Datasheets
IPP530N15N3GXKSA1 by: Infineon Technologies AG

Power Field-Effect Transistor, 21A I(D), 150V, 0.053ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, GREEN, PLASTIC, TO-220, 3 PIN

Part Details for IPP530N15N3GXKSA1 by Infineon Technologies AG

Overview of IPP530N15N3GXKSA1 by Infineon Technologies AG

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Price & Stock for IPP530N15N3GXKSA1

Part # Distributor Description Stock Price Buy
DISTI # 47W3481
Newark Mosfet, N Channel, 150V, 21A, To220-3, Channel Type:N Channel, Drain Source Voltage Vds:150V, Continuous Drain Current Id:21A, Transistor Mounting:Through Hole, Rds(On) Test Voltage:10V, Gate Source Threshold Voltage Max:3V, Msl:- Rohs Compliant: Yes |Infineon IPP530N15N3GXKSA1 Min Qty: 1 Package Multiple: 1 Date Code: 0 Container: Bulk 0
Buy Now
DISTI # IPP530N15N3GXKSA1
TME Transistor: N-MOSFET, unipolar, 150V, 21A, 68W, PG-TO220-3 Min Qty: 1 0
  • 1 $1.9000
  • 3 $1.6200
  • 10 $1.3300
  • 50 $1.1400
$1.1400 / $1.9000 RFQ
DISTI # 2212902
element14 Asia-Pacific MOSFET, N-CH, 150V, 21A, TO220-3 RoHS: Compliant Min Qty: 1 Container: Each 0
  • 1 $2.6128
  • 10 $2.3339
  • 100 $1.8716
  • 500 $1.5413
$1.5413 / $2.6128 Buy Now
DISTI # 2212902
Farnell MOSFET, N-CH, 150V, 21A, TO220-3 RoHS: Compliant Min Qty: 1 Lead time: 45 Weeks, 1 Days Container: Each 0
  • 1 $2.6100
  • 10 $2.3353
  • 100 $1.8732
  • 500 $1.5360
$1.5360 / $2.6100 Buy Now

Part Details for IPP530N15N3GXKSA1

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IPP530N15N3GXKSA1 Part Data Attributes

IPP530N15N3GXKSA1 Infineon Technologies AG
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IPP530N15N3GXKSA1 Infineon Technologies AG Power Field-Effect Transistor, 21A I(D), 150V, 0.053ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, GREEN, PLASTIC, TO-220, 3 PIN
Pbfree Code Yes
Rohs Code Yes
Part Life Cycle Code Obsolete
Ihs Manufacturer INFINEON TECHNOLOGIES AG
Part Package Code TO-220AB
Package Description FLANGE MOUNT, R-PSFM-T3
Pin Count 3
Reach Compliance Code compliant
ECCN Code EAR99
Factory Lead Time 52 Weeks
Samacsys Manufacturer Infineon
Avalanche Energy Rating (Eas) 60 mJ
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 150 V
Drain Current-Max (ID) 21 A
Drain-source On Resistance-Max 0.053 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code TO-220AB
JESD-30 Code R-PSFM-T3
JESD-609 Code e3
Number of Elements 1
Number of Terminals 3
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 175 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style FLANGE MOUNT
Peak Reflow Temperature (Cel) NOT SPECIFIED
Polarity/Channel Type N-CHANNEL
Pulsed Drain Current-Max (IDM) 84 A
Qualification Status Not Qualified
Surface Mount NO
Terminal Finish Tin (Sn)
Terminal Form THROUGH-HOLE
Terminal Position SINGLE
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Transistor Application SWITCHING
Transistor Element Material SILICON

Alternate Parts for IPP530N15N3GXKSA1

This table gives cross-reference parts and alternative options found for IPP530N15N3GXKSA1. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IPP530N15N3GXKSA1, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
IPI530N15N3GXKSA1 Power Field-Effect Transistor, 21A I(D), 150V, 0.053ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA, GREEN, PLASTIC, TO-262, 3 PIN Infineon Technologies AG IPP530N15N3GXKSA1 vs IPI530N15N3GXKSA1

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