Part Details for IPP530N15N3GXKSA1 by Infineon Technologies AG
Overview of IPP530N15N3GXKSA1 by Infineon Technologies AG
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- Number of FFF Equivalents:
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- Number of Functional Equivalents:
- Part Data Attributes
- Reference Designs:
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Price & Stock for IPP530N15N3GXKSA1
Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
47W3481
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Newark | Mosfet, N Channel, 150V, 21A, To220-3, Channel Type:N Channel, Drain Source Voltage Vds:150V, Continuous Drain Current Id:21A, Transistor Mounting:Through Hole, Rds(On) Test Voltage:10V, Gate Source Threshold Voltage Max:3V, Msl:- Rohs Compliant: Yes |Infineon IPP530N15N3GXKSA1 Min Qty: 1 Package Multiple: 1 Date Code: 0 Container: Bulk | 0 |
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Buy Now | |
DISTI #
IPP530N15N3GXKSA1
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TME | Transistor: N-MOSFET, unipolar, 150V, 21A, 68W, PG-TO220-3 Min Qty: 1 | 0 |
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$1.1400 / $1.9000 | RFQ |
DISTI #
2212902
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element14 Asia-Pacific | MOSFET, N-CH, 150V, 21A, TO220-3 RoHS: Compliant Min Qty: 1 Container: Each | 0 |
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$1.5413 / $2.6128 | Buy Now |
DISTI #
2212902
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Farnell | MOSFET, N-CH, 150V, 21A, TO220-3 RoHS: Compliant Min Qty: 1 Lead time: 45 Weeks, 1 Days Container: Each | 0 |
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$1.5360 / $2.6100 | Buy Now |
Part Details for IPP530N15N3GXKSA1
IPP530N15N3GXKSA1 CAD Models
IPP530N15N3GXKSA1 Part Data Attributes
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IPP530N15N3GXKSA1
Infineon Technologies AG
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Datasheet
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IPP530N15N3GXKSA1
Infineon Technologies AG
Power Field-Effect Transistor, 21A I(D), 150V, 0.053ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, GREEN, PLASTIC, TO-220, 3 PIN
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Pbfree Code | Yes | |
Rohs Code | Yes | |
Part Life Cycle Code | Obsolete | |
Ihs Manufacturer | INFINEON TECHNOLOGIES AG | |
Part Package Code | TO-220AB | |
Package Description | FLANGE MOUNT, R-PSFM-T3 | |
Pin Count | 3 | |
Reach Compliance Code | compliant | |
ECCN Code | EAR99 | |
Factory Lead Time | 52 Weeks | |
Samacsys Manufacturer | Infineon | |
Avalanche Energy Rating (Eas) | 60 mJ | |
Configuration | SINGLE WITH BUILT-IN DIODE | |
DS Breakdown Voltage-Min | 150 V | |
Drain Current-Max (ID) | 21 A | |
Drain-source On Resistance-Max | 0.053 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
JEDEC-95 Code | TO-220AB | |
JESD-30 Code | R-PSFM-T3 | |
JESD-609 Code | e3 | |
Number of Elements | 1 | |
Number of Terminals | 3 | |
Operating Mode | ENHANCEMENT MODE | |
Operating Temperature-Max | 175 °C | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | FLANGE MOUNT | |
Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
Polarity/Channel Type | N-CHANNEL | |
Pulsed Drain Current-Max (IDM) | 84 A | |
Qualification Status | Not Qualified | |
Surface Mount | NO | |
Terminal Finish | Tin (Sn) | |
Terminal Form | THROUGH-HOLE | |
Terminal Position | SINGLE | |
Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
Transistor Application | SWITCHING | |
Transistor Element Material | SILICON |
Alternate Parts for IPP530N15N3GXKSA1
This table gives cross-reference parts and alternative options found for IPP530N15N3GXKSA1. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IPP530N15N3GXKSA1, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number | Description | Manufacturer | Compare |
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IPI530N15N3GXKSA1 | Power Field-Effect Transistor, 21A I(D), 150V, 0.053ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA, GREEN, PLASTIC, TO-262, 3 PIN | Infineon Technologies AG | IPP530N15N3GXKSA1 vs IPI530N15N3GXKSA1 |