-
Part Symbol
-
Footprint
Available Download Formats
By downloading CAD models, you agree to our Terms & Conditions and Privacy Policy
Power Field-Effect Transistor, 50A I(D), 40V, 0.0093ohm, 1-Element, N-Channel, Silicon, Metal-Oxide Semiconductor FET, TO-252, GREEN, PLASTIC PACKAGE-3
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
IPD50N04S4-10 by Infineon Technologies AG is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
| Part # | Distributor | Description | Stock | Price | Buy | |
|---|---|---|---|---|---|---|
|
|
Win Source Electronics | MOSFET N-CH 40V 50A TO252-3-313 | 76400 |
|
$0.4402 / $0.6602 | Buy Now |
By downloading CAD models, you agree to our Terms & Conditions and Privacy Policy
|
|
IPD50N04S4-10
Infineon Technologies AG
Buy Now
Datasheet
|
Compare Parts:
IPD50N04S4-10
Infineon Technologies AG
Power Field-Effect Transistor, 50A I(D), 40V, 0.0093ohm, 1-Element, N-Channel, Silicon, Metal-Oxide Semiconductor FET, TO-252, GREEN, PLASTIC PACKAGE-3
|
| Pbfree Code | Yes | |
| Rohs Code | Yes | |
| Part Life Cycle Code | Active | |
| Part Package Code | TO-252 | |
| Package Description | Green, Plastic Package-3 | |
| Pin Count | 4 | |
| Reach Compliance Code | Not Compliant | |
| ECCN Code | EAR99 | |
| Factory Lead Time | 12 Weeks | |
| Avalanche Energy Rating (Eas) | 42 Mj | |
| Case Connection | Drain | |
| Configuration | Single With Built-In Diode | |
| DS Breakdown Voltage-Min | 40 V | |
| Drain Current-Max (ID) | 50 A | |
| Drain-source On Resistance-Max | 0.0093 Ω | |
| FET Technology | Metal-Oxide Semiconductor | |
| JEDEC-95 Code | TO-252 | |
| JESD-30 Code | R-PSSO-G2 | |
| JESD-609 Code | e3 | |
| Moisture Sensitivity Level | 1 | |
| Number of Elements | 1 | |
| Number of Terminals | 2 | |
| Operating Mode | Enhancement Mode | |
| Operating Temperature-Max | 175 °C | |
| Package Body Material | Plastic/Epoxy | |
| Package Shape | Rectangular | |
| Package Style | Small Outline | |
| Peak Reflow Temperature (Cel) | 260 | |
| Polarity/Channel Type | N-Channel | |
| Power Dissipation-Max (Abs) | 41 W | |
| Pulsed Drain Current-Max (IDM) | 200 A | |
| Qualification Status | Not Qualified | |
| Surface Mount | Yes | |
| Terminal Finish | Tin (Sn) | |
| Terminal Form | Gull Wing | |
| Terminal Position | Single | |
| Time@Peak Reflow Temperature-Max (s) | Not Specified | |
| Transistor Element Material | Silicon |
The maximum operating temperature range for the IPD50N04S4-10 is -55°C to 175°C.
To ensure reliability, it's essential to follow proper thermal management practices, such as providing adequate heat sinking and ensuring good airflow around the device.
The recommended gate resistor value for the IPD50N04S4-10 is typically in the range of 10 Ω to 100 Ω, depending on the specific application and switching frequency.
Yes, the IPD50N04S4-10 is suitable for high-frequency switching applications up to 100 kHz, but it's essential to consider the device's switching losses and thermal management.
To protect the IPD50N04S4-10 from ESD, it's essential to follow proper handling and storage procedures, such as using ESD-safe materials and equipment, and ensuring that all personnel handling the device are properly grounded.