 vs IRF5M3710SCV |
| IRF540Z | Infineon Technologies AG | Check for Price | Power Field-Effect Transistor, 36A I(D), 100V, 0.0265ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, PLASTIC PACKAGE-3 | IPD35N10S3L-26 vs IRF540Z |
| IPB35N10S3L-26 | Infineon Technologies AG | Check for Price | Power Field-Effect Transistor, 35A I(D), 100V, 0.0322ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, GREEN, PLASTIC, TO-263, 3 PIN | IPD35N10S3L-26 vs IPB35N10S3L-26 |
| IRF5M3710SCX | Infineon Technologies AG | Check for Price | Power Field-Effect Transistor, 35A I(D), 100V, 0.03ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-254AA, HERMETIC SEALED PACKAGE-3 | IPD35N10S3L-26 vs IRF5M3710SCX |
| IRF5M3710PBF | Infineon Technologies AG | Check for Price | Power Field-Effect Transistor, 35A I(D), 100V, 0.03ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-254AA, HERMETIC SEALED PACKAGE-3 | IPD35N10S3L-26 vs IRF5M3710PBF |
| APM1101NUC-TRG | American Power Devices Inc | Check for Price | Power Field-Effect Transistor, 35A I(D), 100V, 0.025ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, GREEN PACKAGE-3 | IPD35N10S3L-26 vs APM1101NUC-TRG |
IPD35N10S3L-26 Frequently Asked Questions (FAQ)
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The maximum operating temperature range for the IPD35N10S3L-26 is -40°C to 150°C.
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To ensure reliability, it's essential to follow the recommended thermal management guidelines, such as using a heat sink, and ensuring good airflow around the device.
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The recommended gate resistor value for the IPD35N10S3L-26 is typically in the range of 10 ohms to 100 ohms, depending on the specific application and switching frequency.
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Yes, the IPD35N10S3L-26 is suitable for high-frequency switching applications up to 100 kHz, but it's essential to consider the device's switching losses and thermal management.
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To protect the IPD35N10S3L-26 from overvoltage and overcurrent, it's recommended to use a voltage clamp or a surge protector, and to implement overcurrent protection using a fuse or a current sense resistor.