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Part Details for IPG20N06S2L65AATMA1 by Infineon Technologies AG
Overview of IPG20N06S2L65AATMA1 by Infineon Technologies AG
- Distributor Offerings: (6 listings)
- Number of FFF Equivalents: (0 crosses)
- CAD Models: (Available)
- Number of Functional Equivalents: (1 option)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Price & Stock for IPG20N06S2L65AATMA1
| Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
34AC1697
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Newark | Mosfet, Aec-Q101, Dual N-Ch, 20A, Tdson, Channel Type:N Channel, Drain Source Voltage Vds N Channel:55V, Drain Source Voltage Vds P Channel:55V, Continuous Drain Current Id N Channel:20A, Continuous Drain Current Id P Channel:20A Rohs Compliant: Yes |Infineon IPG20N06S2L65AATMA1 Min Qty: 1 Package Multiple: 1 Date Code: 1 Container: Cut Tape | 0 |
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$0.5810 | Buy Now |
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DISTI #
IPG20N06S2L65AATMA1CT-ND
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DigiKey | MOSFET 2N-CH 55V 20A 8TDSON Min Qty: 1 Lead time: 12 Weeks Container: Digi-Reel®, Cut Tape (CT), Tape & Reel (TR) |
13998 In Stock |
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$0.4147 / $1.1000 | Buy Now |
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DISTI #
726-IPG20N06S2L65AAT
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Mouser Electronics | MOSFET MOSFET RoHS: Compliant | 0 |
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$0.4140 / $1.1000 | Order Now |
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Rochester Electronics | IPG20N06 - 55V-60V N-Channel Automotive MOSFET RoHS: Compliant Status: Active Min Qty: 1 | 23349 |
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$0.4105 / $0.4829 | Buy Now |
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CHIPMALL.COM LIMITED | 780 |
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$0.6076 | Buy Now | |
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DISTI #
SP001023844
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EBV Elektronik | Trans MOSFET N-CH 55V 20A 8-Pin TDSON T/R (Alt: SP001023844) RoHS: Compliant Min Qty: 5000 Package Multiple: 5000 Lead time: 13 Weeks, 0 Days | EBV - 0 |
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Buy Now |
Part Details for IPG20N06S2L65AATMA1
IPG20N06S2L65AATMA1 CAD Models
IPG20N06S2L65AATMA1 Part Data Attributes
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IPG20N06S2L65AATMA1
Infineon Technologies AG
Buy Now
Datasheet
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Compare Parts:
IPG20N06S2L65AATMA1
Infineon Technologies AG
Power Field-Effect Transistor, 20A I(D), 55V, 0.065ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TDSON-8
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| Rohs Code | Yes | |
| Part Life Cycle Code | Active | |
| Ihs Manufacturer | INFINEON TECHNOLOGIES AG | |
| Package Description | TDSON-8 | |
| Reach Compliance Code | not_compliant | |
| ECCN Code | EAR99 | |
| Factory Lead Time | 12 Weeks | |
| Samacsys Manufacturer | Infineon | |
| Avalanche Energy Rating (Eas) | 40 mJ | |
| Configuration | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 55 V | |
| Drain Current-Max (ID) | 20 A | |
| Drain-source On Resistance-Max | 0.065 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| Feedback Cap-Max (Crss) | 50 pF | |
| JESD-30 Code | R-PDSO-F8 | |
| JESD-609 Code | e3 | |
| Moisture Sensitivity Level | 1 | |
| Number of Elements | 2 | |
| Number of Terminals | 8 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 175 °C | |
| Operating Temperature-Min | -55 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 43 W | |
| Pulsed Drain Current-Max (IDM) | 80 A | |
| Reference Standard | AEC-Q101 | |
| Surface Mount | YES | |
| Terminal Finish | Tin (Sn) | |
| Terminal Form | FLAT | |
| Terminal Position | DUAL | |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
| Transistor Element Material | SILICON |
Alternate Parts for IPG20N06S2L65AATMA1
This table gives cross-reference parts and alternative options found for IPG20N06S2L65AATMA1. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IPG20N06S2L65AATMA1, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Description | Manufacturer | Compare |
|---|---|---|---|
| IPG20N06S2L-65A | Power Field-Effect Transistor | Infineon Technologies AG | IPG20N06S2L65AATMA1 vs IPG20N06S2L-65A |