Datasheets
IPI60R165CP by: Infineon Technologies AG

Power Field-Effect Transistor, 21A I(D), 600V, 0.165ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA, GREEN, PLASTIC, TO-262, 3 PIN

Part Details for IPI60R165CP by Infineon Technologies AG

Overview of IPI60R165CP by Infineon Technologies AG

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Applications Consumer Electronics Energy and Power Systems Renewable Energy

Part Details for IPI60R165CP

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IPI60R165CP Part Data Attributes

IPI60R165CP Infineon Technologies AG
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IPI60R165CP Infineon Technologies AG Power Field-Effect Transistor, 21A I(D), 600V, 0.165ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA, GREEN, PLASTIC, TO-262, 3 PIN
Pbfree Code Yes
Rohs Code Yes
Part Life Cycle Code Not Recommended
Ihs Manufacturer INFINEON TECHNOLOGIES AG
Part Package Code TO-262AA
Package Description GREEN, PLASTIC, TO-262, 3 PIN
Pin Count 3
Reach Compliance Code compliant
ECCN Code EAR99
Factory Lead Time 4 Weeks
Avalanche Energy Rating (Eas) 522 mJ
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 600 V
Drain Current-Max (ID) 21 A
Drain-source On Resistance-Max 0.165 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code TO-262AA
JESD-30 Code R-PSIP-T3
JESD-609 Code e3
Number of Elements 1
Number of Terminals 3
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 150 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style IN-LINE
Peak Reflow Temperature (Cel) NOT SPECIFIED
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 192 W
Pulsed Drain Current-Max (IDM) 61 A
Qualification Status Not Qualified
Surface Mount NO
Terminal Finish Tin (Sn)
Terminal Form THROUGH-HOLE
Terminal Position SINGLE
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Transistor Application SWITCHING
Transistor Element Material SILICON

Alternate Parts for IPI60R165CP

This table gives cross-reference parts and alternative options found for IPI60R165CP. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IPI60R165CP, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
IPI60R165CPXKSA1 Power Field-Effect Transistor, 21A I(D), 600V, 0.165ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA, GREEN, PLASTIC, TO-262, 3 PIN Infineon Technologies AG IPI60R165CP vs IPI60R165CPXKSA1
IPI60R165CPAKSA1 Power Field-Effect Transistor, 21A I(D), 600V, 0.165ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA, GREEN, PLASTIC, TO-262, 3 PIN Infineon Technologies AG IPI60R165CP vs IPI60R165CPAKSA1
Part Number Description Manufacturer Compare
LSB20N65F Power Field-Effect Transistor, 20A I(D), 650V, 0.16ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247, Xi’an Lonten Renewable Energy Technology Inc IPI60R165CP vs LSB20N65F
IPI60R165CPAKSA1 Power Field-Effect Transistor, 21A I(D), 600V, 0.165ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA, GREEN, PLASTIC, TO-262, 3 PIN Infineon Technologies AG IPI60R165CP vs IPI60R165CPAKSA1
STFI28N60M2 N-channel 600 V, 0.135 Ohm typ., 22 A MDmesh M2 Power MOSFETs in I2PAKFP package STMicroelectronics IPI60R165CP vs STFI28N60M2
STI26NM60N 20A, 600V, 0.165ohm, N-CHANNEL, Si, POWER, MOSFET, TO-262AA, ROHS COMPLIANT, TO-262, I2PAK-3 STMicroelectronics IPI60R165CP vs STI26NM60N
STF28N60M2 N-channel 600 V, 0.135 Ohm typ., 22 A MDmesh M2 Power MOSFETs in TO-220FP package STMicroelectronics IPI60R165CP vs STF28N60M2
IPW60R165CPFKSA1 Power Field-Effect Transistor, 21A I(D), 600V, 0.165ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247, GREEN, PLASTIC PACKAGE-3 Infineon Technologies AG IPI60R165CP vs IPW60R165CPFKSA1
SSF26NS60 Power Field-Effect Transistor, 20A I(D), 600V, 0.165ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN Suzhou Good-Ark Electronics Co Ltd IPI60R165CP vs SSF26NS60
IPI60R165CPXKSA1 Power Field-Effect Transistor, 21A I(D), 600V, 0.165ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA, GREEN, PLASTIC, TO-262, 3 PIN Infineon Technologies AG IPI60R165CP vs IPI60R165CPXKSA1
LSB20N65 Power Field-Effect Transistor, 20A I(D), 650V, 0.15ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247, Xi’an Lonten Renewable Energy Technology Inc IPI60R165CP vs LSB20N65
LSC20N65 Power Field-Effect Transistor, 20A I(D), 650V, 0.15ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN Xi’an Lonten Renewable Energy Technology Inc IPI60R165CP vs LSC20N65

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