Part Details for IPP60R950C6XKSA1 by Infineon Technologies AG
Overview of IPP60R950C6XKSA1 by Infineon Technologies AG
- Distributor Offerings: (2 listings)
- Number of FFF Equivalents: (0 crosses)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (6 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Price & Stock for IPP60R950C6XKSA1
Part # | Distributor | Description | Stock | Price | Buy | |
---|---|---|---|---|---|---|
|
Rochester Electronics | IPP60R950 - 600V CoolMOS N-Channel Power MOSFET ' RoHS: Compliant Status: Obsolete Min Qty: 1 | 74750 |
|
$0.3868 / $0.4550 | Buy Now |
DISTI #
SP000629364
|
EBV Elektronik | CoolMOS C6 Power Transistor N-Channel 650V 4.4A (Alt: SP000629364) RoHS: Compliant Min Qty: 500 Package Multiple: 500 Lead time: 21 Weeks, 0 Days | EBV - 0 |
|
Buy Now |
Part Details for IPP60R950C6XKSA1
IPP60R950C6XKSA1 CAD Models
IPP60R950C6XKSA1 Part Data Attributes
|
IPP60R950C6XKSA1
Infineon Technologies AG
Buy Now
Datasheet
|
Compare Parts:
IPP60R950C6XKSA1
Infineon Technologies AG
Power Field-Effect Transistor, 4.4A I(D), 600V, 0.95ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, GREEN, PLASTIC, TO-220, 3 PIN
|
Pbfree Code | Yes | |
Rohs Code | Yes | |
Part Life Cycle Code | Obsolete | |
Ihs Manufacturer | INFINEON TECHNOLOGIES AG | |
Part Package Code | TO-220AB | |
Package Description | GREEN, PLASTIC, TO-220, 3 PIN | |
Pin Count | 3 | |
Reach Compliance Code | compliant | |
ECCN Code | EAR99 | |
Samacsys Manufacturer | Infineon | |
Avalanche Energy Rating (Eas) | 46 mJ | |
Configuration | SINGLE WITH BUILT-IN DIODE | |
DS Breakdown Voltage-Min | 600 V | |
Drain Current-Max (ID) | 4.4 A | |
Drain-source On Resistance-Max | 0.95 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
JEDEC-95 Code | TO-220AB | |
JESD-30 Code | R-PSFM-T3 | |
JESD-609 Code | e3 | |
Number of Elements | 1 | |
Number of Terminals | 3 | |
Operating Mode | ENHANCEMENT MODE | |
Operating Temperature-Max | 150 °C | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | FLANGE MOUNT | |
Polarity/Channel Type | N-CHANNEL | |
Pulsed Drain Current-Max (IDM) | 12 A | |
Qualification Status | Not Qualified | |
Surface Mount | NO | |
Terminal Finish | TIN | |
Terminal Form | THROUGH-HOLE | |
Terminal Position | SINGLE | |
Transistor Application | SWITCHING | |
Transistor Element Material | SILICON |
Alternate Parts for IPP60R950C6XKSA1
This table gives cross-reference parts and alternative options found for IPP60R950C6XKSA1. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IPP60R950C6XKSA1, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number | Description | Manufacturer | Compare |
---|---|---|---|
LSC04N65 | Power Field-Effect Transistor, 4A I(D), 650V, 0.96ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN | Xi’an Lonten Renewable Energy Technology Inc | IPP60R950C6XKSA1 vs LSC04N65 |
AOT4S60L | Power Field-Effect Transistor, 4A I(D), 600V, 0.9ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, HALOGEN FREE AND ROHS COMPLIANT, TO-220, 3 PIN | Alpha & Omega Semiconductor | IPP60R950C6XKSA1 vs AOT4S60L |
AOU4S60 | Power Field-Effect Transistor, 4A I(D), 600V, 0.9ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251, GREEN PACKAGE-3 | Alpha & Omega Semiconductor | IPP60R950C6XKSA1 vs AOU4S60 |
LSG04N70 | Power Field-Effect Transistor, 4A I(D), 700V, 0.96ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, | Xi’an Lonten Renewable Energy Technology Inc | IPP60R950C6XKSA1 vs LSG04N70 |
LSH04N70 | Power Field-Effect Transistor, 4A I(D), 700V, 0.96ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251, | Xi’an Lonten Renewable Energy Technology Inc | IPP60R950C6XKSA1 vs LSH04N70 |
AOT4S60 | Power Field-Effect Transistor, 4A I(D), 600V, 0.9ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, ROHS COMPLIANT, TO-220, 3 PIN | Alpha & Omega Semiconductor | IPP60R950C6XKSA1 vs AOT4S60 |