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Part Details for IPW65R080CFDAFKSA1 by Infineon Technologies AG
Results Overview of IPW65R080CFDAFKSA1 by Infineon Technologies AG
- Distributor Offerings: (9 listings)
- Number of FFF Equivalents: (1 replacement)
- Tariff Estimator: (Not Available)
- Number of Functional Equivalents: (10 options)
- CAD Models: (Available)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Applications
Energy and Power Systems
Renewable Energy
IPW65R080CFDAFKSA1 Information
IPW65R080CFDAFKSA1 by Infineon Technologies AG is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Price & Stock for IPW65R080CFDAFKSA1
| Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
IPW65R080CFDAFKSA1
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Avnet Americas | - Rail/Tube (Alt: IPW65R080CFDAFKSA1) COO: Germany RoHS: Compliant Min Qty: 240 Package Multiple: 240 Lead time: 15 Weeks, 0 Days Container: Tube | 0 |
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$3.8853 / $4.4819 | Buy Now |
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Bristol Electronics | 546 |
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RFQ | ||
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Rochester Electronics | Power Field-Effect Transistor, 43.3A I(D), 650V, 0.08ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247 RoHS: Compliant Status: Active Min Qty: 1 | 7 |
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$3.0600 / $3.8300 | Buy Now |
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DISTI #
TMOS1734
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Rutronik | N-CH 650V 43,3A 80mOhm TO247 RoHS: Compliant Min Qty: 30 Package Multiple: 30 Container: Tube |
Stock DE - 2280 Stock HK - 0 Stock US - 0 Stock SG - 0 |
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$3.3800 | Buy Now |
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DISTI #
IPW65R080CFDAFKSA1
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Chip One Stop | Semiconductors RoHS: Compliant pbFree: Yes Min Qty: 1 Lead time: 0 Weeks, 1 Days Container: Tube | 720 |
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$5.2200 / $7.5600 | Buy Now |
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Chip Stock | SingleN-Channel650V80mOhm161nCCoolMOS™PowerMosfet-TO-247-3 | 43500 |
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RFQ | |
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DISTI #
SP000875806
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EBV Elektronik | Power MOSFET AECQ101 N Channel 650 V 433 A 0072 ohm TO247 Through Hole (Alt: SP000875806) RoHS: Compliant Min Qty: 240 Package Multiple: 240 Lead time: 16 Weeks, 0 Days | EBV - 0 |
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Buy Now | |
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New Advantage Corporation | Single N-Channel 650 V 80 mOhm 161 nC CoolMOS� Power Mosfet - TO-247-3 RoHS: Compliant Min Qty: 1 Package Multiple: 240 | 480 |
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$7.7600 / $8.4100 | Buy Now |
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Win Source Electronics | MOSFET N-CH 700V 43.3A TO247 / Trans MOSFET N-CH 650V 43.3A Automotive 3-Pin(3+Tab) TO-247 Tube | 20000 |
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$3.8458 / $5.7687 | Buy Now |
Part Details for IPW65R080CFDAFKSA1
IPW65R080CFDAFKSA1 CAD Models
IPW65R080CFDAFKSA1 Part Data Attributes
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IPW65R080CFDAFKSA1
Infineon Technologies AG
Buy Now
Datasheet
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Compare Parts:
IPW65R080CFDAFKSA1
Infineon Technologies AG
Power Field-Effect Transistor, 43.3A I(D), 650V, 0.08ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247, GREEN, PLASTIC PACKAGE-3
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| Pbfree Code | Yes | |
| Rohs Code | Yes | |
| Part Life Cycle Code | Active | |
| Part Package Code | TO-247 | |
| Package Description | Green, Plastic Package-3 | |
| Pin Count | 3 | |
| Reach Compliance Code | Compliant | |
| ECCN Code | EAR99 | |
| Factory Lead Time | 15 Weeks | |
| Additional Feature | High Reliability | |
| Avalanche Energy Rating (Eas) | 1160 Mj | |
| Configuration | Single With Built-In Diode | |
| DS Breakdown Voltage-Min | 650 V | |
| Drain Current-Max (ID) | 43.3 A | |
| Drain-source On Resistance-Max | 0.08 Ω | |
| FET Technology | Metal-Oxide Semiconductor | |
| JEDEC-95 Code | TO-247 | |
| JESD-30 Code | R-PSFM-T3 | |
| JESD-609 Code | e3 | |
| Number of Elements | 1 | |
| Number of Terminals | 3 | |
| Operating Mode | Enhancement Mode | |
| Package Body Material | Plastic/Epoxy | |
| Package Shape | Rectangular | |
| Package Style | Flange Mount | |
| Polarity/Channel Type | N-Channel | |
| Pulsed Drain Current-Max (IDM) | 137 A | |
| Reference Standard | Aec-Q101 | |
| Surface Mount | No | |
| Terminal Finish | Tin (Sn) | |
| Terminal Form | Through-Hole | |
| Terminal Position | Single | |
| Transistor Application | Switching | |
| Transistor Element Material | Silicon |
Alternate Parts for IPW65R080CFDAFKSA1
This table gives cross-reference parts and alternative options found for IPW65R080CFDAFKSA1. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IPW65R080CFDAFKSA1, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Manufacturer | Composite Price | Description | Compare |
|---|---|---|---|---|
| IPW65R080CFDA | Infineon Technologies AG | $10.2444 | Power Field-Effect Transistor, 43.3A I(D), 650V, 0.08ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247, GREEN, PLASTIC PACKAGE-3 | IPW65R080CFDAFKSA1 vs IPW65R080CFDA |
IPW65R080CFDAFKSA1 Frequently Asked Questions (FAQ)
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The maximum operating temperature range for IPW65R080CFDAFKSA1 is -40°C to 150°C.
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Proper cooling can be achieved by using a heat sink with a thermal resistance of ≤ 1.5 K/W, and ensuring good airflow around the device.
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The recommended gate resistor value for IPW65R080CFDAFKSA1 is between 10 Ω and 100 Ω, depending on the specific application and switching frequency.
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Yes, IPW65R080CFDAFKSA1 is qualified according to AEC-Q101, making it suitable for high-reliability applications such as automotive systems.
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Use a voltage regulator or a voltage supervisor to ensure the device operates within the recommended voltage range of 12 V to 24 V.