Part Details for IPDD60R102G7 by Infineon Technologies AG
Overview of IPDD60R102G7 by Infineon Technologies AG
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Applications
Consumer Electronics
Energy and Power Systems
Transportation and Logistics
Renewable Energy
Automotive
Part Details for IPDD60R102G7
IPDD60R102G7 CAD Models
IPDD60R102G7 Part Data Attributes
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IPDD60R102G7
Infineon Technologies AG
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Datasheet
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IPDD60R102G7
Infineon Technologies AG
Power Field-Effect Transistor,
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Rohs Code | Yes | |
Part Life Cycle Code | Active | |
Ihs Manufacturer | INFINEON TECHNOLOGIES AG | |
Package Description | SMALL OUTLINE, R-PDSO-G10 | |
Reach Compliance Code | compliant | |
ECCN Code | EAR99 | |
Avalanche Energy Rating (Eas) | 78 mJ | |
Configuration | SINGLE WITH BUILT-IN DIODE | |
DS Breakdown Voltage-Min | 600 V | |
Drain Current-Max (ID) | 23 A | |
Drain-source On Resistance-Max | 0.102 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
JEDEC-95 Code | TO-252 | |
JESD-30 Code | R-PDSO-G10 | |
JESD-609 Code | e3 | |
Moisture Sensitivity Level | 1 | |
Number of Elements | 1 | |
Number of Terminals | 10 | |
Operating Mode | ENHANCEMENT MODE | |
Operating Temperature-Max | 150 °C | |
Operating Temperature-Min | -55 °C | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | SMALL OUTLINE | |
Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
Polarity/Channel Type | N-CHANNEL | |
Power Dissipation-Max (Abs) | 139 W | |
Pulsed Drain Current-Max (IDM) | 66 A | |
Surface Mount | YES | |
Terminal Finish | Tin (Sn) | |
Terminal Form | GULL WING | |
Terminal Position | DUAL | |
Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
Transistor Application | SWITCHING | |
Transistor Element Material | SILICON |
Alternate Parts for IPDD60R102G7
This table gives cross-reference parts and alternative options found for IPDD60R102G7. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IPDD60R102G7, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number | Description | Manufacturer | Compare |
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IPDD60R102G7XTMA1 | Power Field-Effect Transistor, | Infineon Technologies AG | IPDD60R102G7 vs IPDD60R102G7XTMA1 |