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Transistors Power Field-Effect Transistors IPW60R041P6FKSA1

Transistors
IPW60R041P6FKSA1
Infineon Technologies AG
Description: Power Field-Effect Transistor, 600V, 0.041ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247, GREEN, PLASTIC PACKAGE-3

Overview of IPW60R041P6FKSA1 by Infineon Technologies AG

Note: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
  • Distributor Offerings: ( 14 listings )
  • Number of FFF Equivalents: ( 0 replacements )
  • CAD Models: ( Request Part )
  • Number of Functional Equivalents: ( 0 options )
  • Part Data Attributes ( Available )
  • Reference Designs: ( Not Available )
Where used in Applications: Energy and Power Systems Medical Imaging Robotics and Drones

Price & Stock for IPW60R041P6FKSA1 by Infineon Technologies AG

Part # Manufacturer Description Stock Price Buy
DISTI # 12AC9733
Newark Mosfet, N-Ch, 600V, 77.5A, 150Deg C/481W, Channel Type:N Channel, Drain Source Voltage Vds:600V, Continuous Drain Current Id:77.5A, Transistor Mounting:Through Hole, Rds(On) Test Voltage:10V, Gate Source Threshold Voltage Max:4V Rohs Compliant: Yes |Infineon IPW60R041P6FKSA1 RoHS: Compliant Min Qty: 1 Package Multiple: 1 Date Code: 0 Container: Bulk 770
  • 1 $13.6600
  • 10 $12.9200
  • 25 $11.2800
  • 60 $11.2600
  • 120 $10.7300
  • 270 $10.5600
  • 510 $9.1400
$9.1400 / $13.6600 Buy Now
DISTI # 448-IPW60R041P6FKSA1-ND
DigiKey MOSFET N-CH 600V 77.5A TO247-3 Min Qty: 1 Lead time: 15 Weeks Container: Tube 228
In Stock
  • 1 $13.2900
  • 30 $8.0773
  • 120 $6.9715
$6.9715 / $13.2900 Buy Now
DISTI # IPW60R041P6FKSA1
Avnet Americas Trans MOSFET N-CH 650V 77.5A 3-Pin TO-247 Tube - Rail/Tube (Alt: IPW60R041P6FKSA1) RoHS: Compliant Min Qty: 240 Package Multiple: 30 Lead time: 15 Weeks, 0 Days Container: Tube 640
RFQ
DISTI # 12AC9733
Avnet Americas Trans MOSFET N-CH 650V 77.5A 3-Pin TO-247 Tube - Bulk (Alt: 12AC9733) RoHS: Not Compliant Min Qty: 1 Package Multiple: 1 Lead time: 16 Weeks, 5 Days Container: Bulk 17 Partner Stock
  • 1 $13.6600
  • 10 $12.9200
  • 25 $11.2800
  • 60 $11.2600
  • 120 $10.7300
$10.7300 / $13.6600 Buy Now
DISTI # 726-IPW60R041P6FKSA1
Mouser Electronics MOSFETs HIGH POWER PRICE/PERFORM RoHS: Compliant 443
  • 1 $13.0200
  • 10 $9.4100
  • 100 $7.1400
  • 240 $7.1300
  • 480 $6.9700
$6.9700 / $13.0200 Buy Now
Future Electronics IPW60R041P6 Series 600 V 77.5 A CoolMOS™ P6 Power Transistor - TO-247-3 RoHS: Compliant pbFree: Yes Min Qty: 240 Package Multiple: 240 Lead time: 15 Weeks Container: Tube 240
Tube
  • 30 $6.6800
  • 480 $6.6200
$6.6200 / $6.6800 Buy Now
Future Electronics IPW60R041P6 Series 600 V 77.5 A CoolMOS™ P6 Power Transistor - TO-247-3 RoHS: Compliant pbFree: Yes Min Qty: 240 Package Multiple: 30 Lead time: 15 Weeks Container: Tube 0
Tube
  • 30 $6.6800
  • 480 $6.6200
$6.6200 / $6.6800 Buy Now
DISTI # 80576758
Verical Trans MOSFET N-CH 600V 77.5A 3-Pin(3+Tab) TO-247 Tube RoHS: Compliant Min Qty: 1 Package Multiple: 1 Date Code: 2418 Americas - 240
  • 1 $10.7369
  • 10 $8.7990
  • 25 $8.7785
  • 100 $6.9869
  • 240 $6.9798
  • 480 $6.8467
$6.8467 / $10.7369 Buy Now
DISTI # IPW60R041P6FKSA1
TME Transistor: N-MOSFET, unipolar, 600V, 77.5A, 481W, PG-TO247-3 Min Qty: 1 0
  • 1 $20.3200
  • 3 $18.3100
  • 10 $16.3000
  • 30 $14.0700
$14.0700 / $20.3200 RFQ
DISTI # C1S322000457094
Chip1Stop MOSFET RoHS: Compliant pbFree: Yes 240
  • 1 $14.6000
  • 10 $11.1000
  • 25 $8.0500
  • 50 $8.0300
  • 100 $7.2100
$7.2100 / $14.6000 Buy Now
DISTI # C1S322000401846
Chip1Stop MOSFET RoHS: Compliant pbFree: Yes 70
  • 1 $23.6000
$23.6000 Buy Now
DISTI # SP001091630
EBV Elektronik Trans MOSFET N-CH 650V 77.5A 3-Pin TO-247 Tube (Alt: SP001091630) RoHS: Compliant Min Qty: 240 Package Multiple: 240 Lead time: 16 Weeks, 0 Days EBV - 0
Buy Now
New Advantage Corporation IPW60R041P6 Series 600 V 77.5 A CoolMOS� P6 Power Transistor - TO-247-3 RoHS: Compliant Min Qty: 1 Package Multiple: 30 180
  • 30 $9.4600
  • 180 $8.8300
$8.8300 / $9.4600 Buy Now
Win Source Electronics MOSFET N-CH 600V 77.5A TO247-3 / N-Channel 600 V 77.5A (Tc) 481W (Tc) Through Hole PG-TO247-3 4800
  • 2 $28.2610
  • 5 $23.1890
  • 7 $22.4640
  • 10 $21.7400
  • 12 $21.0150
  • 16 $18.8410
$18.8410 / $28.2610 Buy Now

CAD Models for IPW60R041P6FKSA1 by Infineon Technologies AG
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Part Data Attributes for IPW60R041P6FKSA1 by Infineon Technologies AG
Parametric Data

IPW60R041P6FKSA1
Infineon Technologies AG
Buy Now
-
-
Pbfree Code
Yes
Rohs Code
Yes
Part Life Cycle Code
Active
Ihs Manufacturer
INFINEON TECHNOLOGIES AG
Package Description
FLANGE MOUNT, R-PSFM-T3
Reach Compliance Code
compliant
ECCN Code
EAR99
Factory Lead Time
16 Weeks, 5 Days
Samacsys Manufacturer
Infineon
Avalanche Energy Rating (Eas)
1954 mJ
Configuration
SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min
600 V
Drain-source On Resistance-Max
0.041 Ω
FET Technology
METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code
TO-247
JESD-30 Code
R-PSFM-T3
JESD-609 Code
e3
Number of Elements
1
Number of Terminals
3
Operating Mode
ENHANCEMENT MODE
Package Body Material
PLASTIC/EPOXY
Package Shape
RECTANGULAR
Package Style
FLANGE MOUNT
Peak Reflow Temperature (Cel)
NOT SPECIFIED
Polarity/Channel Type
N-CHANNEL
Pulsed Drain Current-Max (IDM)
267 A
Surface Mount
NO
Terminal Finish
Tin (Sn)
Terminal Form
THROUGH-HOLE
Terminal Position
SINGLE
Time@Peak Reflow Temperature-Max (s)
NOT SPECIFIED
Transistor Application
SWITCHING
Transistor Element Material
SILICON
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  1. IPW60R041P6FKSA1
    Infineon Technologies AG
    Power Field-Effect Transistor, 600V, 0.041ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247, GREEN, PLASTIC PACKAGE-3
    VS

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