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Part Details for IPS70R2K0CEAKMA1 by Infineon Technologies AG
Overview of IPS70R2K0CEAKMA1 by Infineon Technologies AG
- Distributor Offerings: (2 listings)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Available)
- Number of Functional Equivalents: (0 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Applications
Consumer Electronics
Energy and Power Systems
Renewable Energy
Price & Stock for IPS70R2K0CEAKMA1
| Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
IPS70R2K0CEAKMA1
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Avnet Americas | Trans MOSFET N 750V 4A 3-Pin TO-251 Tube - Rail/Tube (Alt: IPS70R2K0CEAKMA1) RoHS: Compliant Min Qty: 1320 Package Multiple: 1 Lead time: 4 Weeks, 0 Days Container: Tube | 1598 Partner Stock |
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$0.2349 / $0.2764 | Buy Now |
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Rochester Electronics | CONSUMER ' RoHS: Compliant Status: Obsolete Min Qty: 1 | 1500 |
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$0.2349 / $0.2764 | Buy Now |
Part Details for IPS70R2K0CEAKMA1
IPS70R2K0CEAKMA1 CAD Models
IPS70R2K0CEAKMA1 Part Data Attributes
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IPS70R2K0CEAKMA1
Infineon Technologies AG
Buy Now
Datasheet
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Compare Parts:
IPS70R2K0CEAKMA1
Infineon Technologies AG
Power Field-Effect Transistor, 700V, 2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251, IPAK-3
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| Pbfree Code | Yes | |
| Rohs Code | Yes | |
| Part Life Cycle Code | Obsolete | |
| Ihs Manufacturer | INFINEON TECHNOLOGIES AG | |
| Package Description | IPAK-3 | |
| Reach Compliance Code | not_compliant | |
| ECCN Code | EAR99 | |
| Factory Lead Time | 4 Weeks | |
| Samacsys Manufacturer | Infineon | |
| Avalanche Energy Rating (Eas) | 11 mJ | |
| Case Connection | DRAIN | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 700 V | |
| Drain-source On Resistance-Max | 2 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JEDEC-95 Code | TO-251 | |
| JESD-30 Code | R-PSIP-T3 | |
| JESD-609 Code | e3 | |
| Number of Elements | 1 | |
| Number of Terminals | 3 | |
| Operating Mode | ENHANCEMENT MODE | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | IN-LINE | |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
| Polarity/Channel Type | N-CHANNEL | |
| Pulsed Drain Current-Max (IDM) | 6.3 A | |
| Surface Mount | NO | |
| Terminal Finish | Tin (Sn) | |
| Terminal Form | THROUGH-HOLE | |
| Terminal Position | SINGLE | |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |