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Transistors / Power Field-Effect Transistors / IPD530N15N3GATMA1
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IPD530N15N3GATMA1 by: Infineon Technologies AG

Power Field-Effect Transistor, 21A I(D), 150V, 0.053ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, GREEN, PLASTIC PACKAGE-3/2

Part Details for IPD530N15N3GATMA1 by Infineon Technologies AG

Overview of IPD530N15N3GATMA1 by Infineon Technologies AG

Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.

Price & Stock for IPD530N15N3GATMA1

Part # Distributor Description Stock Price Buy
DISTI # 79X1437
Newark Mosfet, N-Ch, 150V, 21A, To-252, Channel Type:N Channel, Drain Source Voltage Vds:150V, Continuous Drain Current Id:21A, Transistor Mounting:Surface Mount, Rds(On) Test Voltage:10V, Gate Source Threshold Voltage Max:3V Rohs Compliant: Yes |Infineon IPD530N15N3GATMA1 Min Qty: 1 Package Multiple: 1 Date Code: 0 Container: Cut Tape 419
  • 1 $0.8330
  • 10 $0.8330
  • 25 $0.7640
  • 50 $0.7640
  • 100 $0.7640
  • 250 $0.7640
  • 500 $0.7050
$0.7050 / $0.8330 Buy Now
DISTI # 86AK5220
Newark Mosfet, N-Ch, 150V, 21A, To-252 Rohs Compliant: Yes |Infineon IPD530N15N3GATMA1 Min Qty: 2500 Package Multiple: 1 Date Code: 1 Container: Reel 0
  • 2,500 $0.7230
  • 5,000 $0.7090
  • 10,000 $0.6980
  • 15,000 $0.6850
$0.6850 / $0.7230 Buy Now
DISTI # IPD530N15N3GATMA1CT-ND
DigiKey MOSFET N-CH 150V 21A TO252-3 Min Qty: 1 Lead time: 18 Weeks Container: Cut Tape (CT), Digi-Reel®, Tape & Reel (TR) 2440
In Stock
  • 1 $1.5700
  • 10 $1.3060
  • 100 $1.0393
  • 500 $0.8794
  • 1,000 $0.7462
  • 2,500 $0.7089
  • 5,000 $0.6822
  • 12,500 $0.6596
$0.6596 / $1.5700 Buy Now
DISTI # IPD530N15N3GATMA1
Avnet Americas MV POWER MOS - Tape and Reel (Alt: IPD530N15N3GATMA1) RoHS: Not Compliant Min Qty: 2500 Package Multiple: 2500 Lead time: 18 Weeks, 0 Days Container: Reel 0
  • 2,500 $0.7257
  • 5,000 $0.7037
  • 10,000 $0.6817
  • 15,000 $0.6597
  • 20,000 $0.6377
  • 25,000 $0.6157
  • 250,000 $0.5937
$0.5937 / $0.7257 Buy Now
DISTI # 79X1437
Avnet Americas MV POWER MOS - Product that comes on tape, but is not reeled (Alt: 79X1437) RoHS: Not Compliant Min Qty: 1 Package Multiple: 1 Lead time: 17 Weeks, 5 Days Container: Ammo Pack 419 Partner Stock
  • 1 $1.5200
  • 10 $1.2700
  • 25 $1.1900
  • 50 $1.1100
  • 100 $1.0300
$1.0300 / $1.5200 Buy Now
DISTI # 726-IPD530N15N3GATMA
Mouser Electronics MOSFET TRENCH >=100V RoHS: Compliant 31173
  • 1 $1.4600
  • 10 $1.1700
  • 100 $0.9880
  • 250 $0.9590
  • 500 $0.8260
  • 1,000 $0.6760
  • 2,500 $0.6590
  • 10,000 $0.6490
$0.6490 / $1.4600 Buy Now
DISTI # V72:2272_13979485
Arrow Electronics Trans MOSFET N-CH 150V 21A 3-Pin(2+Tab) DPAK T/R Min Qty: 1 Package Multiple: 1 Lead time: 18 Weeks Date Code: 2324 Container: Cut Strips Americas - 2426
  • 1 $1.3245
  • 10 $1.0825
  • 25 $1.0721
  • 100 $0.9230
  • 250 $0.8802
  • 500 $0.7606
  • 1,000 $0.6020
$0.6020 / $1.3245 Buy Now
Future Electronics N-Channel 150 V 53 mOhm 12 nC OptiMOS™3 Power-Transistor - PG-TO252-3-11 RoHS: Compliant pbFree: Yes Min Qty: 2500 Package Multiple: 2500 Lead time: 20 Weeks Container: Reel 2500
Reel
  • 2,500 $0.6300
  • 5,000 $0.6200
  • 7,500 $0.6100
  • 10,000 $0.6050
  • 12,500 $0.5900
$0.5900 / $0.6300 Buy Now
Future Electronics N-Channel 150 V 53 mOhm 12 nC OptiMOS™3 Power-Transistor - PG-TO252-3-11 RoHS: Compliant pbFree: Yes Min Qty: 2500 Package Multiple: 2500 Lead time: 20 Weeks Container: Reel 0
Reel
  • 2,500 $0.6200
  • 5,000 $0.6100
  • 7,500 $0.6000
  • 10,000 $0.5900
$0.5900 / $0.6200 Buy Now
DISTI # 69266938
Verical Trans MOSFET N-CH 150V 21A 3-Pin(2+Tab) DPAK T/R Min Qty: 30 Package Multiple: 1 Date Code: 2238 Americas - 2470
  • 30 $1.0600
  • 50 $1.0100
  • 100 $0.8438
  • 200 $0.8113
  • 500 $0.8088
  • 1,000 $0.6063
$0.6063 / $1.0600 Buy Now
DISTI # 71281554
Verical Trans MOSFET N-CH 150V 21A 3-Pin(2+Tab) DPAK T/R Min Qty: 11 Package Multiple: 1 Date Code: 2324 Americas - 2426
  • 1,000 $0.6020
$0.6020 Buy Now
DISTI # 62327648
Verical Trans MOSFET N-CH 150V 21A 3-Pin(2+Tab) DPAK T/R Min Qty: 36 Package Multiple: 1 Date Code: 2128 Americas - 129
  • 36 $0.8800
  • 50 $0.8513
  • 100 $0.7850
$0.7850 / $0.8800 Buy Now
Quest Components POWER FIELD-EFFECT TRANSISTOR, 21A I(D), 150V, 0.053OHM, 1-ELEMENT, N-CHANNEL, SILICON, METAL-OXIDE SEMICONDUCTOR FET, TO-252 49
  • 1 $1.2039
  • 5 $1.0033
  • 16 $0.7223
$0.7223 / $1.2039 Buy Now
Ameya Holding Limited   Min Qty: 2500 12425
  • 2,500 $0.8150
  • 12,500 $0.7906
$0.7906 / $0.8150 Buy Now
DISTI # C1S322000840850
Chip1Stop MOSFET RoHS: Compliant Container: Cut Tape 2470
  • 1 $0.8590
  • 10 $0.8480
  • 50 $0.8080
  • 100 $0.6750
  • 200 $0.6490
  • 500 $0.6470
  • 1,000 $0.4850
$0.4850 / $0.8590 Buy Now
DISTI # C1S322001034599
Chip1Stop MOSFET RoHS: Compliant Container: Cut Tape 129
  • 1 $0.8230
  • 10 $0.7040
  • 50 $0.6810
  • 100 $0.6280
$0.6280 / $0.8230 Buy Now
DISTI # SP001127830
EBV Elektronik MV POWER MOS (Alt: SP001127830) RoHS: Compliant Min Qty: 2500 Package Multiple: 2500 Lead time: 19 Weeks, 0 Days EBV - 0
Buy Now

Part Details for IPD530N15N3GATMA1

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IPD530N15N3GATMA1 Part Data Attributes

Parametric Data
IPD530N15N3GATMA1 Infineon Technologies AG
Buy Now Datasheet
Compare Parts:
IPD530N15N3GATMA1 Infineon Technologies AG Power Field-Effect Transistor, 21A I(D), 150V, 0.053ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, GREEN, PLASTIC PACKAGE-3/2
Rohs Code Yes
Part Life Cycle Code Active
Ihs Manufacturer INFINEON TECHNOLOGIES AG
Package Description SMALL OUTLINE, R-PSSO-G2
Reach Compliance Code not_compliant
ECCN Code EAR99
Factory Lead Time 17 Weeks, 5 Days
Samacsys Manufacturer Infineon
Avalanche Energy Rating (Eas) 60 mJ
Case Connection DRAIN
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 150 V
Drain Current-Max (ID) 21 A
Drain-source On Resistance-Max 0.053 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code TO-252
JESD-30 Code R-PSSO-G2
JESD-609 Code e3
Moisture Sensitivity Level 1
Number of Elements 1
Number of Terminals 2
Operating Mode ENHANCEMENT MODE
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Peak Reflow Temperature (Cel) NOT SPECIFIED
Polarity/Channel Type N-CHANNEL
Pulsed Drain Current-Max (IDM) 84 A
Surface Mount YES
Terminal Finish Tin (Sn)
Terminal Form GULL WING
Terminal Position SINGLE
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Transistor Application SWITCHING
Transistor Element Material SILICON

Alternate Parts for IPD530N15N3GATMA1

This table gives cross-reference parts and alternative options found for IPD530N15N3GATMA1. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IPD530N15N3GATMA1, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
BSC520N15NS3GATMA1 Power Field-Effect Transistor, 21A I(D), 150V, 0.052ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC, TDSON-8 Infineon Technologies AG IPD530N15N3GATMA1 vs BSC520N15NS3GATMA1
IPB530N15N3GATMA1 Power Field-Effect Transistor, 21A I(D), 150V, 0.053ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, GREEN, PLASTIC, TO-263, 3 PIN Infineon Technologies AG IPD530N15N3GATMA1 vs IPB530N15N3GATMA1
BSZ520N15NS3GATMA1 Power Field-Effect Transistor, 21A I(D), 150V, 0.052ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC, TSDSON-8 Infineon Technologies AG IPD530N15N3GATMA1 vs BSZ520N15NS3GATMA1

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