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Part Details for IPG20N10S436AATMA1 by Infineon Technologies AG
Results Overview of IPG20N10S436AATMA1 by Infineon Technologies AG
- Distributor Offerings: (6 listings)
- Number of FFF Equivalents: (0 replacements)
- Tariff Estimator: (Not Available)
- Number of Functional Equivalents: (3 options)
- CAD Models: (Available)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
IPG20N10S436AATMA1 Information
IPG20N10S436AATMA1 by Infineon Technologies AG is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Price & Stock for IPG20N10S436AATMA1
| Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
39AH8915
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Newark | Mosfet, Dual N-Ch, 100V, 20A, Tdson Rohs Compliant: Yes |Infineon IPG20N10S436AATMA1 RoHS: Compliant Min Qty: 1 Package Multiple: 1 Date Code: 1 Container: Cut Tape | 0 |
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$0.5830 / $1.8900 | Buy Now |
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DISTI #
IPG20N10S436AATMA1
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Avnet Americas | - Tape and Reel (Alt: IPG20N10S436AATMA1) COO: Malaysia RoHS: Compliant Min Qty: 5000 Package Multiple: 5000 Lead time: 12 Weeks, 0 Days Container: Reel | 0 |
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$0.4915 / $0.5617 | Buy Now |
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Rochester Electronics | Power Field-Effect Transistor, 20A I(D), 100V, 0.036ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET RoHS: Compliant Status: Active Min Qty: 1 | 8202 |
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$0.4139 / $0.6676 | Buy Now |
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Chip Stock | 100V,DualN-Ch,36mΩmax,AutomotiveMOSFET,dualSS08(5x6),OptiMOS™-T2,PG-TDSON-8,RoHS | 25800 |
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RFQ | |
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DISTI #
SP001102930
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EBV Elektronik | (Alt: SP001102930) RoHS: Compliant Min Qty: 5000 Package Multiple: 5000 Lead time: 13 Weeks, 0 Days | EBV - 0 |
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Buy Now | |
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Win Source Electronics | MOSFET 2N-CH 100V 20A 8TDSON | 22300 |
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$0.7554 / $1.1330 | Buy Now |
Part Details for IPG20N10S436AATMA1
IPG20N10S436AATMA1 CAD Models
IPG20N10S436AATMA1 Part Data Attributes
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IPG20N10S436AATMA1
Infineon Technologies AG
Buy Now
Datasheet
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Compare Parts:
IPG20N10S436AATMA1
Infineon Technologies AG
Power Field-Effect Transistor, 20A I(D), 100V, 0.036ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TDSON-8-10, 8 PIN
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| Pbfree Code | Yes | |
| Rohs Code | Yes | |
| Part Life Cycle Code | Active | |
| Ihs Manufacturer | INFINEON TECHNOLOGIES AG | |
| Package Description | TDSON-8-10, 8 PIN | |
| Reach Compliance Code | Not Compliant | |
| ECCN Code | EAR99 | |
| Factory Lead Time | 12 Weeks | |
| Samacsys Manufacturer | Infineon | |
| Avalanche Energy Rating (Eas) | 60 mJ | |
| Case Connection | DRAIN | |
| Configuration | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 100 V | |
| Drain Current-Max (ID) | 20 A | |
| Drain-source On Resistance-Max | 0.036 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JESD-30 Code | R-PDSO-F8 | |
| JESD-609 Code | e3 | |
| Moisture Sensitivity Level | 1 | |
| Number of Elements | 2 | |
| Number of Terminals | 8 | |
| Operating Mode | ENHANCEMENT MODE | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| Polarity/Channel Type | N-CHANNEL | |
| Pulsed Drain Current-Max (IDM) | 80 A | |
| Reference Standard | AEC-Q101 | |
| Surface Mount | YES | |
| Terminal Finish | Tin (Sn) | |
| Terminal Form | FLAT | |
| Terminal Position | DUAL | |
| Transistor Element Material | SILICON |
Alternate Parts for IPG20N10S436AATMA1
This table gives cross-reference parts and alternative options found for IPG20N10S436AATMA1. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IPG20N10S436AATMA1, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Manufacturer | Composite Price | Description | Compare |
|---|---|---|---|---|
| BUK7K45-100EX | Nexperia | $0.9367 | BUK7K45-100E - Dual N-channel 100 V, 37.6 mΩ standard level MOSFET@en-us | IPG20N10S436AATMA1 vs BUK7K45-100EX |
| IPG20N10S4L-35A | Infineon Technologies AG | Check for Price | Power Field-Effect Transistor, 20A I(D), 100V, 0.035ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC, TDSON-8-10, 8 PIN | IPG20N10S436AATMA1 vs IPG20N10S4L-35A |
| IPG20N10S4-36A | Infineon Technologies AG | Check for Price | Power Field-Effect Transistor, 20A I(D), 100V, 0.036ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TDSON-8-10, 8 PIN | IPG20N10S436AATMA1 vs IPG20N10S4-36A |
IPG20N10S436AATMA1 Frequently Asked Questions (FAQ)
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The maximum operating temperature of the IPG20N10S436AATMA1 is 150°C, as specified in the datasheet. However, it's recommended to operate the device within a temperature range of 25°C to 125°C for optimal performance and reliability.
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To ensure proper thermal management, it's essential to provide a good thermal interface between the module and the heat sink. Apply a thin layer of thermal interface material (TIM) to the base plate of the module, and ensure the heat sink is properly mounted and secured. Additionally, ensure good airflow around the heat sink to dissipate heat efficiently.
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The recommended gate resistor value for the IPG20N10S436AATMA1 is typically between 10 ohms to 20 ohms. However, the optimal value may vary depending on the specific application and switching frequency. It's recommended to consult the datasheet and application notes for more information.
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Yes, the IPG20N10S436AATMA1 can be used in a parallel configuration to increase the current handling capability. However, it's essential to ensure that the modules are properly matched and synchronized to avoid uneven current sharing and thermal issues. Consult the datasheet and application notes for more information on parallel operation.
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The maximum allowable voltage transient for the IPG20N10S436AATMA1 is specified as 1200 V for a duration of 1.5 ms. However, it's recommended to limit the voltage transient to 1000 V or less to ensure reliable operation and prevent damage to the device.