Part Details for IPP50R520CPXKSA1 by Infineon Technologies AG
Overview of IPP50R520CPXKSA1 by Infineon Technologies AG
- Distributor Offerings:
- Number of FFF Equivalents:
- CAD Models:
- Number of Functional Equivalents:
- Part Data Attributes
- Reference Designs:
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Price & Stock for IPP50R520CPXKSA1
Part # | Distributor | Description | Stock | Price | Buy | |
---|---|---|---|---|---|---|
|
Rochester Electronics | IPP50R520 - 500V CoolMOS N-Channel Power MOSFET RoHS: Compliant Status: Obsolete Min Qty: 1 | 9326 |
|
$0.6218 / $0.7315 | Buy Now |
DISTI #
IPP50R520CPXKSA1
|
TME | Transistor: N-MOSFET, unipolar, 500V, 7.1A, 66W, PG-TO220-3 Min Qty: 1 | 0 |
|
$0.9200 / $1.5300 | RFQ |
DISTI #
2728613
|
element14 Asia-Pacific | MOSFET, N-CH, 500V, 7.1A, TO-220 RoHS: Compliant Min Qty: 1 Container: Each | 0 |
|
$0.7473 / $1.6557 | Buy Now |
DISTI #
2728613
|
Farnell | MOSFET, N-CH, 500V, 7.1A, TO-220 RoHS: Compliant Min Qty: 1 Lead time: 53 Weeks, 1 Days Container: Each | 0 |
|
$0.5121 / $0.6182 | Buy Now |
|
Perfect Parts Corporation | 3360 |
|
RFQ |
Part Details for IPP50R520CPXKSA1
IPP50R520CPXKSA1 CAD Models
IPP50R520CPXKSA1 Part Data Attributes
|
IPP50R520CPXKSA1
Infineon Technologies AG
Buy Now
Datasheet
|
Compare Parts:
IPP50R520CPXKSA1
Infineon Technologies AG
Power Field-Effect Transistor, 7.1A I(D), 500V, 0.52ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, GREEN, PLASTIC, TO-220, 3 PIN
|
Pbfree Code | Yes | |
Rohs Code | Yes | |
Part Life Cycle Code | Obsolete | |
Ihs Manufacturer | INFINEON TECHNOLOGIES AG | |
Part Package Code | TO-220AB | |
Package Description | GREEN, PLASTIC, TO-220, 3 PIN | |
Pin Count | 3 | |
Reach Compliance Code | compliant | |
ECCN Code | EAR99 | |
Factory Lead Time | 4 Weeks | |
Samacsys Manufacturer | Infineon | |
Avalanche Energy Rating (Eas) | 166 mJ | |
Case Connection | ISOLATED | |
Configuration | SINGLE WITH BUILT-IN DIODE | |
DS Breakdown Voltage-Min | 500 V | |
Drain Current-Max (ID) | 7.1 A | |
Drain-source On Resistance-Max | 0.52 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
JEDEC-95 Code | TO-220AB | |
JESD-30 Code | R-PSFM-T3 | |
JESD-609 Code | e3 | |
Number of Elements | 1 | |
Number of Terminals | 3 | |
Operating Mode | ENHANCEMENT MODE | |
Operating Temperature-Max | 150 °C | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | FLANGE MOUNT | |
Polarity/Channel Type | N-CHANNEL | |
Pulsed Drain Current-Max (IDM) | 15 A | |
Qualification Status | Not Qualified | |
Surface Mount | NO | |
Terminal Finish | TIN | |
Terminal Form | THROUGH-HOLE | |
Terminal Position | SINGLE | |
Transistor Application | SWITCHING | |
Transistor Element Material | SILICON |