Transistors Power Field-Effect Transistors IPW60R041P6

IPW60R041P6 by
Infineon Technologies AG

Description: Power Field-Effect Transistor, 600V, 0.041ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247, GREEN, PLASTIC PACKAGE-3

Overview of IPW60R041P6 by Infineon Technologies AG

Note: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.

Where used in Applications: Energy and Power Systems Medical Imaging Robotics and Drones

Part #	Manufacturer	Description	Stock	Price	Buy
IPW60R041P6 DISTI # 726-IPW60R041P6	Mouser Electronics	MOSFETs HIGH POWER PRICE/PERFORM RoHS: Compliant	215	1 $11.8200 10 $10.4200 25 $10.1300 50 $9.5700 100 $9.0100 240 $8.7200 480 $8.1600	$8.1600 / $11.8200	Buy Now
IPW60R041P6 DISTI # 83597548	Verical	Trans MOSFET N-CH 600V 77.5A 3-Pin(3+Tab) TO-247 Tube RoHS: Compliant Min Qty: 6 Package Multiple: 1 Date Code: 2401	Americas - 240	6 $12.8534 25 $12.2600 50 $11.7666 100 $11.3518	$11.3518 / $12.8534	Buy Now
IPW60R041P6	Quest Components	POWER FIELD-EFFECT TRANSISTOR, 600V, 0.041OHM, 1-ELEMENT, N-CHANNEL, SILICON, METAL-OXIDE SEMICONDUCTOR FET, TO-247	192	1 $18.9428 65 $14.7333 137 $13.4704	$13.4704 / $18.9428	Buy Now
IPW60R041P6	Quest Components	POWER FIELD-EFFECT TRANSISTOR, 600V, 0.041OHM, 1-ELEMENT, N-CHANNEL, SILICON, METAL-OXIDE SEMICONDUCTOR FET, TO-247	28	1 $12.8850 5 $9.6638 27 $8.3753	$8.3753 / $12.8850	Buy Now
IPW60R041P6	LCSC	TO-247-3 MOSFETs ROHS	5	1 $11.5587 10 $11.1881	$11.1881 / $11.5587	Buy Now
IPW60R041P6	Win Source Electronics	Very high commutation ruggedness	4000	2 $28.2610 5 $23.1890 7 $22.4640 10 $21.7400 12 $21.0150 16 $18.8410	$18.8410 / $28.2610	Buy Now

25 Available Download Formats

By downloading CAD models, you agree to our Terms & Conditions and Privacy Policy

Show differences only	IPW60R041P6 Infineon Technologies AG Buy Now	part-to-be-compared Infineon Technologies AG Buy Now
-	-	-
Rohs Code	Yes
Part Life Cycle Code	Active
Ihs Manufacturer	INFINEON TECHNOLOGIES AG
Package Description	GREEN, PLASTIC PACKAGE-3
Reach Compliance Code	compliant
ECCN Code	EAR99
Samacsys Manufacturer	Infineon
Avalanche Energy Rating (Eas)	1954 mJ
Configuration	SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min	600 V
Drain-source On Resistance-Max	0.041 Ω
FET Technology	METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code	TO-247
JESD-30 Code	R-PSFM-T3
JESD-609 Code	e3
Number of Elements	1
Number of Terminals	3
Operating Mode	ENHANCEMENT MODE
Package Body Material	PLASTIC/EPOXY
Package Shape	RECTANGULAR
Package Style	FLANGE MOUNT
Peak Reflow Temperature (Cel)	NOT SPECIFIED
Polarity/Channel Type	N-CHANNEL
Pulsed Drain Current-Max (IDM)	267 A
Surface Mount	NO
Terminal Finish	Tin (Sn)
Terminal Form	THROUGH-HOLE
Terminal Position	SINGLE
Time@Peak Reflow Temperature-Max (s)	NOT SPECIFIED
Transistor Application	SWITCHING
Transistor Element Material	SILICON

Want to compare parts?