Datasheets
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IPD50N04S4-10 by:
Infineon Technologies AG

Power Field-Effect Transistor, 50A I(D), 40V, 0.0093ohm, 1-Element, N-Channel, Silicon, Metal-Oxide Semiconductor FET, TO-252, GREEN, PLASTIC PACKAGE-3

Part Details for IPD50N04S4-10 by Infineon Technologies AG

Results Overview of IPD50N04S4-10 by Infineon Technologies AG

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IPD50N04S4-10 Information

IPD50N04S4-10 by Infineon Technologies AG is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.

A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.

Price & Stock for IPD50N04S4-10

Part # Distributor Description Stock Price Buy
Win Source Electronics MOSFET N-CH 40V 50A TO252-3-313 76400
  • 90 $0.6602
  • 215 $0.5418
  • 335 $0.5248
  • 455 $0.5079
  • 590 $0.4910
  • 790 $0.4402
$0.4402 / $0.6602 Buy Now

Part Details for IPD50N04S4-10

IPD50N04S4-10 CAD Models

IPD50N04S4-10 Part Data Attributes

IPD50N04S4-10 Infineon Technologies AG
Buy Now Datasheet
Compare Parts:
IPD50N04S4-10 Infineon Technologies AG Power Field-Effect Transistor, 50A I(D), 40V, 0.0093ohm, 1-Element, N-Channel, Silicon, Metal-Oxide Semiconductor FET, TO-252, GREEN, PLASTIC PACKAGE-3
Pbfree Code Yes
Rohs Code Yes
Part Life Cycle Code Active
Part Package Code TO-252
Package Description Green, Plastic Package-3
Pin Count 4
Reach Compliance Code Not Compliant
ECCN Code EAR99
Factory Lead Time 12 Weeks
Avalanche Energy Rating (Eas) 42 Mj
Case Connection Drain
Configuration Single With Built-In Diode
DS Breakdown Voltage-Min 40 V
Drain Current-Max (ID) 50 A
Drain-source On Resistance-Max 0.0093 Ω
FET Technology Metal-Oxide Semiconductor
JEDEC-95 Code TO-252
JESD-30 Code R-PSSO-G2
JESD-609 Code e3
Moisture Sensitivity Level 1
Number of Elements 1
Number of Terminals 2
Operating Mode Enhancement Mode
Operating Temperature-Max 175 °C
Package Body Material Plastic/Epoxy
Package Shape Rectangular
Package Style Small Outline
Peak Reflow Temperature (Cel) 260
Polarity/Channel Type N-Channel
Power Dissipation-Max (Abs) 41 W
Pulsed Drain Current-Max (IDM) 200 A
Qualification Status Not Qualified
Surface Mount Yes
Terminal Finish Tin (Sn)
Terminal Form Gull Wing
Terminal Position Single
Time@Peak Reflow Temperature-Max (s) Not Specified
Transistor Element Material Silicon
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IPD50N04S4-10 Related Parts

IPD50N04S4-10 Frequently Asked Questions (FAQ)

  • The maximum operating temperature range for the IPD50N04S4-10 is -55°C to 175°C.

  • To ensure reliability, it's essential to follow proper thermal management practices, such as providing adequate heat sinking and ensuring good airflow around the device.

  • The recommended gate resistor value for the IPD50N04S4-10 is typically in the range of 10 Ω to 100 Ω, depending on the specific application and switching frequency.

  • Yes, the IPD50N04S4-10 is suitable for high-frequency switching applications up to 100 kHz, but it's essential to consider the device's switching losses and thermal management.

  • To protect the IPD50N04S4-10 from ESD, it's essential to follow proper handling and storage procedures, such as using ESD-safe materials and equipment, and ensuring that all personnel handling the device are properly grounded.

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