There are no models available for this part yet.
Overview of IPD50N06S409ATMA1 by Infineon Technologies AG
Note: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
- Distributor Offerings: ( 1 listing )
- Number of FFF Equivalents: ( 0 replacements )
- CAD Models: ( Request Part )
- Number of Functional Equivalents: ( 5 options )
- Part Data Attributes ( Available )
- Reference Designs: ( Not Available )
Price & Stock for IPD50N06S409ATMA1 by Infineon Technologies AG
| Part # | Manufacturer | Description | Stock | Price | Buy | ||
|---|---|---|---|---|---|---|---|
|
DISTI #
IPD50N06S409ATMA1TR-ND
|
DigiKey | MOSFET N-CH 60V 50A TO252-3 Lead time: 39 Weeks Container: Tape & Reel (TR) | Limited Supply - Call |
|
Buy Now |
CAD Models for IPD50N06S409ATMA1 by Infineon Technologies AG
Part Data Attributes for IPD50N06S409ATMA1 by Infineon Technologies AG
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|
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|---|---|
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Rohs Code
|
Yes
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|
Part Life Cycle Code
|
Obsolete
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Ihs Manufacturer
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INFINEON TECHNOLOGIES AG
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|
Package Description
|
GREEN, PLASTIC PACKAGE-3/2
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Reach Compliance Code
|
compliant
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ECCN Code
|
EAR99
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Samacsys Manufacturer
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Infineon
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|
Avalanche Energy Rating (Eas)
|
87 mJ
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Case Connection
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DRAIN
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Configuration
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SINGLE WITH BUILT-IN DIODE
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DS Breakdown Voltage-Min
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60 V
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Drain Current-Max (ID)
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50 A
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Drain-source On Resistance-Max
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0.009 Ω
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FET Technology
|
METAL-OXIDE SEMICONDUCTOR
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JEDEC-95 Code
|
TO-252
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JESD-30 Code
|
R-PSSO-G2
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Number of Elements
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1
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Number of Terminals
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2
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Operating Mode
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ENHANCEMENT MODE
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Package Body Material
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PLASTIC/EPOXY
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Package Shape
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RECTANGULAR
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Package Style
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SMALL OUTLINE
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Peak Reflow Temperature (Cel)
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NOT SPECIFIED
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Polarity/Channel Type
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N-CHANNEL
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Pulsed Drain Current-Max (IDM)
|
200 A
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Reference Standard
|
AEC-Q101
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Surface Mount
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YES
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Terminal Form
|
GULL WING
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Terminal Position
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SINGLE
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Time@Peak Reflow Temperature-Max (s)
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NOT SPECIFIED
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Transistor Element Material
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SILICON
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Alternate Parts for IPD50N06S409ATMA1
This table gives cross-reference parts and alternative options found for IPD50N06S409ATMA1. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IPD50N06S409ATMA1, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Description | Manufacturer | Compare |
|---|---|---|---|
| IPB090N06N3G | Power Field-Effect Transistor, 50A I(D), 60V, 0.009ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, GREEN, PLASTIC, TO-263, D2PAK-3 | Infineon Technologies AG | IPD50N06S409ATMA1 vs IPB090N06N3G |
| IPD50N06S4-09 | Power Field-Effect Transistor, 50A I(D), 60V, 0.009ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, GREEN, PLASTIC PACKAGE-3 | Infineon Technologies AG | IPD50N06S409ATMA1 vs IPD50N06S4-09 |
| IPD50N06S309ATMA1 | Power Field-Effect Transistor, 50A I(D), 55V, 0.009ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, GREEN, PLASTIC PACKAGE-3 | Infineon Technologies AG | IPD50N06S409ATMA1 vs IPD50N06S309ATMA1 |
| AON7244 | Power Field-Effect Transistor, 50A I(D), 60V, 0.0085ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, 3.30 X 3.30 MM, GREEN, EP, DFN-8 | Alpha & Omega Semiconductor | IPD50N06S409ATMA1 vs AON7244 |
| IPB090N06N3GATMA1 | Power Field-Effect Transistor, 50A I(D), 60V, 0.009ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, GREEN, PLASTIC, TO-263, D2PAK-3 | Infineon Technologies AG | IPD50N06S409ATMA1 vs IPB090N06N3GATMA1 |