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Part Details for IPG20N04S409ATMA1 by Infineon Technologies AG
Overview of IPG20N04S409ATMA1 by Infineon Technologies AG
- Distributor Offerings: (8 listings)
- Number of FFF Equivalents: (0 crosses)
- CAD Models: (Available)
- Number of Functional Equivalents: (3 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Price & Stock for IPG20N04S409ATMA1
| Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
49AC0299
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Newark | Mosfet, Aec-Q101, N-Ch, 40V, Tdson, Transistor Polarity:N Channel, Continuous Drain Current Id:20A, Drain Source Voltage Vds:40V, On Resistance Rds(On):0.0079Ohm, Rds(On) Test Voltage Vgs:10V, Threshold Voltage Vgs:3V, Power Rohs Compliant: Yes |Infineon IPG20N04S409ATMA1 Min Qty: 1 Package Multiple: 1 Date Code: 1 Container: Cut Tape | 0 |
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Buy Now | |
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DISTI #
71241853
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Verical | Trans MOSFET N-CH 40V 20A Automotive AEC-Q101 8-Pin TDSON EP T/R Min Qty: 30 Package Multiple: 1 Date Code: 2312 | Americas - 4905 |
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$0.6175 / $1.0775 | Buy Now |
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Rochester Electronics | IPG20N04 - 20V-40V N-Channel Automotive MOSFET ' RoHS: Compliant Status: Obsolete Min Qty: 1 | 62563 |
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$0.6052 / $0.7120 | Buy Now |
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DISTI #
IPG20N04S409
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TME | Transistor: N-MOSFET x2, OptiMOS™ T2, unipolar, 40V, 20A, 54W Min Qty: 1 | 0 |
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$0.5380 / $0.8170 | RFQ |
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Ameya Holding Limited | Min Qty: 5000 | 15000 |
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$1.5827 / $1.6670 | Buy Now |
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ComSIT USA | OPTIMOS-T2 POWER-TRANSISTOR Power Field-Effect Transistor, 20A I(D), 40V, 0.0086ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET RoHS: Compliant | Europe - 105 |
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RFQ | |
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DISTI #
C1S322001036667
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Chip1Stop | MOSFET RoHS: Compliant pbFree: No Container: Cut Tape | 4905 |
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$0.4940 / $1.7600 | Buy Now |
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Flip Electronics | Stock | 220000 |
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RFQ |
Part Details for IPG20N04S409ATMA1
IPG20N04S409ATMA1 CAD Models
IPG20N04S409ATMA1 Part Data Attributes
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IPG20N04S409ATMA1
Infineon Technologies AG
Buy Now
Datasheet
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Compare Parts:
IPG20N04S409ATMA1
Infineon Technologies AG
Power Field-Effect Transistor, 20A I(D), 40V, 0.0086ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC, TDSON-8
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| Rohs Code | Yes | |
| Part Life Cycle Code | Obsolete | |
| Ihs Manufacturer | INFINEON TECHNOLOGIES AG | |
| Package Description | GREEN, PLASTIC, TDSON-8 | |
| Reach Compliance Code | not_compliant | |
| ECCN Code | EAR99 | |
| Factory Lead Time | 52 Weeks | |
| Samacsys Manufacturer | Infineon | |
| Avalanche Energy Rating (Eas) | 145 mJ | |
| Configuration | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 40 V | |
| Drain Current-Max (ID) | 20 A | |
| Drain-source On Resistance-Max | 0.0086 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JESD-30 Code | R-PDSO-F8 | |
| JESD-609 Code | e3 | |
| Moisture Sensitivity Level | 1 | |
| Number of Elements | 2 | |
| Number of Terminals | 8 | |
| Operating Mode | ENHANCEMENT MODE | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
| Polarity/Channel Type | N-CHANNEL | |
| Pulsed Drain Current-Max (IDM) | 80 A | |
| Reference Standard | AEC-Q101 | |
| Surface Mount | YES | |
| Terminal Finish | Tin (Sn) | |
| Terminal Form | FLAT | |
| Terminal Position | DUAL | |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
| Transistor Element Material | SILICON |
Alternate Parts for IPG20N04S409ATMA1
This table gives cross-reference parts and alternative options found for IPG20N04S409ATMA1. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IPG20N04S409ATMA1, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Description | Manufacturer | Compare |
|---|---|---|---|
| IPG20N04S4-12A | Power Field-Effect Transistor | Infineon Technologies AG | IPG20N04S409ATMA1 vs IPG20N04S4-12A |
| AUIRFN8458TR | Power Field-Effect Transistor, | Infineon Technologies AG | IPG20N04S409ATMA1 vs AUIRFN8458TR |
| IPG20N04S412ATMA1 | Power Field-Effect Transistor, 20A I(D), 40V, 0.0122ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC, TDSON-8 | Infineon Technologies AG | IPG20N04S409ATMA1 vs IPG20N04S412ATMA1 |