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Transistors Power Field-Effect Transistors IPD90N03S4L03ATMA1

IPD90N03S4L03ATMA1
Infineon Technologies AG
Description: Power Field-Effect Transistor, 90A I(D), 30V, 0.0033ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, GREEN, PLASTIC PACKAGE-3/2

Overview of IPD90N03S4L03ATMA1 by Infineon Technologies AG

Note: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
  • Distributor Offerings: ( 8 listings )
  • Number of FFF Equivalents: ( 0 replacements )
  • CAD Models: ( Request Part )
  • Number of Functional Equivalents: ( 0 options )
  • Part Data Attributes ( Available )
  • Reference Designs: ( Not Available )
Where used in Applications: Consumer Electronics Energy and Power Systems Renewable Energy

Price & Stock for IPD90N03S4L03ATMA1 by Infineon Technologies AG

Part # Manufacturer Description Stock Price Buy
DISTI # 50Y2043
Newark Mosfet Transistor, N Channel, 90 A, 30 V, 0.0025 Ohm, 10 V, 1.6 V Rohs Compliant: Yes |Infineon IPD90N03S4L03ATMA1 RoHS: Compliant Min Qty: 1 Package Multiple: 1 Date Code: 0 Container: Cut Tape 0
Buy Now
DISTI # IPD90N03S4L03ATMA1
Avnet Americas Trans MOSFET N-CH 30V 90A 3-Pin(2+Tab) TO-252 - Tape and Reel (Alt: IPD90N03S4L03ATMA1) RoHS: Compliant Min Qty: 423 Package Multiple: 1 Lead time: 4 Weeks, 0 Days Container: Reel 3094 Partner Stock
  • 1 $0.8628
$0.8628 Buy Now
DISTI # IPD90N03S4L03ATMA1
Avnet Americas Trans MOSFET N-CH 30V 90A 3-Pin(2+Tab) TO-252 - Tape and Reel (Alt: IPD90N03S4L03ATMA1) RoHS: Not Compliant Min Qty: 2500 Package Multiple: 2500 Lead time: 12 Weeks, 0 Days Container: Reel 0
RFQ
DISTI # 726-IPD90N03S4L03ATM
Mouser Electronics MOSFETs N-Ch 30V 90A DPAK-2 OptiMOS-T2 RoHS: Compliant 5014
  • 1 $1.7500
  • 10 $1.4600
  • 100 $1.1600
  • 250 $1.0700
  • 500 $0.9760
  • 1,000 $0.8700
  • 2,500 $0.7390
  • 10,000 $0.7350
$0.7350 / $1.7500 Buy Now
Future Electronics IPD90N03S4L Series 30 V 3.3 mOhm 90 A OptiMOS®-T2 Power-Transistor-PG-TO252-3-11 RoHS: Compliant pbFree: Yes Min Qty: 2500 Package Multiple: 2500 Container: Reel 2500
Reel
  • 2,500 $0.6600
  • 5,000 $0.6350
$0.6350 / $0.6600 Buy Now
Rochester Electronics IPD90N03 - 20V-40V N-Channel Automotive MOSFET RoHS: Compliant Status: Obsolete Min Qty: 1 3094
  • 1 $0.8628
  • 25 $0.8455
  • 100 $0.8110
  • 500 $0.7765
  • 1,000 $0.7334
$0.7334 / $0.8628 Buy Now
ComSIT USA OPTIMOS-T2 POWER-TRANSISTOR Power Field-Effect Transistor, 90A I(D), 30V, 0.0033ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252 RoHS: Not Compliant Stock EU - 250
Stock US - 0
Stock MX - 0
Stock CN - 0
Stock HK - 0
RFQ
New Advantage Corporation   RoHS: Compliant Min Qty: 1 Package Multiple: 2500 5000
  • 2,500 $0.9071
  • 5,000 $0.8467
$0.8467 / $0.9071 Buy Now

CAD Models for IPD90N03S4L03ATMA1 by Infineon Technologies AG
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There are no models available for this part yet.

Part Data Attributes for IPD90N03S4L03ATMA1 by Infineon Technologies AG
Parametric Data

IPD90N03S4L03ATMA1
Infineon Technologies AG
Buy Now
-
-
Rohs Code
Yes
Part Life Cycle Code
Active
Ihs Manufacturer
INFINEON TECHNOLOGIES AG
Package Description
GREEN, PLASTIC PACKAGE-3/2
Reach Compliance Code
not_compliant
ECCN Code
EAR99
Factory Lead Time
4 Weeks
Samacsys Manufacturer
Infineon
Avalanche Energy Rating (Eas)
85 mJ
Case Connection
DRAIN
Configuration
SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min
30 V
Drain Current-Max (ID)
90 A
Drain-source On Resistance-Max
0.0033 Ω
FET Technology
METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code
TO-252
JESD-30 Code
R-PSSO-G2
JESD-609 Code
e3
Moisture Sensitivity Level
1
Number of Elements
1
Number of Terminals
2
Operating Mode
ENHANCEMENT MODE
Package Body Material
PLASTIC/EPOXY
Package Shape
RECTANGULAR
Package Style
SMALL OUTLINE
Peak Reflow Temperature (Cel)
NOT SPECIFIED
Polarity/Channel Type
N-CHANNEL
Pulsed Drain Current-Max (IDM)
360 A
Reference Standard
AEC-Q101
Surface Mount
YES
Terminal Finish
Tin (Sn)
Terminal Form
GULL WING
Terminal Position
SINGLE
Time@Peak Reflow Temperature-Max (s)
NOT SPECIFIED
Transistor Element Material
SILICON
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  1. IPD90N03S4L03ATMA1
    Infineon Technologies AG
    Power Field-Effect Transistor, 90A I(D), 30V, 0.0033ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, GREEN, PLASTIC PACKAGE-3/2
    VS

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