Datasheets
IRF1010-015PBF by:

75A, 55V, 0.014ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB

Part Details for IRF1010-015PBF by Infineon Technologies AG

Overview of IRF1010-015PBF by Infineon Technologies AG

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Applications Industrial Automation

Part Details for IRF1010-015PBF

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IRF1010-015PBF Part Data Attributes

IRF1010-015PBF Infineon Technologies AG
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IRF1010-015PBF Infineon Technologies AG 75A, 55V, 0.014ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
Rohs Code Yes
Part Life Cycle Code Obsolete
Ihs Manufacturer INFINEON TECHNOLOGIES AG
Package Description FLANGE MOUNT, R-PSFM-T3
Reach Compliance Code compliant
ECCN Code EAR99
Avalanche Energy Rating (Eas) 700 mJ
Case Connection DRAIN
Configuration SINGLE
DS Breakdown Voltage-Min 55 V
Drain Current-Max (ID) 75 A
Drain-source On Resistance-Max 0.014 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code TO-220AB
JESD-30 Code R-PSFM-T3
JESD-609 Code e3
Number of Elements 1
Number of Terminals 3
Operating Mode ENHANCEMENT MODE
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style FLANGE MOUNT
Polarity/Channel Type N-CHANNEL
Pulsed Drain Current-Max (IDM) 300 A
Qualification Status Not Qualified
Surface Mount NO
Terminal Finish MATTE TIN OVER NICKEL
Terminal Form THROUGH-HOLE
Terminal Position SINGLE
Transistor Application SWITCHING
Transistor Element Material SILICON

Alternate Parts for IRF1010-015PBF

This table gives cross-reference parts and alternative options found for IRF1010-015PBF. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IRF1010-015PBF, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
IRF1010-015 Power Field-Effect Transistor, 75A I(D), 55V, 0.014ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB International Rectifier IRF1010-015PBF vs IRF1010-015
IRF1010-015PBF Power Field-Effect Transistor, 75A I(D), 55V, 0.014ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB International Rectifier IRF1010-015PBF vs IRF1010-015PBF
Part Number Description Manufacturer Compare
IRF1010-015PBF Power Field-Effect Transistor, 75A I(D), 55V, 0.014ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB International Rectifier IRF1010-015PBF vs IRF1010-015PBF
IRF1010-015 Power Field-Effect Transistor, 75A I(D), 55V, 0.014ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB International Rectifier IRF1010-015PBF vs IRF1010-015

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