Part Details for IPD70N10S312ATMA1 by Infineon Technologies AG
Overview of IPD70N10S312ATMA1 by Infineon Technologies AG
- Distributor Offerings: (7 listings)
- Number of FFF Equivalents: (1 cross)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Applications
Consumer Electronics
Energy and Power Systems
Renewable Energy
Price & Stock for IPD70N10S312ATMA1
| Part # | Distributor | Description | Stock | Price | Buy | |
|---|---|---|---|---|---|---|
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DISTI #
29AK0355
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Newark | Mosfet, N Ch, 100V, 70A, To-252-3, Transistor Polarity:N Channel, Continuous Drain Current Id:70A, Drain Source Voltage Vds:100V, On Resistance Rds(On):0.0092Ohm, Rds(On) Test Voltage Vgs:10V, Threshold Voltage Vgs:3V, Power Rohs Compliant: Yes |Infineon IPD70N10S312ATMA1 Min Qty: 1 Package Multiple: 1 Date Code: 0 Container: Cut Tape | 0 |
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$0.5970 | Buy Now |
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DISTI #
IPD70N10S312ATMA1CT-ND
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DigiKey | MOSFET N-CH 100V 70A TO252-3 Min Qty: 1 Lead time: 12 Weeks Container: Cut Tape (CT), Digi-Reel®, Tape & Reel (TR) |
11076 In Stock |
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$1.0385 / $2.3900 | Buy Now |
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DISTI #
E02:0323_00275609
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Arrow Electronics | Trans MOSFET N-CH 100V 70A Automotive AEC-Q101 3-Pin(2+Tab) DPAK T/R Min Qty: 2500 Package Multiple: 2500 Lead time: 12 Weeks Date Code: 2303 | Europe - 2500 |
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$0.9907 / $1.0214 | Buy Now |
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DISTI #
V72:2272_06384374
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Arrow Electronics | Trans MOSFET N-CH 100V 70A Automotive AEC-Q101 3-Pin(2+Tab) DPAK T/R Min Qty: 1 Package Multiple: 1 Lead time: 12 Weeks Date Code: 2229 Container: Cut Strips | Americas - 1959 |
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$1.0782 / $1.6123 | Buy Now |
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Future Electronics | Single N-Channel 100 V 11.1 mOhm 51 nC OptiMOS™ Power Mosfet - TO-252-3-11 RoHS: Compliant pbFree: Yes Min Qty: 2500 Package Multiple: 2500 Container: Reel | 2500Reel |
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$0.7550 | Buy Now |
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New Advantage Corporation | Single N-Channel 100 V 11.1 mOhm 51 nC OptiMOS� Power Mosfet - TO-252-3-11 RoHS: Compliant Min Qty: 1 Package Multiple: 2500 | 5000 |
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$1.0100 / $1.0800 | Buy Now |
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Win Source Electronics | MOSFET N-CH 100V 70A TO252-3 | 118000 |
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$1.1310 / $1.6960 | Buy Now |
Part Details for IPD70N10S312ATMA1
IPD70N10S312ATMA1 CAD Models
IPD70N10S312ATMA1 Part Data Attributes:
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IPD70N10S312ATMA1
Infineon Technologies AG
Buy Now
Datasheet
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Compare Parts:
IPD70N10S312ATMA1
Infineon Technologies AG
Power Field-Effect Transistor, 70A I(D), 100V, 0.0111ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, GREEN, PLASTIC PACKAGE-3/2
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| Rohs Code | Yes | |
| Part Life Cycle Code | Not Recommended | |
| Ihs Manufacturer | INFINEON TECHNOLOGIES AG | |
| Package Description | SMALL OUTLINE, R-PSSO-G2 | |
| Reach Compliance Code | not_compliant | |
| ECCN Code | EAR99 | |
| HTS Code | 8541.29.00.95 | |
| Samacsys Manufacturer | Infineon | |
| Avalanche Energy Rating (Eas) | 410 mJ | |
| Case Connection | DRAIN | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 100 V | |
| Drain Current-Max (ID) | 70 A | |
| Drain-source On Resistance-Max | 0.0111 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| Feedback Cap-Max (Crss) | 158 pF | |
| JEDEC-95 Code | TO-252 | |
| JESD-30 Code | R-PSSO-G2 | |
| JESD-609 Code | e3 | |
| Moisture Sensitivity Level | 1 | |
| Number of Elements | 1 | |
| Number of Terminals | 2 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 175 °C | |
| Operating Temperature-Min | -55 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 125 W | |
| Pulsed Drain Current-Max (IDM) | 280 A | |
| Reference Standard | AEC-Q101; IEC-68-1 | |
| Surface Mount | YES | |
| Terminal Finish | Tin (Sn) | |
| Terminal Form | GULL WING | |
| Terminal Position | SINGLE | |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
| Transistor Element Material | SILICON |
Alternate Parts for IPD70N10S312ATMA1
This table gives cross-reference parts and alternative options found for IPD70N10S312ATMA1. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IPD70N10S312ATMA1, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Description | Manufacturer | Compare |
|---|---|---|---|
| SP000427248 | Power Field-Effect Transistor, | Infineon Technologies AG | IPD70N10S312ATMA1 vs SP000427248 |