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Power Field-Effect Transistor, 60A I(D), 100V, 0.015ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, GREEN, PLASTIC PACKAGE-3/2
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
13AC9043
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Newark | Mosfet, N-Ch, 100V, 60A, 175Deg C, 94W, Channel Type:N Channel, Drain Source Voltage Vds:100V, Continuous Drain Current Id:60A, Transistor Mounting:Surface Mount, Rds(On) Test Voltage:10V, Gate Source Threshold Voltage Max:1.6V Rohs Compliant: Yes |Infineon IPD60N10S4L12ATMA1 Min Qty: 5 Package Multiple: 1 Date Code: 1 Container: Cut Tape | 9874 |
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$0.9970 / $1.6500 | Buy Now |
DISTI #
86AK5221
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Newark | Mosfet, N-Ch, 100V, 60A, To-252 Rohs Compliant: Yes |Infineon IPD60N10S4L12ATMA1 Min Qty: 2500 Package Multiple: 1 Date Code: 1 Container: Reel | 0 |
|
$0.7840 / $0.8280 | Buy Now |
DISTI #
IPD60N10S4L12ATMA1CT-ND
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DigiKey | MOSFET N-CH 100V 60A TO252-3 Min Qty: 1 Lead time: 12 Weeks Container: Digi-Reel®, Cut Tape (CT), Tape & Reel (TR) |
71627 In Stock |
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$0.7546 / $1.2600 | Buy Now |
DISTI #
IPD60N10S4L12ATMA1
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Avnet Americas | Trans MOSFET N-CH 100V 60A 3-Pin TO-252 T/R - Tape and Reel (Alt: IPD60N10S4L12ATMA1) RoHS: Not Compliant Min Qty: 2500 Package Multiple: 2500 Lead time: 12 Weeks, 0 Days Container: Reel | 25000 |
|
$0.9357 | Buy Now |
DISTI #
726-IPD60N10S4L12ATM
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Mouser Electronics | MOSFET N-Ch 100V 60A DPAK-2 RoHS: Compliant | 2219 |
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$0.7540 / $1.2100 | Buy Now |
DISTI #
V72:2272_06384117
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Arrow Electronics | Trans MOSFET N-CH 100V 60A Automotive AEC-Q101 3-Pin(2+Tab) DPAK T/R Min Qty: 1 Package Multiple: 1 Lead time: 12 Weeks Date Code: 2237 Container: Cut Strips | Americas - 3478 |
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$0.8104 / $1.0090 | Buy Now |
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Future Electronics | IPD60N10S4L Series 100 V 60 A OptiMOSTM-T2 Power-Transistor - PG-TO-252-3-313 RoHS: Compliant pbFree: Yes Min Qty: 2500 Package Multiple: 2500 Container: Reel | 0Reel |
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$0.7800 / $0.8100 | Buy Now |
DISTI #
69267767
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Verical | Trans MOSFET N-CH 100V 60A Automotive AEC-Q101 3-Pin(2+Tab) DPAK T/R Min Qty: 36 Package Multiple: 1 Date Code: 2247 | Americas - 4938 |
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$0.7137 / $0.8800 | Buy Now |
DISTI #
66242985
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Verical | Trans MOSFET N-CH 100V 60A Automotive AEC-Q101 3-Pin(2+Tab) DPAK T/R Min Qty: 8 Package Multiple: 1 Date Code: 2237 | Americas - 3478 |
|
$0.8104 / $1.0090 | Buy Now |
DISTI #
IPD60N10S4L12ATMA1
|
Avnet Americas | Trans MOSFET N-CH 100V 60A 3-Pin TO-252 T/R - Tape and Reel (Alt: IPD60N10S4L12ATMA1) RoHS: Not Compliant Min Qty: 2500 Package Multiple: 2500 Lead time: 12 Weeks, 0 Days Container: Reel | 25000 |
|
$0.9357 | Buy Now |
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IPD60N10S4L12ATMA1
Infineon Technologies AG
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Datasheet
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Compare Parts:
IPD60N10S4L12ATMA1
Infineon Technologies AG
Power Field-Effect Transistor, 60A I(D), 100V, 0.015ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, GREEN, PLASTIC PACKAGE-3/2
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Rohs Code | Yes | |
Part Life Cycle Code | Active | |
Ihs Manufacturer | INFINEON TECHNOLOGIES AG | |
Package Description | SMALL OUTLINE, R-PSSO-G2 | |
Reach Compliance Code | not_compliant | |
ECCN Code | EAR99 | |
Factory Lead Time | 12 Weeks | |
Samacsys Manufacturer | Infineon | |
Avalanche Energy Rating (Eas) | 120 mJ | |
Case Connection | DRAIN | |
Configuration | SINGLE WITH BUILT-IN DIODE | |
DS Breakdown Voltage-Min | 100 V | |
Drain Current-Max (ID) | 60 A | |
Drain-source On Resistance-Max | 0.015 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
JEDEC-95 Code | TO-252 | |
JESD-30 Code | R-PSSO-G2 | |
JESD-609 Code | e3 | |
Moisture Sensitivity Level | 1 | |
Number of Elements | 1 | |
Number of Terminals | 2 | |
Operating Mode | ENHANCEMENT MODE | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | SMALL OUTLINE | |
Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
Polarity/Channel Type | N-CHANNEL | |
Pulsed Drain Current-Max (IDM) | 240 A | |
Reference Standard | AEC-Q101 | |
Surface Mount | YES | |
Terminal Finish | Tin (Sn) | |
Terminal Form | GULL WING | |
Terminal Position | SINGLE | |
Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
Transistor Element Material | SILICON |